BPW34, BPW34S www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: leaded • Package form: top view • Dimensions (L x W x H in mm): 5.4 x 4.3 x 3.2 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times • Angle of half sensitivity: ϕ = ± 65° 94 8583 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 DESCRIPTION BPW34 is a PIN photodiode with high speed and high radiant sensitivity in miniature, flat, top view, clear plastic package. It is sensitive to visible and near infrared radiation. BPW34S is packed in tubes, specifications like BPW34. APPLICATIONS • High speed photo detector PRODUCT SUMMARY Ira (μA) ϕ (deg) λ0.1 (nm) BPW34 50 ± 65 430 to 1100 BPW34S 50 ± 65 430 to 1100 PACKAGE FORM COMPONENT Note • Test condition see table “Basic Characteristics” ORDERING INFORMATION PACKAGING REMARKS BPW34 Bulk MOQ: 3000 pcs, 3000 pcs/bulk Top view BPW34S Tube MOQ: 1800 pcs, 45 pcs/tube Top view ORDERING CODE Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Power dissipation Tamb ≤ 25 °C Junction temperature Operating temperature range Thermal resistance junction/ambient Rev. 2.1, 23-Aug-11 VALUE VR 60 UNIT V PV 215 mW Tj 100 °C Tamb - 40 to + 100 °C °C Tstg - 40 to + 100 t≤3s Tsd 260 °C Connected with Cu wire, 0.14 mm2 RthJA 350 K/W Storage temperature range Soldering temperature SYMBOL Document Number: 81521 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPW34, BPW34S www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. Breakdown voltage IR = 100 μA, E = 0 V(BR) 60 MAX. UNIT V VR = 10 V, E = 0 Iro 2 VR = 0 V, f = 1 MHz, E = 0 CD 70 VR = 3 V, f = 1 MHz, E = 0 CD 25 Reverse dark current Diode capacitance TYP. 30 nA 40 pF pF Open circuit voltage Ee = 1 mW/cm2, λ = 950 nm Vo 350 mV Temperature coefficient of Vo Ee = 1 mW/cm2, λ = 950 nm TKVo - 2.6 mV/K μA EA = 1 klx Ik 70 Ee = 1 mW/cm2, λ = 950 nm Ik 47 μA Temperature coefficient of Ik Ee = 1 mW/cm2, λ = 950 nm TKIk 0.1 %/K EA = 1 klx, VR = 5 V Ira 75 μA Reverse light current Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V 50 μA Short circuit current 40 Ira Angle of half sensitivity ϕ ± 65 deg Wavelength of peak sensitivity λp 900 nm λ0.1 430 to 1100 nm VR = 10 V, λ = 950 nm NEP 4 x 10-14 W/√Hz Rise time VR = 10 V, RL = 1 kΩ, λ = 820 nm tr 100 ns Fall time VR = 10 V, RL = 1 kΩ, λ = 820 nm tf 100 ns Range of spectral bandwidth Noise equivalent power BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Ira, rel - Relative Reverse Light Current Iro - Reverse Dark Current (nA) 1000 100 10 VR = 10 V 1 20 94 8403 40 60 80 Tamb - Ambient Temperature (°C) VR = 5 V λ = 950 nm 1.2 1.0 0.8 0.6 0 100 Fig. 1 - Reverse Dark Current vs. Ambient Temperature Rev. 2.1, 23-Aug-11 1.4 94 8416 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Document Number: 81521 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPW34, BPW34S www.vishay.com Vishay Semiconductors 80 CD - Diode Capacitance (pF) Ira - Reverse Light Current (µA) 1000 100 10 VR = 5 V λ = 950 nm 1 0.1 0.01 0.1 20 0 0.1 Ee - Irradiance (mW/cm2) 94 8417 40 10 1 E=0 f = 1 MHz 60 1 10 100 VR - Reverse Voltage (V) 948407 Fig. 6 - Diode Capacitance vs. Reverse Voltage Fig. 3 - Reverse Light Current vs. Irradiance S(λ)rel - Relative Spectral Sensitivity 100 10 VR = 5 V 1 0.1 101 102 103 0.8 0.6 0.4 0.2 0 104 EA - Illuminance (lx) 94 8418 1.0 350 550 Fig. 4 - Reverse Light Current vs. Illuminance 750 Fig. 7 - Relative Spectral Sensitivity vs. Wavelength 0° 100 10° 20° 30° 1 mW/cm Srel - Relative Radiant Sensitivity Ira - Reverse Light Current (µA) 1150 950 λ - Wavelength (nm) 94 8420 2 0.5 mW/cm2 2 0.2 mW/cm 10 0.1 mW/cm2 0.05 mW/cm2 λ = 950 nm 1 0.1 94 8419 1 10 0.9 50° 0.8 60° 70° 0.7 100 VR - Reverse Voltage (V) Fig. 5 - Reverse Light Current vs. Reverse Voltage Rev. 2.1, 23-Aug-11 40° 1.0 ϕ - Angular Displacement Ira - Reverse Light Current (µA) 1000 80° 0.6 0.4 0.2 0 94 8406 Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement Document Number: 81521 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPW34, BPW34S www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 96 12186 TUBE PACKAGING DIMENSIONS in millimeters 10.7 Quantity per tube: 45 pcs Quantity per box: 1800 pcs 9.5 214.5 Stopper 18800 Fig. 9 - Drawing Proportions not scaled Rev. 2.1, 23-Aug-11 Document Number: 81521 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000