66139-XXX 4N50 Mii OPTICALLY COUPLED ISOLATOR OPTOELECTRONIC PRODUCTS DIVISION Features: Applications: • • • • • • • • • High Isolation High Transfer Ratio High Voltage Output Low Dissipation Isolated case Power supplies Transmitters Digital circuits Feedback isolation DESCRIPTION The 4N50 optically coupled isolator consists of a gallium arsenide LED photon-coupled to a silicon photodiode detector and a high gain NPN transistor with base access. The low profile, hermetically sealed package measures .370” square by .225” high with pinout on .100” centers for ease of PC board layout. This device available in standard or screened to MIL-PRF19500 versions. ABSOLUTE MAXIMUM RATINGS Isolation Voltage (Input to output-case)....................................................................................................................1,500 VRMS Collector-Emitter Voltage (Base open).................................................................................................................................. 40 V Collector-Base Voltage .......................................................................................................................................................... 40 V Emitter-Base Voltage............................................................................................................................................................... 4 V Input diode reverse voltage ..................................................................................................................................................... 3 V Input diode continuous forward Current @ 65°C ambient ..................................................................................... 40mA (note1) Continuous collector current ..............................................................................................................................................50 mA Continuous transistor power dissipation @ 25°C............................................................................................... 300mW (note 2) Operating temperature range .............................................................................................................................-55°C to +110°C Storage temperature range ................................................................................................................................-55°C to +125°C Lead Soldering Temperature (10 seconds max., 1/16 in below seating plan) .................................................................. 260°C Peak input diode current............................................................................................................................................ 1 A (note 3) Notes: 1. Derate linearly to 110°C ambient at the rate of 0.88 mA/°C. 2. Derate linearly to 110°C ambient at the rate of 3.5 mW/°C. 3. This value applies to Tw < 1 µs, Prr < 300 PPS. Package Dimensions Schematic Diagram +.002 -.001 5 LEADS 0.018 [0.46] 0.335 [8.51] SQ. MAX 7 5 0.750 [19.05] 0.275 [6.99] MAX. 4 0.031 [0.79]±.002 [0.05] 0.032 [0.81] 7 3 0.370 [9.40] SQ. MAX 0.100 [2.54] TYP Ø0.080 [Ø2.03] GLASS BEAD 5 PLACES 1 1 5 4 3 0.100 [2.54] TYP BOTTOM VIEW MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: [email protected] 9-6 66139-XXX 4N50 OPTICALLY COUPLED ISOLATOR OPTICAL/ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted. SYMBOL MIN UNITS TEST CONDITIONS Collector-Base Breakdown Voltage PARAMETER V(BR)CBO 40 V IC = 100µA, IE = 0, IF = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 V IC = 1 mA, IB = 0, IF = 0 Emitter-Base Breakdown Voltage V(BR)EBO 4 V IE = 100µA, IC = 0, IF = 0 µA VR = 3V Input Diode Static Reverse Current On-State Collector Current On-State Collector Current - IR +25°C -55°C MAX 100 IC(ON) 1 mA VCE = 1V, IB = 0, IF = 2 mA IC(ON) 13 mA VCE = 1V, IB = 0, IF = 10 mA IC(ON) 14 mA VCE = 5V, IB = 0, IF = 10mA IC(ON) 8.5 mA VCE = V, IB = 0, IF = 10 mA IC(ON) 9 mA VCE = 5V, IB = 0, IF = 10 mA Off-State Collector Current - +25°C IC(OFF) 100 nA VCE = 20V, IB = 0, IF = 0 Off-State Collector Current - +100°C IC(OFF) 150 µA VCE = 20V, IB = 0, IF = 0 +25°C VF .8 1.3 V IF = 10 mA -55°C VF 1 1.5 V IF =10 mA +100°C VF .7 1.2 V IF =10 mA +25°C VCE(sat) .3 V IC = 10mA, IB = 0, IF = 10mA -55°C VCE(sat) .3 V Input Diode Static Forward Voltage Collector-Emitter Saturation Voltage Input-to-output Isolation Res. R10 Input -to-output Capacitance C10 9 10 Ω Pin 1 & 7 and 3,4 & 5 shorted pF Pin 1 & 7 and 3,4, & 5 shorted V = 500VDC 5 F = 1kHz; V = 0 Dielectric Strength Input-to-Output V(Diel) 1000 Both Case Vac Rms. Pin 1 & 7 and 3, 4 & 5 shorted 60hz Sine Wave Rise Time Tr 20 µs VCC = 10V, IF(ON) = 10mA, tf 20 µs VCC = 10V, IF(ON) = 10mA, RL = 100Ω RL = 350Ω, CL = 15pF IF = 10mA , -55°C RL = 100Ω MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: [email protected] 9-7