Datasheet

UNISONIC TECHNOLOGIES CO., LTD
4N65-N
Power MOSFET
4A, 650V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 4N65-N is a high voltage power MOSFET
designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance
and have a high rugged avalanche characteristic. This
power MOSFET is usually used in high speed switching
applications including power supplies, PWM motor controls,
high efficient DC to DC converters and bridge circuits.

FEATURES
* RDS(ON) < 3.1Ω @ VGS = 10 V, ID = 2.2A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness

SYMBOL
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Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R502-965.C
4N65-N

Power MOSFET
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
4N65L-TA3-T
4N65G-TA3-T
TO-220
4N65L-TF1-T
4N65G-TF1-T
TO-220F1
4N65L-TF2-T
4N65G-TF2-T
TO-220F2
4N65L-TF3-T
4N65G-TF3-T
TO-220F3
4N65L-TF3-T
4N65G-TF3-T
TO-220F
4N65L-TM3-T
4N65G-TM3-T
TO-251
4N65L-TMS-T
4N65G-TMS-T
TO-251S
4N65L-TMS2-T
4N65G-TMS2-T
TO-251S2
4N65L-TMS4-T
4N65G-TMS4-T
TO-251S4
4N65L-TN3-R
4N65G-TN3-R
TO-252
4N65L-TND-R
4N65G-TND-R
TO-252D
4N65L-T2Q-T
4N65G-T2Q-T
TO-262
4N65L-TQ2-R
4N65G-TQ2-R
TO-263
4N65L-TQ2-T
4N65G-TQ2-T
TO-263
4N65G-E-K08-5060-R
DFN-8(5×6)
Note: Pin Assignment: G: Gate D: Drain S: Source
1
G
G
G
G
G
G
G
G
G
G
G
G
G
G
S
2
D
D
D
D
D
D
D
D
D
D
D
D
D
D
S
Pin Assignment
3 4 5 6
S - S - S - S - S - S - S - S - S - S - S - S - S - S - S G D D
7
D
8
D
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
Tube
Tape Reel
Tube
Tape Reel
(1) T: Tube, R: Tape Reel
(2) TA3: TO-220, TF1: TO-220F1, TF2: TO-220F2
4N65L-TA3-T
(1)Packing Type
(2)Package Type
(3)Green Package
TF3: TO-220F, TF3T: TO-220F3, TM3: TO-251,
TMS: TO-251S, TMS2: TO-251S2, TN3: TO-252,
TMS4: TO-251S4, TND: TO-252D, T2Q: TO-262,
TQ2: TO-263, K08-5060: DFN-8(5×6)
(3) L: Lead Free, G: Halogen Free and Lead Free

MARKING
PACKAGE
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
MARKING
TO-251S2
TO-251S4
TO-252
TO-252D
TO-262
TO-263
DFN-8(5×6)
UNISONIC TECHNOLOGIES CO., LTD
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4N65-N

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note2)
IAR
4.4
A
4.0
A
Continuous
ID
Drain Current
Pulsed (Note2)
IDM
16
A
260
mJ
Single Pulsed (Note3)
EAS
Avalanche Energy
Repetitive (Note2)
EAR
10.6
mJ
Peak Diode Recovery dv/dt (Note4)
dv/dt
4.5
V/ns
TO-220/TO-262/TO-263
106
W
TO-220F/TO-220F1
35
W
TO-220F3
TO-220F2
36
W
Power Dissipation
PD
TO-251/ TO-251S
TO-251S2/TO-251S4
50
W
TO-252/TO-252D
DFN-8(5×6)
30
W
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
PACKAGE
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-220F2/TO-220F3
TO-251/ TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
DFN-8(5×6)
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-220F3
TO-220F2
TO-251/ TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
DFN-8(5×6)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
RATINGS
UNIT
62.5
°С/W
110
°С/W
75
1.18
°С/W
°С/W
3.5
°С/W
3.4
°С/W
2.5
°С/W
4.17
°С/W
θJA
θJC
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250μA
650
V
Drain-Source Leakage Current
IDSS
VDS = 650 V, VGS = 0 V
10
μA
100
nA
Forward
VGS = 30 V, VDS = 0 V
Gate-Source Leakage Current
IGSS
Reverse
VGS = -30 V, VDS = 0 V
-100 nA
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C
0.6
V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10 V, ID = 2.2A
2.6 3.1
Ω
DYNAMIC CHARACTERISTICS
700 780
pF
Input Capacitance
CISS
VDS = 25 V, VGS = 0V,
Output Capacitance
COSS
100 120
pF
f = 1MHz
Reverse Transfer Capacitance
CRSS
53
60
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
30
70
ns
Turn-On Rise Time
tR
100 140
ns
VDS = 325V, ID = 4.0A,
RG = 25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
150 190
ns
Turn-Off Fall Time
tF
140 180
ns
Total Gate Charge
QG
110 130
nC
VDS= 520V,ID= 4.0A,
Gate-Source Charge
QGS
9
15
nC
VGS= 10V (Note 1, 2)
Gate-Drain Charge
QGD
5
11
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 4.4A
1.4
V
Maximum Continuous Drain-Source
IS
4.4
A
Diode Forward Current
Maximum Pulsed Drain-Source Diode
ISM
17.6
A
Forward Current
250
ns
Reverse Recovery Time
trr
VGS = 0V, IS = 4.4A,
dIF/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
QRR
1.5
μC
Note: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-965.C
4N65-N

Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDD
VGS
RG
D.U.T.
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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Time
Unclamped Inductive Switching Waveforms
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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