Datasheet

UNISONIC TECHNOLOGIES CO., LTD
7N90
Power MOSFET
7A, 900V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 7N90 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide costumers with planar stripe
and DMOS technology. This technology specializes in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC 7N90 is universally applied in active power factor
correction, electronic lamp ballast based on half bridge topology and
high efficient switched mode power supply.

FEATURES
* High switching speed
* RDS(ON) <1.8Ω @ VGS=10V, ID=3.5A
* 100% avalanche tested
* Improved dv/dt capability

SYMBOL
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7N90

Preliminary
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
7N90L-T3P-T
7N90G-T3P-T
7N90L-TF3-T
7N90G-TF3-T
7N90L-TF1-T
7N90G-TF1-T
7N90L-TF2-T
7N90G-TF2-T
7N90L-T2Q-T
7N90G-T2Q-T
7N90L-TQ2-T
7N90G-TQ2-T
7N90L-TQ2-R
7N90G-TQ2-R
Note: Pin Assignment: G: Gate
D: Drain S: Source

Power MOSFET
Package
TO-3P
TO-220F
TO-220F1
TO-220F2
TO-262
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
MARKING
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Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
900
V
Gate to Source Voltage
VGSS
±30
V
TC=25°C
7.0
A
ID
Continuous Drain Current
TC=100°C
4.4
A
Pulsed Drain Current (Note 2)
IDM
28
A
Avalanche Current (Note 2)
IAR
6.4
A
Single Pulsed Avalanche Energy (Note 3)
EAS
500
mJ
Repetitive Avalanche Energy (Note 2)
EAR
21
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.0
V/ns
TO-3P
240
TO-220F/TO-220F1
52
Power Dissipation
PD
W
TO-220F2
TO-262/TO-263
180
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L=20mH, IAS=7.0A, VDD= 50V, RG=25Ω, Starting TJ=25°C
4. ISD ≤7.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C

THERMAL DATA
PARAMETER
TO-3P
TO-220F/TO-220F1
Junction to Ambient
TO-220F2/TO-262
TO-263
TO-3P
TO-220F/TO-220F1
Junction to Case
TO-220F2
TO-262/TO-263
SYMBOL
UNISONIC TECHNOLOGIES CO., LTD
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θJA
RATINGS
40
62.5
UNIT
°C/W
0.52
θJC
2.4
°C/W
0.69
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
900
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250μA,Referenced to 25°C
VDS=900V, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=720V, TC=125°C
Forward
IGSS
VDS=0V ,VGS=30V
Gate-Source Leakage Current
Reverse
IGSS
VDS=0V ,VGS=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
3.0
Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=3.5A
Forward Transconductance
gFS
VDS=50V, ID=3.5A (Note 4)
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
VDS=25V,VGS=0V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDD=30V, ID=1A,
RG=25Ω (Note 4,5)
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
Total Gate Charge
QG
VDS=120V, VGS=10V,
Gate-Source Charge
QGS
ID=11A (Note 4,5)
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS =7.0A, VGS=0V
Body Diode Reverse Recovery Time
trr
VGS=0V, IS=7.0A,
dIF/dt=100A/μs (Note 4)
Body Diode Reverse Recovery Charge
QRR
Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
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TYP
MAX UNIT
0.96
10
100
100
-100
1.5
5.7
5.0
1.8
V
V/°C
µA
µA
nA
nA
V
Ω
S
1440 1880
140
185
17
23
pF
pF
pF
90
100
260
140
160
15
35
ns
ns
ns
ns
nC
nC
nC
6.4
25.6
1.4
400
4.3
A
A
V
ns
μC
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
VGS
Same Type
as DUT
12V
QG
10V
200nF
50kΩ
VDS
300nF
QGS
QGD
VGS
DUT
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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