3N60 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products N-Channel Power MOSFET (3A, 600Volts) DESCRIPTION The Nell 3N60 is a three-terminal silicon device with current conduction capability of 3A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. D D G S G D S TO-251 (I-PAK) (3N60F) TO-252 (D-PAK) (3N60G) D FEATURES RDS(ON) = 3.6Ω@VGS = 10V Ultra low gate charge(13nC max.) Low reverse transfer capacitance (C RSS = 5.5pF typical) G D GD S Fast switching capability 100% avalanche energy specified S TO-220F (3N60AF) TO-220AB (3 N60A ) Improved dv/dt capability 150°C operation temperature D (Drain) PRODUCT SUMMARY ID (A) 3 VDSS (V) 600 RDS(ON) (Ω) 3.6 @ V GS = 10V QG(nC) max. 13 G (Gate) S (Source) www.nellsemi.com Page 1 of 9 3N60 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL TEST CONDITIONS PARAMETER VALUE VDSS Drain to Source voltage T J =25°C to 150°C 600 V DGR Drain to Gate voltage R GS =20KΩ 600 V GS ID Gate to Source voltage UNIT V ±30 T C =25°C 3 Continuous Drain Current T C =100°C 1.86 A I DM Pulsed Drain current(Note 1) I AR Avalanche current(Note 1 ) E AR Repetitive avalanche energy(Note 1 ) I AR =3A, R GS =50Ω, V GS =10V 7.5 E AS Single pulse avalanche energy (Note 2 ) I AS =3A, L = 64mH 200 12 3 mJ dv/dt Peak diode recovery dv/dt(Note 3) TO-251/ TO-252 PD Total power dissipation 50 T C =25°C TO-220AB 75 TO-220F TJ T STG TL V /ns 4.5 W 34 Operation junction temperature -55 to 150 Storage temperature -55 to 150 Maximum soldering temperature, for 10 seconds ºC 300 1.6mm from case Mounting torque, #6-32 or M3 screw 10 (1.1) lbf . in (N . m) Note: 1. Repetitive rating: pulse width limited by junction temperature. 2 . I AS = 3 A, V DD = 50V, L = 64mH, R GS = 25Ω, starting T J =25°C. 3 . I SD ≤ 3 A, di/dt ≤ 200 A/µs, V DD ≤ V (BR)DSS , starting T J =25°C. THERMAL RESISTANCE SYMBOL Rth(j-c) PARAMETER Thermal resistance, junction to case Min. Typ. Max. TO-251/ TO-252 2.5 TO-220AB 1.7 TO-220F 3.7 TO-251/TO-252 100 TO-220AB 62.5 TO-220F 62.5 UNIT ºC/W Rth(j-a) Thermal resistance, junction to ambient www.nellsemi.com Page 2 of 9 3N60 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL V(BR)DSS PARAMETER Drain to Source breakdown voltage ∆V (BR)DSS/ ∆T J Breakdown voltage temperature coefficient I DSS Drain to source leakage current TEST CONDITIONS I D =250µA,V GS =0V Min. Typ. V 600 0.6 I D =250µA,V DS =V GS V/°C V DS =600V, V GS =0V T C =25°C 10.0 V DS =480V, V GS =0V T C =125°C 100 Gate to source forward leakage current V GS =30V,V DS =0V 100 Gate to source reverse leakage current V GS =-30V,V DS =0V -100 R DS(ON) Static drain to source on-state resistance I D =1.5A,V GS =10V V GS(TH) Gate threshold voltage V GS =V DS ,I D =250µA I GSS C ISS Input capacitance C OSS Output capacitance C RSS t d(ON) t d(OFF) tf 2.8 2.0 Ω V 50 65 Reverse transfer capacitance 5.5 7.5 Turn-on delay time 10 30 30 70 20 50 30 70 10 13 Turn-off delay time V DD =300V, V GS =10V, I D =3A, R GS =25Ω (Note 1, 2) Fall time QG Total gate charge Q GS Gate to source charge Q GD Gate to drain charge (Miller cgarge) V DD =480V,V GS =10V, I D =3A (Note 1,2) nA 4.0 450 V DS =25A, V GS =0V, f=1MHz µA 3.6 350 Rise time tr UNIT Max. pF ns 2.6 nC 5 SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL VSD Is (Is D ) PARAMETER TEST CONDITIONS Diode forward voltage I SD = 3A, V GS = 0V Continuous source to drain current Integral reverse P-N junction diode in the MOSFET Min. Typ. Max. UNIT 1.4 V 3 D (Drain) I SM 12 Pulsed source current A G (Gate) S (Source) t rr Reverse recovery time Q rr Reverse recovery charge I SD = 3A, V GS = 0V, dI F /dt = 100A/µs Note: 1. Pulse test: Pulse width ≤ 300 µs, duty cycle ≤ 2%. 2. Essentially independent of operating temperature. www.nellsemi.com Page 3 of 9 210 ns 1.2 µC 3N60 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ORDERING INFORMATION SCHEME 3 N 60 A Current rating, ID 3 = 3A MOSFET series N = N-Channel Voltage rating, VDS 60 = 600V Package type A = TO-220AB AF = TO-220F F = TO-251(I-PAK) G = TO-252(D-PAK) ■ TEST CIRCUITS AND WAVEFORMS Fig.1A Peak diode recovery dv/dt test circuit D.U.T. Fig.1B Peak diode recovery dv/dt waverforms + V GS (Driver) Period D= P.W. P.W. Period V DS V GS =10V + - l SD (D.U.T (D.U.T.) l FM , Body Diode forward current di/dt L l RM Body Diode Reverse Current RG Driver V GS Same Type as D.U.T. * dv/dt controlled by R G * l SD controlled by pulse period * D.U.T.-Device under test V DD V DS (D.U.T.) Body Diode Recovery dv/dt V DD Body Diode www.nellsemi.com Page 4 of 9 Forward Voltage Drop 3N60 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ■ TEST CIRCUITS AND WAVEFORMS (Cont.) Fig.2A Switching test circuit Fig.2B Switching Waveforms V DS RL 90% V DS V GS RG V DD D.U.T. V GS 10% 10V t d(ON) t d(OFF) tR Pulse Width ≤ 1µs Duty Factor ≤ 0.1% Fig.3A Gate charge test circuit tF Fig.3B Gate charge waveform V GS Same Type as D.U.T. 50kΩ 12V 0.2µF QG 10V 0.3µF V DS Q GS Q GD V GS D.U.T. 3mA Charge Fig.4A Unclamped lnductive switching test circuit Fig.4B Unclamped lnductive switching waveforms L V DS BV DSS l AS RG V DD l D(t) V DS(t) D.U.T. V DD 10V tp Time tp www.nellsemi.com Page 5 of 9 3N60 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ■ TYPICAL CHARACTERISTICS Fig.2 Transfer characteristics Fig.1 On-state characteristics 10 10 V GS 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V Bottorm:5.5V 1 7 6.5 Drain current, l D (A) Drain Current, l D (A) Top: 6 5.5 0.1 1 Notes: 1.250µs Pulse Test 2.T c =25°C Notes: 1.V DS =50V 2.250µs Pulse Test 0.1 0.1 10 1 2 Fig.4 Reverse drain current vs. source-drain voltage Fig.3 On-resistance variation vs. drain current and gate voltage 10 6 Reverse drain current, l SD (A) Drain-source on-resistance, R DS(ON) (Ω) 10 8 Gate-source voltage, V GS (V) Drain-to-source voltage, V DS (V) 5 4 V GS =20V 3 V GS =10V 2 1 1 Notes: 1.V GS =0V 2.250µs Test Notes:T J =25°C 0 0 2 6 4 8 10 12 0.1 0.2 14 0.6 0.4 0.8 1.0 1.4 1.2 1.6 Drain current, I D (A) Source to drain voltage, V SD (V) Fig.5 Capacitance characteristics (non-repetitive) Fig.6 Gate charge characteristics 12 C ISS =C GS +C GD (C DS =shorted) C OSS =C DS +C GD C RSS =C GD 500 C ISS 400 C OSS 300 Notes: 1.V GS =0V 2.f=1MHz 200 C RSS 100 Gate-source voltage, V GS (V) 600 Capacitance(pF) 6 4 1 10 V DS =120V 8 6 4 0 10 0 Drain-source voltage, V DS (V) www.nellsemi.com V DS =480V 2 0 0.1 V DS =300V 2 4 6 8 Total gate charge, Q G (nC) Page 6 of 9 10 3N60 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ■ TYPICAL CHARACTERISTICS Fig.8 On-resistance variation vs. junction temperature 3.0 1.2 Drain-source on-resistance, R DS(ON) Drain -source breakdown voltage variation, BV DSS Fig.7 Breakdown voltage variation vs. junction temperature 1.1 1.0 0.9 Note: 1.V GS =0V 2.I D =250µA 0.8 -100 -50 0 50 100 2.0 1.5 1.0 0.5 0.0 -100 200 150 2.5 Junction temperature, T J (°C) -50 0 50 100 150 200 Junction temperature, T J (°C) Fig.10 Maximum drain current vs. case temperature Fig.9 Transient thermal response curve 2.5 1 Drain current, l D (A) Thermal response, R th(j-c) (t) 3.0 D=0.5 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0.01 10 -5 Notes: 1.R th(j-c) =1.18°C/W Max. 2.Duty factor, D=t1/t2 3.T JM -Tc=P DM×R th(j-c) (t) 1.0 0.0 10 -4 10 -3 10 -2 10 0 10 -1 10 1 25 Operation in This Area is Limited by RDS(on) 10 1 100µs 1ms 10ms 10 0 DC Notes: 1.T J =25°C 2.T J =150°C 3.Single pulse 10 -2 10 0 10 1 10 2 600 10 3 Drain to Source voltage, V DS (V) www.nellsemi.com 50 75 100 125 Case temperature, T C (°C) Fig.11 Safe operating area - 600V Drain current,I D (A) 1.5 0.5 Square wave pulse duration, t 1 (SEC) 10 -1 2.0 Page 7 of 9 150 3N60 Series SEMICONDUCTOR Nell High Power Products Case Style TO-251 (I-PAK) 6.6(0.26) 2.4(0.095) 2.2(0.086) 6.4(0.52) 1.5(0.059) 5.4(0.212) 0.62(0.024) 0.48(0.019) 1.37(0.054) 5.2(0.204) 6.2(0.244) 6(0.236) 16.3(0.641) 15.9(0.626) 1.9(0.075) 1.8(0.071) 9.4(0.37) 9(0.354) 0.85(0.033) 0.76(0.03) 0.65(0.026) 0.55(0.021) 4.6(0.181) 4.4(0.173) 0.62(0.024) 0.45(0.017) TO-252 (D-PAK) 2.4(0.095) 2.2(0.086) 6.6(0.259) 6.4(0.251) 1.5(0.059) 5.4(0.212) 5.2(0.204) 0.62(0.024) 0.48(0.019) 1.37(0.054) 2 1 6.2(0.244) 6(0.236) 9.35(0.368) 10.1(0.397) 3 2 0.89(0.035) 0.64(0.025) 1.14(0.045) 0.76(0.030) 2.28(0.090) 0.62(0.024) 0.45(0.017) 4.57(0.180) TO-220AB 10.54 (0.415) MAX. 9.40 (0.370) 9.14 (0.360) 4.70 (0.185) 4.44 (0.1754) 3.91 (0.154) 3.74 (0.148) 1.39 (0.055) 1.14 (0.045) 2.87 (0.113) 2.62 (0.103) 3.68 (0.145) 3.43 (0.135) 1 PIN 2 16.13 (0.635) 15.87 (0.625) 3 4.06 (0.160) 3.56 (0.140) 15.32 (0.603) 14.55 (0.573) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 2.79 (0.110) 2.54 (0.100) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) D (Drain) 14.22 (0.560) 13.46 (0.530) 0.90 (0.035) 0.70 (0.028) 5.20 (0.205) 4.95 (0.195) 0.56 (0.022) 0.36 (0.014) G (Gate) S (Source) All dimensions in millimeters(inches) www.nellsemi.com Page 8 of 9 RoHS RoHS 3N60 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Case Style TO-220F 10.6 10.4 3.4 3.1 2.8 2.6 3.7 3.2 7.1 6.7 16.0 15.8 16.4 15.4 2 1 3 10° 3.3 3.1 13.7 13.5 2.54 TYP 0.9 0.7 0.48 0.44 2.54 TYP 2.85 2.65 4.8 4.6 D (Drain) G (Gate) S (Source) All dimensions in millimeters www.nellsemi.com Page 9 of 9