VISHAY VBP104S

VBP104S, VBP104SR
www.vishay.com
Vishay Semiconductors
Silicon PIN Photodiode
FEATURES
• Package type: surface mount
• Package form: GW, RGW
VBP104S
• Dimensions (L x W x H in mm): 6.4 x 3.9 x 1.2
• Radiant sensitive area (in mm2): 4.4
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity:  = ± 65°
• Floor life: 168 h, MSL 3, acc. J-STD-020
VBP104SR
• Lead (Pb)-free reflow soldering
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
DESCRIPTION
• High speed photo detector
VBP104S and VBP104SR are high speed and high sensitive
PIN photodiodes. It is a surface mount device (SMD)
including the chip with a 4.4 mm2 sensitive area detecting
visible and near infrared radiation.
PRODUCT SUMMARY
Ira (μA)
 (deg)
0.1 (nm)
VBP104S
35
± 65
430 to 1100
VBP104SR
35
± 65
430 to 1100
COMPONENT
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
VBP104S
Tape and reel
MOQ: 1000 pcs, 1000 pcs/reel
Gullwing
VBP104SR
Tape and reel
MOQ: 1000 pcs, 1000 pcs/reel
Reverse gullwing
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Power dissipation
Tamb 25 °C
Junction temperature
SYMBOL
VALUE
VR
60
UNIT
V
PV
215
mW
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 100
°C
Storage temperature range
Tstg
- 40 to + 100
°C
Tsd
260
°C
RthJA
350
K/W
Soldering temperature
Acc. reflow solder profile fig. 8
Thermal resistance junction/ambient
Rev. 1.3, 10-Aug-11
1
Document Number: 81170
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBP104S, VBP104SR
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
IF = 50 mA
VF
TYP.
MAX.
UNIT
1
1.3
V
IR = 100 μA, E = 0
V(BR)
VR = 10 V, E = 0
Iro
2
30
nA
VR = 0 V, f = 1 MHz, E = 0
CD
48
VR = 3 V, f = 1 MHz, E = 0
CD
17
40
pF
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
MIN.
60
V
pF
Open circuit voltage
Ee = 1 mW/cm2,  = 950 nm
Vo
350
mV
Temperature coefficient of Vo
Ee = 1 mW/cm2,  = 950 nm
TKVo
- 2.6
mV/K
Short circuit current
Ee = 1 mW/cm2,  = 950 nm
Ik
32
μA
Temperature coefficient of Ik
Ee = 1 mW/cm2,  = 950 nm
TKIk
0.1
%/K
Reverse light current
Ee = 1 mW/cm2,  = 950 nm,
VR = 5 V
Ira
35
μA
25
Angle of half sensitivity

± 65
deg
Wavelength of peak sensitivity
p
940
nm
Range of spectral bandwidth
0.1
430 to 1100
nm
Noise equivalent power
VR = 10 V,  = 950 nm
NEP
4 x 10-14
W/Hz
Rise time
VR = 10 V, RL = 1 k,
 = 820 nm
tr
100
ns
Fall time
VR = 10 V, RL = 1 k,
 = 820 nm
tf
100
ns
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
I ra rel - Relative Reverse Light Current
Iro - Reverse Dark Current (nA)
1000
100
10
VR = 10 V
1
20
94 8403
40
60
80
VR = 5 V
λ = 950 nm
1.2
1.0
0.8
0.6
100
0
Tamb - Ambient Temperature (°C)
94 8409
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Rev. 1.3, 10-Aug-11
1.4
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
2
Document Number: 81170
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBP104S, VBP104SR
www.vishay.com
Vishay Semiconductors
S(λ)rel - Relative Spectral Sensitivity
100
10
VR = 5 V
λ = 950 nm
1
0.8
0.6
0.4
0.2
0
0.1
0.01
0.1
10
1
350
Ee - Irradiance (mW/cm2)
94 8421
550
750
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
0°
100
10°
20°
30°
Srel - Relative Radiant Sensitivity
λ = 950 nm
1 mW/cm2
0.5 mW/cm2
10
1150
950
λ - Wavelength (nm)
94 8420
Fig. 3 - Reverse Light Current vs. Irradiance
Ira - Reverse Light Current (µA)
1.0
0.2 mW/cm2
2
0.1 mW/cm
0.05 mW/cm2
40°
1.0
0.9
50°
0.8
60°
70°
0.7
ϕ - Angular Displacement
Ira - Reverse Light Current (µA)
1000
80°
1
0.1
1
0.6
100
10
VR - Reverse Voltage (V)
94 8422
0.4
0.2
0
94 8406
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
CD - Diode Capacitance (pF)
80
E=0
f = 1 MHz
60
40
20
0
0.1
94 8423
1
100
10
VR - Reverse Voltage (V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Rev. 1.3, 10-Aug-11
3
Document Number: 81170
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBP104S, VBP104SR
www.vishay.com
Vishay Semiconductors
0.1 - 0.1
0.15 ± 0.02
1.2 ± 0.1
0.75 ± 0.05
(0.47 ref.)
PACKAGE DIMENSIONS FOR VBP104S in millimeters
Flat area 0.3 min.
4.4 ± 0.1
0.18 ± 0.2
2.2
Chip Size
2.4 x 2.4
Cathode
0.8 ± 0.1
1.6 ± 0.1
3.9 ± 0.1
1.95
Anode
1 ± 0.15
6.4 ± 0.3
technical drawings
according to DIN
specifications
Recommended solder pad
8.9
1.8
5.4
Drawing-No.: 6.541-5088.01-4
Issue: 1; 15.04.10
22107
Rev. 1.3, 10-Aug-11
4
Document Number: 81170
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBP104S, VBP104SR
www.vishay.com
Vishay Semiconductors
0.1 min.
(0.47 ref.)
Flat area 0.3 min.
0.15 ± 0.02
1.2 ± 0.1
0.75 ± 0.05
PACKAGE DIMENSIONS FOR VBP104SR in millimeters
4.4 ± 0.1
0.18 ± 0.2
2.2
Chip Size
Cathode
0.8 ± 0.1
Anode
3.9 ± 0.1
1.6 ± 0.1
1.95
2.4 x 2.4
1 ± 0.15
6.4 ± 0.3
technical drawings
according to DIN
Recommended solder pad
specifications
8.9
1.8
5.4
Drawing-No.: 6.541-5087.01-4
Issue: 1; 15.04.10
22106
Rev. 1.3, 10-Aug-11
5
Document Number: 81170
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBP104S, VBP104SR
www.vishay.com
Vishay Semiconductors
TAPING DIMENSIONS FOR VBP104S in millimeters
21730
TAPING DIMENSIONS FOR VBP104SR in millimeters
21731
Rev. 1.3, 10-Aug-11
6
Document Number: 81170
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBP104S, VBP104SR
www.vishay.com
Vishay Semiconductors
REEL DIMENSIONS FOR VBP104S AND VBP104SR in millimeters
21732
SOLDER PROFILE
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
300
255 °C
240 °C
217 °C
250
Temperature (°C)
max. 260 °C
245 °C
200
FLOOR LIFE
max. 30 s
Time between soldering and removing from MBB must not
exceed the time indicated in J-STD-020:
Moisture sensitivity: level 3
Floor life: 168 h
Conditions: Tamb < 30 °C, RH < 60 %
150
max. 100 s
max. 120 s
100
max. ramp up 3 °C/s max. ramp down 6 °C/s
50
0
0
19841
50
100
150
200
250
DRYING
300
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or
recommended conditions:
192 h at 40 °C (+ 5 °C), RH < 5 %
or
96 h at 60 °C (+ 5 °C), RH < 5 %.
Time (s)
Fig. 8 - Lead (Pb)-free Reflow Solder Profile
acc. J-STD-020
Rev. 1.3, 10-Aug-11
7
Document Number: 81170
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
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Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1