UNISONIC TECHNOLOGIES CO., LTD UBSS83 Preliminary POWER MOSFET MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTOR DESCRIPTION The UTC UBSS83 is a MOSFET N-channel enhancement switching transistor, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, etc. The UTC UBSS83 is suitable for analog and/or digital switch and switch driver. FEATURES * Low ON resistance * Low capacitances SYMBOL ORDERING INFORMATION Ordering Number UBSS83G-AD4-R Note: Pin Assignment: G: Gate D: Drain Package S: Source SOT-143 B: Substrate (b) 1 B Pin Assignment 2 3 4 S D G Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R209-050.a UBSS83 Preliminary POWER MOSFET ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 10 V Source-Drain Voltage VSD 10 V Drain-Substrate Voltage VDB 15 V Source-Substrate Voltage VSB 15 V Drain Current (DC) ID 50 mA Power Dissipation (TA=25°C) PTOT 230 mW Junction Temperature TJ 125 °C Storage Temperature Range TSTG -65~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient in Free Air θJA Note: Device mounted on a ceramic substrate of 8mm×10mm×0.7mm. VALUE 430 UNIT K/W ELECTRICAL CHARACTERISTICS (TAMB=25°C, unless otherwise specified) PARAMETER Drain-Source Breakdown Voltage Source-Drain Breakdown Voltage Drain-Substrate Breakdown Voltage Source-Substrate Breakdown Voltage Drain-Source Leakage Current Source-Drain Leakage Current Gate-Source Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Gate-Substrate Zener Voltages Input Capacitance Output Capacitance Feed-Back Capacitance Switching Times SYMBOL BVDSX BVSDX BVDBO BVSBO IDSoff ISDoff VGS(TH) RDS(ON) gFS VZ(1) VZ(2) CISS COSS CRSS tON tOFF TEST CONDITIONS ID=10nA, VGS=VBS=-5V VGD=VBD=-5V, ID=10nA VGB=0, ID=10nA, Open Source VGB=0, ID=10nA, Open Drain VGS=VBS=-2V, VDS=6.6V VGD=VBD=-2V, VSD=6.6V VDS=VGS, VSB=0, ID=1µA VGS=5V, ID=0.1mA, VSB=0 VGS=10V, ID=0.1mA, VSB=0 VGS=3.2V, ID=0.1mA, VSB=6.8V VDS=10V, VSB=0, ID=20mA, f=1kHz VDB=VSB=0, -IG=10µA VDB=VSB=0, +IG=10µA VGS=VBS=-15V, VDS=10V, f=1MHz VDD=10V,Vi=5V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 10 V 10 V 15 V 15 V 10 nA 10 nA 0.1 2.0 V 70 Ω 45 Ω 80 120 Ω 10 15 mS 12.5 V 12.5 V 1.5 pF 1.0 pF 0.6 pF 1.0 ns 5.0 ns 2 of 3 QW-R209-050.a UBSS83 Preliminary POWER MOSFET TEST CIRCUITS AND WAVEFORMS VDD 50Ω OUTPUT 0.1µF 90% VO 630Ω T.U.T Vi 10% 50Ω INPUT tR tON tF tOFF Switching Times Test Circuit and Input and Output Waveforms. UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R209-050.a