Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2N60-CBS
Preliminary
Power MOSFET
1.5A, 600V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 2N60-CBS is a high voltage power MOSFET
and is designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance
and have a high rugged avalanche characteristics. This
power MOSFET is usually used at high speed switching
applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.

FEATURES
* RDS(ON) < 8.5Ω @ VGS = 10V, ID =0.75A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness

SYMBOL
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Copyright © 2016 Unisonic Technologies Co., Ltd
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2N60-CBS

Preliminary
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
2N60G-AA3-R
SOT-223
2N60L-TA3-T
2N60G-TA3-T
TO-220
2N60L-TF3-T
2N60G-TF3-T
TO-220F
2N60L-TF1-T
2N60G-TF1-T
TO-220F1
2N60L-TF2-T
2N60G-TF2-T
TO-220F2
2N60L-TF3T-T
2N60G-TF3T-T
TO-220F3
2N60L-TM3-T
2N60G-TM3-T
TO-251
2N60L-TMS-T
2N60G-TMS-T
TO-251S
2N60L-TMS2-T
2N60G-TMS2-T
TO-251S2
2N60L-TMS4-T
2N60G-TMS4-T
TO-251S4
2N60L-TN3-R
2N60G-TN3-R
TO-252
2N60L-TND-R
2N60G-TND-R
TO-252D
2N60G-K08-5060-R
DFN-8(5×6)
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Power MOSFET
1
G
G
G
G
G
G
G
G
G
G
G
G
S
2
D
D
D
D
D
D
D
D
D
D
D
D
S
Pin Assignment
3 4 5 6 7
S S
S S S S S S S S S S S G D D D
8
D
Packing
Tape Reel
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Tape Reel
Tape Reel
Tape Reel
MARKING
PACKAGE
MARKING
SOT-223
TO-220 / TO-220F
TO-220F1 / TO-220F2
TO-220F3 / TO-251
TO-251S / TO-251S2
TO-251S4 / TO-252
TO-252D
DFN-8(5×6)
UNISONIC TECHNOLOGIES CO., LTD
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
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
0.77
A
Continuous
ID
1.5
A
Drain Current
6
A
Pulsed (Note 2)
IDM
Single Pulsed (Note 3)
EAS
20
mJ
Avalanche Energy
27
mJ
Repetitive (Note 2)
EAR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.0
V/ns
SOT-223
1
W
TO-220
54
W
TO-220F/TO-220F1
23
W
TO-220F3
Power Dissipation
PD
TO-220F2
24
W
TO-251/TO-251S
TO-251S2/TO-251S4
44
W
TO-252/TO-252D
DFN-8(5×6)
22
W
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L=10mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤2.0A, di/dt≤100A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
SOT-223
TO-220/TO-220F
TO-220F1/ TO-220F2
TO-220F3
Junction to Ambient
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
DFN-8(5×6)
SOT-223
TO-220
TO-220F/TO-220F1
TO-220F3
Junction to Case
TO-220F2
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
DFN-8(5×6)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
RATINGS
150
UNIT
°C/W
62.5
°C/W
100
°C/W
75
14
2.32
°C/W
°C/W
°C/W
5.4
°C/W
5.3
°C/W
2.87
°C/W
5.6
°C/W
θJA
θJC
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Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
BVDSS
Drain-Source Leakage Current
Gate-Source Leakage Current
IDSS
Forward
Reverse
IGSS
TEST CONDITIONS
VGS = 0V, ID = 250μA
VDS = 600V, VGS = 0V
VDS = 480V, TC =125°С
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID =0.75A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS =25V, VGS =0V,
Output Capacitance
COSS
f =1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
VDS=50V, VGS=1.0V,
Gate-Source Charge
QGS
ID=1.3A (Note 1, 2)
Gate-Drain Charge
QGD
Turn-On Delay Time
tD (ON)
Turn-On Rise Time
tR
VDD =30V, ID =0.5A,
RG=25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
DRAIN-SOURCE DIODE CHARACTERISTICS
Continuous Drain-Source Current
ISD
Pulsed Drain-Source Current
ISM
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, ISD = 1.5 A
Body Diode Reverse Recovery Time
trr
IF=1.5A,VDD=100V,
dI/dt=100A/µs
Body Diode Reverse Recovery Charge
Qrr
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
600
2.0
10
100
100
-100
V
μA
μA
nA
nA
4.0
8.5
V
Ω
130
21
3.4
pF
pF
pF
14
1.5
1.2
26
20
50
23
nC
nC
nC
ns
ns
ns
ns
1.5
6
1.4
370
656
A
A
V
ns
nC
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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2N60-CBS

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
itching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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Time
Unclamped Inductive Switching Waveforms
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2N60-CBS
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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