RoHS RoHS 7N90 Series SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET 7A, 900Volts DESCRIPTION D The Nell 7N90 is a three-terminal silicon device with current conduction capability of 7A, fast switching speed, low on-state resistance, breakdown voltage rating of 900V, and max. threshold voltage of 5 volts. They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. G D G S DS TO-220F (7N90AF) TO-220AB (7N90A) FEATURES D (Drain) RDS(ON) = 1.8Ω @ VGS = 10V Ultra low gate charge(52nC max.) Low reverse transfer capacitance (C RSS = 17pF typical) G (Gate) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature S (Source) PRODUCT SUMMARY ID (A) 7 VDSS (V) 900 RDS(ON) (Ω) 1.8 @ V GS = 10V QG(nC) max. 52 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL TEST CONDITIONS PARAMETER VALUE VDSS Drain to Source voltage T J =25°C to 150°C 900 V DGR Drain to Gate voltage R GS =20KΩ 900 V GS ID Gate to Source voltage Continuous Drain Current T C =25°C 7.0 T C =100°C 4.4 A Pulsed Drain current(Note 1) I AR Avalanche current(Note 1) E AR Repetitive avalanche energy(Note 1) l AR =7A, R GS =50Ω, V GS =10V E AS Single pulse avalanche energy(Note 2) l AS =7A, L =30mH 28 7 Peak diode recovery dv/dt(Note 3) Total power dissipation T C =25°C PD Linear derating factor above T C =25 ° C T STG TL mJ 780 T C =25°C TO-220F W 32 TO-220AB 1.70 TO-220F 0.25 ° C/W -55 to 150 Storage temperature -55 to 150 Maximum soldering temperature, for 10 seconds 1.6mm from case Page 1 of 8 ºC 300 10 (1.1) Note: 1. Repetitive rating: pulse width limited by junction temperature. 2 . l AS =7 A, L =30 mH , V DD =50 V , R GS =25 Ω , starting T J =25 °C. 3 . I SD ≤ 7 A, di/dt ≤ 200 A/µs, V DD ≤ V (BR)DSS , starting T J = 25 °C. V /ns 210 Operation junction temperature Mounting torque, #6-32 or M3 screw www.nellsemi.com 25 4 TO-220AB TJ V ±30 I DM dv/dt UNIT lbf . in (N . m) RoHS RoHS 7N90 Series SEMICONDUCTOR Nell High Power Products THERMAL RESISTANCE SYMBOL PARAMETER Rth(j-c) Thermal resistance, junction to case Rth(j-a) Thermal resistance, junction to ambient MIN. TYP. MAX. UNIT TO-220AB TO-220F 0.5 3.1 TO-220AB 62.5 62.5 TO-220F ºC/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL TEST CONDITIONS PARAMETER MIN. TYP. MAX. UNIT OFF CHARACTERISTICS V(BR)DSS ▲V (BR)DSS/▲T J I DSS Drain to source breakdown voltage I D = 250μA, V GS = 0V Breakdown voltage temperature coefficient I D = 250μA, V DS =V GS Drain to source leakage current 900 V V/ºC 0.96 V DS =900V, V GS =0V T C =25°C V DS =720V, V GS =0V T C =125°C 10 μA 100 Gate to source forward leakage current V GS = 30V, V DS = 0V 100 Gate to source reverse leakage current V GS = -30V, V DS = 0V -100 I GSS nA ON CHARACTERISTICS R DS(ON) Static drain to source on-state resistance V GS =10V, l D =3.5A V GS(TH) Gate threshold voltage V GS =V DS , I D =250μA Forward transconductance V DS =50V, I D =3.5A g FS 1.5 3 1.8 Ω 5 V S 5.7 DYNAMIC CHARACTERISTICS C ISS Input capacitance C OSS Output capacitance C RSS Reverse transfer capacitance V DS =25V, V GS =0V, f=1MHz 1440 1880 140 185 17 23 35 80 80 170 95 200 55 120 40 52 pF SWITCHING CHARACTERISTICS t d(ON) tr t d(OFF) tf QG Turn-on delay time Rise time Turn-off delay time V DD =450V, V GS =10V I D =7A, R GS =25Ω (Note1,2) Fall time Total gate charge Q GS Gate to source charge Q GD Gate to drain charge (Miller charge) V DD = 720V, V GS =10V I D =7A, (Note1,2) 8.5 ns nC 20 SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL VSD Is (Is D ) TEST CONDITIONS PARAMETER MIN. Diode forward voltage I SD = 7A, V GS = 0V Continuous source to drain current Integral reverse P-N junction diode in the MOSFET D (Drain) TYP. MAX. UNIT 1.4 V 7 TO-220F I SM Pulsed source current t rr Reverse recovery time Q rr Reverse recovery charge 28 G (Gate) A S (Source) I SD = 7A, V GS = 0V, dI F /dt = 100A/µs Note: 1. Pulse test: Pulse width ≤ 300 µs, duty cycle ≤ 2%. 2. Essentially independent of operating temperature. www.nellsemi.com Page 2 of 8 400 ns 4.3 μC 7N90 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ORDERING INFORMATION SCHEME 7 N 90 A Current rating, ID 7 = 7A MOSFET series N = N-Channel Voltage rating, VDS 90 = 900V Package type A = TO-220AB AF = TO-220F ■ TEST CIRCUITS Fig.1A Peak diode recovery dv/dt test circuit D.U.T. Fig.1B Peak diode recovery dv/dt waverforms + V GS (Driver) Period D= P.W. P.W. Period V DS V GS =10V + - l SD (D.U.T) l FM , Body Diode forward current di/dt L l RM Body Diode Reverse Current RG Driver V GS Same Type as D.U.T. * dv/dt controlled by R G * l SD controlled by pulse period * D.U.T.-Device under test V DD V DS (D.U.T) Body Diode Recovery dv/dt V DD Body Diode www.nellsemi.com Page 3 of 8 Forward Voltage Drop 7N90 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ■ TEST CIRCUIT(Cont.) Fig.2A Switching test circuit Fig.2B Switching Waveforms V DS RL 90% V DS V GS RG V DD D.U.T. V GS 10% 10V t d(ON) Pulse Width ≤ 1µs Duty Factor ≤ 0.1% t d(OFF) tR Fig.3A Gate charge test circuit tF Fig.3B Gate charge waveform V GS Same Type as D.U.T. 50kΩ 12V 0.2µF QG 10V 0.3µF V DS Q GS Q GD V GS D.U.T. 3mA Charge Fig.4A Unclamped lnductive switching test circuit Fig.4B Unclamped lnductive switching waveforms L V DS BV DSS l AS RG V DD l D(t) V DS(t) D.U.T. V DD 10V tp Time tp www.nellsemi.com Page 4 of 8 7N90 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ■ TYPICAL CHARACTERISTICS Fig.2 Typical transfer characteristics Fig.1 Typical output charactreistics 12 8 6 10 Drain current, l D (A) 10 Drain Current, l D (A) Note: 1. 20µs Pulse Test 2. T C = 25°C V GS Top: 15V 10V 8V 7V 6V 5V 4.5V Bottorm: 4 V 4.5V 4 2 T J = -55°C 1 V DS = 30V 0.1 0 10 5 15 20 0 2 8 6 4 10 Drain-to-Source voltage, V DS (V) Gate-to-Source voltage, V GS (V) Fig.3 On-resistance vs. drain current Fig.4 Typical gate charge vs. gate-source voltage 12 Gate-Source voltage,V GS (V) 2.5 2.0 V GS = 10 V V GS = 20 V 1.5 1.0 T J = 25 °C 1 V DS = 180V 10 V DS = 450V 8 V DS = 720V 6 4 2 *Note:I D =7A 0 0 2 8 6 4 10 0 5 15 10 20 30 Total gate charge, Q G (nC) Drain current, I D (A) Fig.5 On-resistance variation vs. Junction temperature Fig.6 Source-drain diode forward voltage 3.0 30 Reverse drain current, I SD (A) Drain-Source on-resistance, R DS(ON) (Normalized) T J = 25 °C V GS =4.0V 0 On-resistance, R DS(ON) (Ω) T J = 15 0°C 2.5 2.0 1.5 1.0 *Notes: 1.V GS =10V 2.I D =3.5A 0.5 0 20 15 0°C 25 °C 10 V GS =0V 0 -80 -40 0 40 80 120 0 160 1.0 1.5 Sourse-to-drain voltage, V SD (A) Junction temperature, T J (°C) www.nellsemi.com 0.5 Page 5 of 8 2.0 7N90 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ■ TYPICAL CHARACTERISTICS Fig.8 Junction temperature vs. B VR(DSS) Fig.7 Maximum drain current vs. Case temperature Drain-Source breakdown voltage V (BR)DSS (Normalized) 10 Drain Current, l D (A) 8 6 4 2 0 25 50 100 75 1.15 1.1 1.05 1.0 0.95 0.90 *Notes: 1.V GS =0V 2.I D =250µA 0.85 0.80 -80 150 125 1.2 -40 0 40 120 80 160 Junction temperature, T J (°C) Case temperature, T C (°C) Fig.9 Typical Capacitance vs. drain-surce voltage Fig.10-1 Maximum safe operating area for 7N90A 4000 Notes: 1.V GS =0V 2.f=1MHz 3.T C =25°C 3000 10 2 Operation in This Area is Limited by RDS(on) 10µs Drain current, l D (mA) Capacitance (pF) C ISS =C GS +C GD (C DS =shorted) C OSS =C DS +C GD C RSS =C GD C ISS 2000 C OSS 1000 10 1 10 0 10 -1 10 -2 100µs 1ms 10ms 100ms DC *Notes: 1.T C =25°C 2.T J =150°C 3. Single pulse C RSS 0 10 0 10 1 0.1 Drain-Source voltage, V DS (V) Drain-source voltage, V DS (V) Fig.10-2 Maximum safe operating area for 7N90AF Drain current, I D (A) 10 2 Operation in This Area is Limited by RDS(on) 10µs 100µs 1ms 10 10ms 10 0 100ms DC *Notes: 1.T C =25°C 2.T J =150°C 3. Single pulse 10 -1 10 -2 0 10 100 1000 Drain-source voltage, V DS (V) www.nellsemi.com 100 Page 6of 8 1000 7N90 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ■ TYPICAL CHARACTERISTICS Normalized effective transient thermal impedance Fig.11 Normalized thermal transient impedance, junction-to-ambient for 7N90A D = 0.5 0.2 10 -1 0.1 0.05 PDM 0.02 0.01 10 -2 t1 t2 Notes: 1.R th(j-c) (t)=0.5°C/W Max. 2.Duty factor, D=t1/t2 3.T JM -Tc=P DM×R th(j-c) (t) Single pulse 10 -5 10 -4 10 -3 10 -2 10 0 10 -1 10 1 Square wave pulse duration (sec.), t 1 Normalized effective transient thermal impedance Fig.11-2 Normalized thermal transient impedance, junction-to-ambient for 7N90AF D = 0.5 10 0 0.2 0.1 0.05 10 -1 PDM 0.02 t1 t2 0.01 Notes: 1.R th(j-c) (t)=3.1°C/W Max. 2.Duty factor, D=t1/t2 3.T JM -Tc=P DM×R th(j-c) (t) Single pulse 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 Square wave pulse duration (sec.), t 1 www.nellsemi.com Page 7 of 8 10 0 10 1 7N90 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products TO-220AB 10.54 (0.415) MAX. 9.40 (0.370) 9.14 (0.360) 4.70 (0.185) 4.44 (0.1754) 3.91 (0.154) 3.74 (0.148) 1.39 (0.055) 1.14 (0.045) 2.87 (0.113) 2.62 (0.103) 3.68 (0.145) 3.43 (0.135) PIN 2 1 16.13 (0.635) 15.87 (0.625) 3 4.06 (0.160) 3.56 (0.140) 15.32 (0.603) 14.55 (0.573) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 2.79 (0.110) 2.54 (0.100) 1.45 (0.057) 1.14 (0.045) 14.22 (0.560) 13.46 (0.530) 2.67 (0.105) 2.41 (0.095) 0.90 (0.035) 0.70 (0.028) 2.65 (0.104) 2.45 (0.096) 0.56 (0.022) 0.36 (0.014) 5.20 (0.205) 4.95 (0.195) 10.6 10.4 TO-220F 3.4 3.1 2.8 2.6 3.7 3.2 7.1 6.7 16.0 15.8 16.4 15.4 2 1 3 10° 3.3 3.1 13.7 13.5 2.54 TYP 0.9 0.7 0.48 0.44 2.54 TYP 2.85 2.65 4.8 4.6 D (Drain) G (Gate) S (Source) All dimensions in millimeters www.nellsemi.com Page 8 of 8