Datasheet

UNISONIC TECHNOLOGIES CO., LTD
3N60
Power MOSFET
3A, 600V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 3N60 is a high voltage and high current power
MOSFET , designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PWM motor controls, high efficient DC to DC converters
and bridge circuits.

FEATURES
* VDS = 600V, ID = 3A
* RDS(ON) < 3.6Ω @VGS = 10 V
* Ultra low gate charge ( typical 18 nC )
* Low reverse transfer capacitance ( CRSS = typical 5.5 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness

SYMBOL
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QW-R502-110.H
3N60

Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
3N60L-TA3-T
3N60G-TA3-T
3N60L-TF1-T
3N60G-TF1-T
3N60L-TF3-T
3N60G-TF3-T
3N60L-TF3T-T
3N60G-TF3T-T
3N60L-TM3-T
3N60G-TM3-T
3N60L-TN3-R
3N60G-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Package
TO-220
TO-220F1
TO-220F
TO-220F3
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
MARKING INFORMATION
PACKAGE
TO-220
TO-220F
TO-220F1
TO-220F3
TO-251
TO-252
UNISONIC TECHNOLOGIES CO., LTD
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MARKING
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3N60

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
3.0
A
Continuous Drain Current
ID
3.0
A
Pulsed Drain Current (Note 2)
IDM
12
A
200
mJ
Single Pulsed (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
7.5
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
75
TO-220F/TO-220F1
34
Power Dissipation
PD
W
TO-220F3
TO-251/TO-252
50
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ.
3. L=44.4mH, IAS=3A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤3.0A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
Junction to Ambient
Junction to Case
PARAMETER
TO-220
TO-220F/TO-220F1
TO-220F3
TO-251/TO-252
TO-220
TO-220F/TO-220F1
TO-220F3
TO-251/TO-252
UNISONIC TECHNOLOGIES CO., LTD
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SYMBOL
RATING
62.5
UNIT
θJA
62.5
°C/W
110
1.67
θJC
3.68
°C/W
2.5
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3N60
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
IGSS
TEST CONDITIONS
VGS=0 V, ID=250 μA
VDS=600 V, VGS=0 V
VGS=30 V, VDS=0 V
VGS=-30 V, VDS=0 V
Breakdown Voltage Temperature
△BVDSS/△TJ ID=250μA, Referenced to 25°C
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10 V, ID=1.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
VDD=30V, ID=0.5A, RG=25Ω
(Note 1, 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
Total Gate Charge
QG
VDS=50V, ID=1.3A, IG=100μA
Gate-Source Charge
QGS
VGS=10V (Note 1, 2)
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS=0 V, IS=3.0A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
tRR
VGS=0V, IS=3.0A,
dIF/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
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MIN TYP MAX UNIT
600
10
100
-100
0.6
2.0
V
μA
nA
nA
V/℃
2.8
4.0
3.6
V
Ω
350
50
5.5
450
65
7.5
pF
pF
pF
35
50
60
70
100 150
65
75
18.5 23
5.2
4.9
ns
ns
ns
ns
nC
nC
nC
1.4
V
3.0
A
12
A
210
1.2
ns
μC
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UNISONIC TECHNOLOGIES CO., LTD
3N60

Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
+
-
L
RG
Driver
VGS
VGS
(Driver)
P.W.
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Period
D=
VDD
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
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Forward Voltage Drop
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Peak Diode Recovery dv/dt Waveforms
TEST CIRCUITS AND WAVEFORMS (Cont.)

Switching Test Circuit
12V
Same Type
as D.U.T.
50kΩ
0.2μF
Switching Waveforms
QG
10V
0.3μF
VDS
QGS
QGD
VGS
DUT
3mA
VGS
Charge
Gate Charge Test Circuit
Unclamped Inductive Switching Test Circuit
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Gate Charge Waveform
Unclamped Inductive Switching Waveforms
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TYPICAL CHARACTERISTICS
On-Resistance Variation vs.
Drain Current and Gate Voltage
On State Current vs.
Allowable Case Temperature
6
10
Reverse Drain Current, IDR (A)
Drain-Source On-Resistance,
RDS(ON) (Ω)

Power MOSFET
5
VGS=20V
4
VGS=10V
3
2
1
1
Note: TJ=25℃
0
0
2
4
6
8
10
12
Drain Current, ID (A)
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0.1
0.2 0.4 0.6 0.8 1.0 1.2
Notes:
1. VGS=0V
2. 250µs Test
1.4 1.6
1.8
Source-Drain Voltage, VSD (V)
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Drain-Source On-Resistance, RDS(ON)
(Normalized)
TYPICAL CHARACTERISTICS(Cont.)
Drain-Source Breakdown Voltage, BVDSS
(Normalized)

Power MOSFET
Maximum Drain Current vs. Case
Temperature
Transient Thermal Response Curve
3.0
1
2.5
D=0.5
2.0
0.2
0.1
0.1
1.5
0.05
0.02
1.0
0.01
Single Pulse
0.01
Notes:
1. θJC (t) = 1.18 /W Max.
2. Duty Factor, D=t1/t2
3. TJM-TC=PDM×θJC (t)
10-5
10-4 10-3
10-2
10-1
100
101
Square Wave Pulse Duration, t1 (sec)
0.5
0
25
50
75
100
125
Case Temperature, TC (°C)
150
Safe Operating Area – 600V
Operation in This Area is Limited by RDS(on)
101
100µs
1ms
10ms
100
DC
Notes:
1. TJ=25
2. TJ=150
3. Single Pulse
10-1
10-2
100
101
102
600
103
Drain-Source Voltage, VDS (V)
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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