UNISONIC TECHNOLOGIES CO., LTD 4N65-E Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65-E is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications including power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-964.E 4N65-E Power MOSFET ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 4N65L-TA3-T 4N65G-TA3-T TO-220 4N65L-TF1-T 4N65G-TF1-T TO-220F1 4N65L-TF2-T 4N65G-TF2-T TO-220F2 4N65L-TF3-T 4N65G-TF3-T TO-220F 4N65L-TF3T-T 4N65G-TF3T-T TO-220F3 4N65L-TM3-T 4N65G-TM3-T TO-251 4N65L-TMS-T 4N65G-TMS-T TO-251S 4N65L-TMS2-T 4N65G-TMS2-T TO-251S2 4N65L-TMS4-T 4N65G-TMS4-T TO-251S4 4N65L-TN3-R 4N65G-TN3-R TO-252 4N65L-TND-R 4N65G-TND-R TO-252D 4N65L-T2Q-T 4N65G-T2Q-T TO-262 4N65L-TQ2-R 4N65G-TQ2-R TO-263 4N65L-TQ2-T 4N65G-TQ2-T TO-263 4N65G-E-K08-5060-R DFN-8(5×6) Note: Pin Assignment: G: Gate D: Drain S: Source 1 G G G G G G G G G G G G G G S 2 D D D D D D D D D D D D D D S Pin Assignment 3 4 5 6 S - - S - - S - - S - - S - - S - - S - - S - - S - - S - - S - - S - - S - - S - - S G D D 7 D 8 D Packing Tube Tube Tube Tube Tube Tube Tube Tube Tube Tape Reel Tape Reel Tube Tape Reel Tube Tape Reel (1) T: Tube, R: Tape Reel (2) TA3: TO-220, TF1: TO-220F1, TF2: TO-220F2 4N65L-TA3-T (1)Packing Type (2)Package Type (3)Green Package TF3: TO-220F, TF3T: TO-220F3, TM3: TO-251, TMS: TO-251S, TMS2: TO-251S2, TN3: TO-252, TMS4: TO-251S4, TND: TO-252D, T2Q: TO-262, TQ2: TO-263, K08-5060: DFN-8(5×6) (3) L: Lead Free, G: Halogen Free and Lead Free MARKING PACKAGE TO-220 TO-220F TO-220F1 TO-220F2 TO-220F3 TO-251 TO-251S MARKING TO-251S2 TO-251S4 TO-252 TO-252D TO-262 TO-263 DFN-8(5×6) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-964.E 4N65-E Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note2) IAR 4.4 A Continuous ID 4.0 A Drain Current 16 A Pulsed (Note2) IDM Single Pulsed (Note3) EAS 200 mJ Avalanche Energy 10.6 mJ Repetitive (Note2) EAR Peak Diode Recovery dv/dt (Note4) dv/dt 4.5 V/ns TO-220/TO-262/TO-263 106 W TO-220F/TO-220F1 35 W TO-220F3 TO-220F2 36 W Power Dissipation PD TO-251/ TO-251S TO-251S2/TO-251S4 50 W TO-252/TO-252D DFN-8(5×6) 30 W Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L = 30mH, IAS = 3.65A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case PACKAGE TO-220/TO-262/TO-263 TO-220F/TO-220F1 TO-220F2/TO-220F3 TO-251/ TO-251S TO-251S2/TO-251S4 TO-252/TO-252D DFN-8(5×6) TO-220/TO-262/TO-263 TO-220F/TO-220F1 TO-220F3 TO-220F2 TO-251/ TO-251S TO-251S2/TO-251S4 TO-252/TO-252D DFN-8(5×6) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL RATINGS UNIT 62.5 °С/W 110 °С/W 75 1.18 °С/W °С/W 3.5 °С/W 3.4 °С/W 2.5 °С/W 4.17 °С/W θJA θJC 3 of 7 QW-R502-964.E 4N65-E Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250μA 650 V Drain-Source Leakage Current IDSS VDS = 650 V, VGS = 0 V 10 μA Forward VGS = 30 V, VDS = 0 V 100 nA Gate-Source Leakage Current IGSS -100 nA Reverse VGS = -30 V, VDS = 0 V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C 0.6 V/°С ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 2.2A 2.3 2.5 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 500 580 pF VDS = 25 V, VGS = 0V, Output Capacitance COSS 90 110 pF f = 1MHz 15 18 pF Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 42 80 ns VDS = 325V, ID = 4.0A, Turn-On Rise Time tR 60 100 ns RG = 25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) 135 175 ns Turn-Off Fall Time tF 70 110 ns Total Gate Charge QG 70 90 nC VDS= 520V, ID= 4.0A, Gate-Source Charge QGS 15 21 nC VGS= 10V (Note 1, 2) 21 27 nC Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 4.4A 1.4 V Maximum Continuous Drain-Source IS 4.4 A Diode Forward Current Maximum Pulsed Drain-Source Diode ISM 17.6 A Forward Current Reverse Recovery Time trr 250 ns VGS = 0V, IS = 4.4A, dIF/dt = 100 A/μs (Note 1) Reverse Recovery Charge QRR 1.5 μC Note: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R502-964.E 4N65-E Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R502-964.E 4N65-E Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDD VGS RG D.U.T. 10V Pulse Width≤ 1μs Duty Factor≤0.1% Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R502-964.E 4N65-E Power MOSFET TYPICAL CHARACTERISTICS Drain-Source Leakage Current vs. Junction Temperature Drain-Source Breakdown Voltage, BVDSS (V) 800 TO-252 750 TO-220F1 700 650 600 550 -40 0 50 100 200 Junction Temperature, TJ (°C) Drain-Source Leakage Current, IDSS (μA) Drain-Source Breakdown Voltage vs. Junction Temperature 10 TO-220F1 TO-252 1 0.1 0.01 0.001 0 25 50 75 100 125 150 Junction Temperature, TJ (°C) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R502-964.E