DISCRETE SEMICONDUCTORS DATA SHEET BSD22 MOSFET N-channel depletion switching transistor Product specification File under Discrete Semiconductors, SC07 December 1997 Philips Semiconductors Product specification MOSFET N-channel depletion switching transistor DESCRIPTION BSD22 Marking code: M32 Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type.The transistor is sealed in a SOT143 envelope and features a low ON-resistance and low capacitances.The transistor is protected against excessive input voltages by integrated back-to-back diodes between gate and substrate. handbook, halfpage 4 3 d b g s Applications: • analog and/or digital switch 1 2 • switch driver Top view MAM389 • convertor • chopper PINNING 1 = substrate (b) 2 = source 3 = drain 4 = gate Fig.1 Simplified outline and symbol. Note 1. Drain and source are interchangeable QUICK REFERENCE DATA Drain-source voltage VDS max. 20 V + 15 V − 40 V VGS max. Drain current (DC) ID max. 50 mA Total power dissipation up to Tamb = 25 °C Ptot max. 230 mW Junction temperature Tj max. 125 °C RDSon max. 30 Ω Crss typ. Gate-source voltage Drain-source ON-resistance VGS = 10 V; VSB = 0; ID = 1 mA Feed-back capacitance VGS = VBS = −5 V; VDS = 10 V; f = 1 MHz December 1997 2 0.6 pF Philips Semiconductors Product specification MOSFET N-channel depletion switching transistor BSD22 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage VDS max. 20 V Source-drain voltage VSD max. 20 V Drain-substrate voltage VDB max. 25 V Source-substrate voltage VSB max. 25 V Gate-substrate voltage VGB max. ± 15 V Gate-source voltage VGS max. + 15 V − 40 V ID max. Ptot max. Drain current (DC) Total power dissipation up to Tamb = 25 °C(1) Storage temperature range Tstg Junction temperature Tj Rth j-a 50 230 mA mW −65 to + 150 °C max. 125 °C = 430 K/W THERMAL RESISTANCE From junction to ambient in free air(1) Note 1. Device mounted on a ceramic subtrate of 8 mm × 10 mm × 0.7 mm. CHARACTERISTICS Tamb = 25 °C unless otherwise specified Drain-source breakdown voltage VGS = VBS = −5 V; IS = 10 nA V(BR)DSX min. 20 V V(BR)SDX min. 20 V V(BR)DBO min. 25 V V(BR)SBO min. 25 V IDSoff typ. 1.0 nA ISDoff typ. 1.0 nA IGBS max. 10 nA min. 10 mS typ. 15 mS max. 2.0 V Source-drain breakdown voltage VGD = VBD = −5 V; ID = 10 nA Drain-substrate breakdown voltage VGB = 0; ID = 10 nA; open source Source-substrate breakdown voltage VGB = 0; IS = 10 nA; open drain Drain-source leakage current VGS = VBS = −5 V; VDS = 10 V Source-drain leakage current VGD = VBD = 5 V; VSD = 10 V Gate-substrate leakage current VDB = VSB = 0; VGB = ± 15 V Forward transconductance at f = 1 kHz VDS = 10 V; VSB = 0; ID = 20 mA gfs Gate-source cut-off voltage VDS = 10 V; VSB = 0; ID = 10 µA December 1997 −V(P)GS 3 Philips Semiconductors Product specification MOSFET N-channel depletion switching transistor BSD22 Drain-source ON-resistance ID = 1 mA; VSB = 0; VGS = 5 V RDSon typ. max. 25 50 Ω Ω VGS = 10 V RDSon typ. max. 15 30 Ω Ω Capacitances at f = 1 MHz VGS = VBS = −5 V; VDS = 10 V Feed-back capacitance Crss typ. 0.6 pF Input capacitance Ciss typ. 1.5 pF Output capacitance Coss typ. 1.0 pF ton typ. 1.0 ns toff typ. 5.0 ns Switching times (see Fig.3) VDD = 10 V; Vi = −5 V to + 5 V Cgd handbook, halfpage Cbd Ciss = Cgs + Cgd + Cgb Cbs g Coss = Cgd + Cbd Cgb Crss Cgs = Cgd d b s MBK301 Fig.2 Capacitances model. VDD 50 Ω 0.1 µF Vo 90% 90% handbook, full pagewidth age INPUT 630 Ω 10% 10% tr ton T.U.T Vi tf toff 90% 90% 50 Ω OUTPUT MBK300 10% 10% MBK296 Fig.3 Switching times and input and output waveforms; Ri = 50 Ω; tr < 0.5 ns; tf < 1.0 ns; tp = 20 ns; δ < 0.01. December 1997 4 Philips Semiconductors Product specification MOSFET N-channel depletion switching transistor BSD22 PACKAGE OUTLINE Plastic surface mounted package; 4 leads SOT143B D B E A X y HE v M A e bp w M B 4 3 Q A A1 c 1 2 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT143B December 1997 EUROPEAN PROJECTION 5 Philips Semiconductors Product specification MOSFET N-channel depletion switching transistor BSD22 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1997 6