UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) <15Ω@VGS = 10V. * Ultra Low gate charge (typical 8.0nC) * Low reverse transfer capacitance (CRSS = 3.0 pF(max)) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 1N60AL-AA3-R 1N60AG-AA3-R SOT-223 1N60AL-TM3-T 1N60AG-TM3-T TO-251 1N60AL-TN3-R 1N60AG-TN3-R TO-252 1N60AL-T92-B 1N60AG-T92-B TO-92 1N60AL-T92-K 1N60AG-T92-K TO-92 Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd Pin Assignment 1 2 3 G D S G D S G D S G D S G D S Packing Tape Reel Tube Tape Reel Tape Box Bulk 1 of 7 QW-R502-091.K 1N60A Power MOSFET MARKING INFORMATION PACKAGE MARKING 1N60A SOT-223 L: Lead Free G: Halogen Free Data Code 1 TO-251 TO-252 TO-92 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-091.K 1N60A Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified.) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current ID 0.5 A Pulsed Drain Current (Note 2) IDM 2 A Single Pulse(Note 3) EAS 50 mJ Avalanche Energy Repetitive(Note 2) EAR 3.6 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns 6.25 SOT-223 W Power Dissipation (TC=25°C) TO-251/TO-252 34 TO-92 3 PD SOT-223 0.05 Derate above 25°C TO-251/TO-252 0.27 W/°C TO-92 0.025 Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L=92mH, IAS=0.8A, VDD=50V, RG=0Ω, Starting TJ=25°C 4. ISD≤1.0A, di/dt≤100A/μs, VDD≤BVDSS, Starting TJ=25°C THERMAL DATA PARAMETER SOT-223 Junction to Ambient TO-251/TO-252 TO-92 SOT-223 Junction to Case TO-251/TO-252 TO-92 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 150 110 160 20 5 80 UNIT °C/W °C/W 3 of 7 QW-R502-091.K 1N60A Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250μA Drain-Source Leakage Current (TJ =25°C) VDS = 600V, VGS = 0V IDSS Drain-Source Leakage Current (TJ =125°C) Forward VGS = 30V, VDS = 0V Gate-Source Leakage Current IGSS Reverse VGS = -30V, VDS = 0V Breakdown Voltage Temperature ID = 250μA △BVDSS/△TJ Coefficient referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 0.5A DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS VDS=25V, VGS=0V, f=1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD (ON) Turn-On Rise Time tR VDD=300V, ID=0.5A, RG=5Ω (Note 1,2) Turn-Off Delay Time tD (OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS=480V, VGS=10V, ID=0.8A Gate-Source Charge QGS (Note 1,2) Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS=0V, ISD = 1.2A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS=0V, ISD = 1.2A di/dt = 100A/μs Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 600 V 10 10 100 -100 0.4 2.0 11 12 11 40 18 8 1.8 4.0 136 0.3 μA nA nA V/°C 4.5 15 V Ω 100 20 3 pF pF pF 34 32 90 46 10 ns ns ns ns nC nC nC 1.6 V 1.2 A 4.8 A ns μC 4 of 7 QW-R502-091.K 1N60A Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R502-091.K 1N60A Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDS 90% VDD VGS RG VGS D.U.T. 10V 10% tD(ON) Pulse Width≤ 1μs Duty Factor≤0.1% Switching Test Circuit 12V 0.2μF tF Switching Waveforms Same Type as D.U.T. 50kΩ tD(OFF) tR QG 10V 0.3μF QGS VDS QGD VGS DUT 1mA VGS Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R502-091.K 1N60A Power MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (µA) 300 Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 250 Drain Current, ID (µA) 200 150 100 50 200 150 100 50 0 0 0 0.5 1 1.5 2 2.5 3 3.5 Gate Threshold Voltage, VTH (V) 4 Drain Current, ID (A) Drain Current, ID (A) 0 100 200 300 400 500 600 700 800 Drain-Source Breakdown Voltage, BVDSS (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R502-091.K