Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2N60-CB
Power MOSFET
2.0A, 600V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 2N60-CB is a high voltage power MOSFET
and is designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance
and have a high rugged avalanche characteristics. This
power MOSFET is usually used at high speed switching
applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.

FEATURES
* RDS(ON) < 4.6Ω @ VGS = 10V, ID = 1.0A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness

SYMBOL
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Copyright © 2016 Unisonic Technologies Co., Ltd
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QW-R209-071.C
2N60-CB

Power MOSFET
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
2N60L-T60-T
2N60G-T60-T
TO-126
2N60G-AA3-R
SOT-223
2N60L-TA3-T
2N60G-TA3-T
TO-220
2N60L-TF3-T
2N60G-TF3-T
TO-220F
2N60L-TF1-T
2N60G-TF1-T
TO-220F1
2N60L-TF2-T
2N60G-TF2-T
TO-220F2
2N60L-TF3T-T
2N60G-TF3T-T
TO-220F3
2N60L-TM3-T
2N60G-TM3-T
TO-251
2N60L-TMS-T
2N60G-TMS-T
TO-251S
2N60L-TMS2-T
2N60G-TMS2-T
TO-251S2
2N60L-TMS4-T
2N60G-TMS4-T
TO-251S4
2N60L-TN3-R
2N60G-TN3-R
TO-252
2N60L-TND-R
2N60G-TND-R
TO-252D
2N60G-K08-5060-R
DFN-8(5×6)
Note: Pin Assignment: G: Gate
D: Drain
S: Source
2N60L-TA3-T
(1)Packing Type
(2)Package Type
(3)Green Package

1
G
G
G
G
G
G
G
G
G
G
G
G
G
S
2
D
D
D
D
D
D
D
D
D
D
D
D
D
S
Pin Assignment
3 4 5 6 7
S S
S S S S S S S S S S S S G D D D
8
D
Packing
Bulk
Tape Reel
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
Tape Reel
(1) T: Tube, R: Tape Reel
(2) T60: TO-126, AA3: SOT-223, TA3: TO-220,
TF3: TO-220F, TF1: TO-220F1, TF1: TO-220F2,
TF3T: TO-220F3, TM3: TO-251, TMS: TO-251S,
TMS2: TO-251S2, TMS4: TO-251S4,
TN3: TO-252, TND: TO-252D,
K08-5060: DFN-8(5×6)
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
PACKAGE
MARKING
TO-126
SOT-223
TO-220 / TO-220F
TO-220F1 / TO-220F2
TO-220F3 / TO-251
TO-251S / TO-251S2
TO-251S4 / TO-252
TO-252D
DFN-8(5×6)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R209-071.C
2N60-CB

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
2.0
A
Continuous
ID
2.0
A
Drain Current
8.0
A
Pulsed (Note 2)
IDM
Avalanche Energy
Single Pulsed (Note 3)
EAS
72
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
2.72
V/ns
TO-126
40
W
SOT-223
44
W
TO-220
55
W
TO-220F/TO-220F1
24
W
TO-220F3
Power Dissipation
PD
TO-220F2
25
W
TO-251/TO-251S
TO-251S2/TO-251S4
44
W
TO-252/TO-252D
DFN-8(5×6)
22
W
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L=25mH, IAS=2.4A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤2A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
TO-126
SOT-223
TO-220/TO-220F
TO-220F1/ TO-220F2
Junction to Ambient
TO-220F3
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
DFN-8(5×6)
TO-126
SOT-223
TO-220
TO-220F/TO-220F1
TO-220F3
Junction to Case
TO-220F2
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
DFN-8(5×6)
UNISONIC TECHNOLOGIES CO., LTD
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SYMBOL
RATINGS
89
150
UNIT
°C/W
°C/W
62.5
°C/W
100
°C/W
75
3.12
14
2.27
°C/W
°C/W
°C/W
°C/W
5.2
°C/W
5.0
°C/W
2.84
°C/W
5.68
°C/W
θJA
θJC
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BVDSS
VGS = 0V, ID = 250μA
600
VDS = 600V, VGS = 0V
Drain-Source Leakage Current
IDSS
VDS = 480V, TC =125°С
Forward
VGS = 30V, VDS = 0V
Gate-Source Leakage Current
IGSS
Reverse
VGS = -30V, VDS = 0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID =1A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS =25V, VGS =0V, f =1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
VDS=50V, VGS=10V,
Gate-Source Charge
QGS
ID=1.3A, ID=100μA (Note 1, 2)
Gate-Drain Charge
QGD
Turn-On Delay Time
tD (ON)
VDD=30V, VGS=10V, ID=0.5A,
Turn-On Rise Time
tR
RG=25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
DRAIN-SOURCE DIODE CHARACTERISTICS
Continuous Drain-Source Current
ISD
Pulsed Drain-Source Current
ISM
Drain-Source Diode Forward Voltage
VSD
ISD=2.0 A, VGS=0 V
Reverse Recovery Time
trr
IS=2.0A, VGS =0 V
dIF/dt=100A/µs (Note1)
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
0.4
V
10
μA
100 μA
100 nA
-100 nA
V/°С
4.0
4.6
V
Ω
300
36
5
pF
pF
pF
19
2.3
2.4
37
24
90
29
nC
nC
nC
ns
ns
ns
ns
2
8
1.4
315
0.75
A
A
V
ns
µC
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2N60-CB
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R209-071.C
2N60-CB

Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
itching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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Time
Unclamped Inductive Switching Waveforms
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2N60-CB

TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
300
Drain Current vs. Gate Threshold Voltage
300
250
250
Drain Current, ID (µA)
Drain Current, ID (µA)
Power MOSFET
200
150
100
200
150
100
50
0
50
0
200
400
600
800
0
0
1000
0.5
1
1.5 2
2.5
3
3.5
4
Gate Threshold Voltage, VTH (V)
Drain Current, ID (A)
Continuous Drain-Source Current, ISD (A)
Drain-Source Breakdown Voltage, BVDSS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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