Datasheet

UNISONIC TECHNOLOGIES CO., LTD
6N65
Power MOSFET
6.2A, 650V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 6N65 is a high voltage power MOSFET designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and high rugged avalanche
characteristics. This power MOSFET is usually used in high speed
switching applications of switching power supplies and adaptors.

FEATURES
* RDS(ON) < 1.7Ω @VGS = 10V
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness

SYMBOL

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
6N65L-TA3-T
6N65G-TA3-T
TO-220
6N65L-TF3-T
6N65G-TF3-T
TO-220F
6N65L-TF1-T
6N65G-TF1-T
TO-220F1
6N65L-TF2-T
6N65G-TF2-T
TO-220F2
6N65L-TF3T-T
6N65G-TF3T-T
TO-220F3
6N65L-TM3-T
6N65G-TM3-T
TO-251
6N65L-TMS-T
6N65G-TMS-T
TO-251S
6N65L-TN3-T
6N65G-TN3-T
TO-252
6N65L-TN3-R
6N65G-TN3-R
TO-252
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2014 Unisonic Technologies Co., Ltd
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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QW-R502-589. H
6N65
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Power MOSFET
MARKING INFORMATION
PACKAGE
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-252
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MARKING
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Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
6.2
A
Continuous Drain Current
ID
6.2
A
Pulsed Drain Current (Note 2)
IDM
24.8
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
440
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
ns
TO-220
125
W
TO-220F/TO-220F1
40
W
TO-220F3
Power Dissipation
PD
TO-220F2
42
W
TO-251/TO-251S
55
W
TO-252
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L = 24mH, IAS = 6A, VDD = 90V, RG = 25 Ω, Starting TJ = 25°C
4. ISD ≤ 6.2A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
TO-220F3
Junction to Ambient
TO-251/TO-251S
TO-252
TO-220
TO-220F/TO-220F1
TO-220F3
Junction to Case
TO-220F2
TO-251/TO-251S
TO-252
SYMBOL
UNISONIC TECHNOLOGIES CO., LTD
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RATING
UNIT
62.5
θJA
°C/W
110
1.0
3.2
θJC
2.97
°C/W
2.27
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BVDSS
IDSS
VGS = 0V, ID = 250μA
650
V
VDS = 650V, VGS = 0V
10
μA
100 nA
Forward
VGS = 30V, VDS = 0V
Gate- Source Leakage Current
IGSS
Reverse
VGS = -30V, VDS = 0V
-100 nA
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C
0.53
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 3.1A
1.1 1.7
Ω
DYNAMIC CHARACTERISTICS
950 1200 pF
Input Capacitance
CISS
VDS=25V, VGS=0V,
Output Capacitance
COSS
95 120 pF
f=1.0 MHz
Reverse Transfer Capacitance
CRSS
18
25
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
45
60
ns
Turn-On Rise Time
tR
100 130 ns
VDD=325V, ID =6.2A,
RG =25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
300 400 ns
Turn-Off Fall Time
tF
220 270 ns
Total Gate Charge
QG
180 200 nC
VDS=520V, ID=6.2A,
Gate-Source Charge
QGS
8
nC
VGS=10V (Note 1, 2)
Gate-Drain Charge
QGD
20
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 6.2 A
1.4
V
Maximum Continuous Drain-Source Diode
IS
6.2
A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
24.8 A
Forward Current
290
ns
Reverse Recovery Time
tRR
VGS = 0 V, IS = 6.2 A,
dIF/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
QRR
2.35
μC
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Drain Current, ID (A)
TYPICAL CHARACTERISTICS
Drain Current,ID (µA)
Drain Current,ID (µA)
Drain Current,ID (A)

Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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