KSMD4P40 / KSMU4P40 400V P-Channel MOSFET TO-252 Features • • • • • • TO-251 -2.7A, -400V, RDS(on) = 3.1Ω @VGS = -10 V Low gate charge ( typical 18 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description S These P-Channel enhancement mode power field effect transistors are produced using Kersemi proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast based on complimentary half bridge. Absolute Maximum Ratings Symbol VDSS ID ! G! ▶ ▲ ● ! D TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current KSMD4P40 / KSMU4P40 -400 - Continuous (TC = 100°C) IDM Drain Current VGSS Gate-Source Voltage ● ● - Pulsed (Note 1) Units V -2.7 A -1.71 A -10.8 A ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 260 mJ IAR Avalanche Current (Note 1) -2.7 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * (Note 1) 5.0 -4.5 2.5 mJ V/ns W 50 0.4 -55 to +150 W W/°C °C 300 °C dv/dt PD (Note 3) Power Dissipation (TC = 25°C) TJ, TSTG TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case Typ -- Max 2.5 Units °C/W RθJA Thermal Resistance, Junction-to-Ambient * -- 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 110 °C/W * When mounted on the minimum pad size recommended (PCB Mount) 2014-7-13 1 www.kersemi.com KSMD4P40 / KSMU4P40 Elerical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units -400 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C -- 0.36 -- V/°C VDS = -400 V, VGS = 0 V -- -- -1 µA VDS = -320 V, TC = 125°C µA IDSS Zero Gate Voltage Drain Current -- -- -10 IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -3.0 -- -5.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -1.35 A -- 2.44 3.1 Ω gFS Forward Transconductance VDS = -50 V, ID = -1.35 A -- 2.5 -- S -- 520 680 pF -- 80 105 pF -- 11 15 pF -- 13 35 ns (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -200 V, ID = -3.5 A, RG = 25 Ω (Note 4, 5) VDS = -320 V, ID = -3.5 A, VGS = -10 V (Note 4, 5) -- 55 120 ns -- 35 80 ns -- 37 85 ns -- 18 23 nC -- 3.8 -- nC -- 9.4 -- nC A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -2.7 ISM Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -2.7 A Drain-Source Diode Forward Voltage -- -- -10.8 A VSD -- -- -5.0 V trr Reverse Recovery Time -- 260 -- ns Qrr Reverse Recovery Charge -- 1.4 -- µC VGS = 0 V, IS = -3.5 A, dIF / dt = 100 A/µs (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 62mH, IAS = -2.7A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -3.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature 2014-7-13 2 www.kersemi.com KSMD4P40 / KSMU4P40 Typical Characteristics 1 1 10 10 VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -6.0 V Bottom : -5.5 V -I D, Drain Current [A] 0 10 -I D , Drain Current [A] Top : -1 10 ※ Notes : 1. 250μs Pulse Test 2. TC = 25℃ -2 10 0 10 150℃ 25℃ -55℃ -1 -1 0 10 10 1 10 2 10 4 Figure 1. On-Region Characteristics 10 1 10 VGS = - 10V 6 -I DR , Reverse Drain Current [A] RDS(on) [ Ω ], Drain-Source On-Resistance 8 Figure 2. Transfer Characteristics 8 VGS = - 20V 4 2 ※ Note : TJ = 25℃ 0 0 10 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250μs Pulse Test -1 0 3 6 9 10 12 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -ID , Drain Current [A] -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 1200 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 -V GS , Gate-Source Voltage [V] 1000 800 Capacitance [pF] 6 -VGS , Gate-Source Voltage [V] -VDS, Drain-Source Voltage [V] Ciss 600 Coss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 400 Crss 200 0 -1 10 VDS = -80V VDS = -200V 8 VDS = -320V 6 4 2 ※ Note : ID = -3.5 A 0 0 10 0 1 10 2 4 6 8 10 12 14 16 18 20 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics 2014-7-13 ※ Notes : 1. VDS = -50V 2. 250μs Pulse Test Figure 6. Gate Charge Characteristics 3 www.kersemi.com KSMD4P40 / KSMU4P40 Typical Characteristics 2.5 1.2 2.0 1.1 RDS(ON) , (Normalized) Drain-Source On-Resistance -BV DSS , (Normalized) Drain-Source Breakdown Voltage (Continued) 1.0 ※ Notes : 1. VGS = 0 V 2. ID = -250 μA 0.9 0.8 -100 -50 0 50 100 150 1.5 1.0 ※ Notes : 1. VGS = -10 V 2. ID = -1.75 A 0.5 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 Operation in This Area is Limited by R DS(on) 2.5 1 10 -I D, Drain Current [A] -I D, Drain Current [A] 100 µs 1 ms 10 ms 0 DC 10 -1 10 ※ Notes : o 1. TC = 25 C 2.0 1.5 1.0 0.5 o 2. TJ = 150 C 3. Single Pulse -2 0.0 25 10 0 1 10 2 10 3 10 10 50 100 125 150 Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 0 ※ N o te s : 1 . Z θ J C ( t ) = 2 . 5 ℃ /W M a x . 2 . D u ty F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C( t ) 0 .2 0 .1 0 .0 5 10 -1 0 .0 2 0 .0 1 θ JC ( t) , T h e r m a l R e s p o n s e Figure 9. Maximum Safe Operating Area 10 75 TC, Case Temperature [℃] -VDS, Drain-Source Voltage [V] PDM t1 s in g le p u ls e Z t2 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve 2014-7-13 4 www.kersemi.com KSMD4P40 / KSMU4P40 Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 200nF 12V -10V 300nF VDS VGS Qgs Qgd DUT -3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL t on td(on) VDD VGS VGS RG t off tr td(off) tf 10% DUT -10V VDS 90% Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS tp ID RG VDD DUT -10V VDS (t) ID (t) IAS BVDSS tp 2014-7-13 VDD Time 5 www.kersemi.com KSMD4P40 / KSMU4P40 Peak Diode Recovery dv/dt Test Circuit & Waveforms + VDS DUT _ I SD L Driver RG VGS VGS ( Driver ) Compliment of DUT (N-Channel) VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V Body Diode Reverse Current I SD ( DUT ) IRM di/dt IFM , Body Diode Forward Current VDS ( DUT ) VSD Body Diode Forward Voltage Drop VDD Body Diode Recovery dv/dt 2014-7-13 6 www.kersemi.com KSMD4P40 / KSMU4P40 Package Dimensions DPAK MIN0.55 0.91 ±0.10 9.50 ±0.30 0.50 ±0.10 0.76 ±0.10 0.50 ±0.10 1.02 ±0.20 2.30TYP [2.30±0.20] (1.00) (3.05) (2XR0.25) (0.10) 2.70 ±0.20 6.10 ±0.20 9.50 ±0.30 6.60 ±0.20 (5.34) (5.04) (1.50) (0.90) 2.30 ±0.20 (0.70) 2.30TYP [2.30±0.20] (0.50) 2.30 ±0.10 0.89 ±0.10 MAX0.96 (4.34) 2.70 ±0.20 0.80 ±0.20 0.60 ±0.20 (0.50) 6.10 ±0.20 5.34 ±0.30 0.70 ±0.20 6.60 ±0.20 0.76 ±0.10 2014-7-13 8 www.kersemi.com KSMD4P40 / KSMU4P40 Package Dimensions (Continued) IPAK 2.30 ±0.20 6.60 ±0.20 5.34 ±0.20 0.76 ±0.10 2.30TYP [2.30±0.20] 0.50 ±0.10 16.10 ±0.30 6.10 ±0.20 0.70 ±0.20 (0.50) 9.30 ±0.30 MAX0.96 (4.34) 1.80 ±0.20 0.80 ±0.10 0.60 ±0.20 (0.50) 2.30TYP [2.30±0.20] 0.50 ±0.10