UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT140N10H Power MOSFET 140A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT140N10H is a N-channel power mosfet, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. The UTC UTT140N10H is suitable for hard switched and high frequency circuits, etc. FEATURES *, RDS(ON)<7.0mΩ @ VGS=10V, ID=75A * High switching speed SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT140N10HL-TA3-T UTT140N10HG-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R205-079.b UTT140N10H Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Continuous TC=25°C 140 (Note 1) A ID Drain Current VGS@10V 97 (Note 1) A TC=100°C 550 A Pulsed (Note 2) IDM Single Pulse Avalanche Energy (Note 3) EAS 980 mJ Power Dissipation TC=25°C PD 330 W Peak Diode Recovery (Note 4) dv/dt 14 V/ns Junction Temperature TJ -55~+175 °C Storage Temperature Range TSTG -55~+175 °C Linear Derating Factor 2.2 W/°C Soldering Temperature, for 10 seconds 300 °C (1.6mm From Case) Mounting torque, 6-32 or M3 srew 10 lb·in (1.1N·m) Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive rating; pulse width limited by max. junction temperature. 3. Limited by TJmax, starting TJ=25°C, L=0.35mH, RG=25Ω, IAS=75A, VGS=10V. Part not recommended for use above this value. 4. ISD ≤ 75A, di/dt ≤ 550A/µs, VDD ≤ V(BR)DSS, TJ ≤ 75°C THERMAL RESISTANCES CHARACTERISTICS PARAMETER SYMBOL Junction to Ambient θJA Junction-to-Case θJC Note: When mounted on 1" square PCB (FR-4 or G-10 Material). RATINGS 62 0.45 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse Gate Resistance ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance SYMBOL V(BR)DSS VGS=0V, ID=250µA Reference to 25°C, ID=1mA ∆V(BR)DSS/∆TJ (Note 2) VDS=100V,VGS=0V IDSS VDS=100V, VGS=0V, TJ=125°C VGS=+20V IGSS VGS=-20V RG f=1.0MHz, open drain VGS(TH) RDS(ON) gFS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS VDS =VGS, ID=250µA VGS=10V, ID=75A (Note 3) VDS=50V, ID =75A MIN TYP MAX 100 V 0.064 V/°C 20 250 200 -200 µA µA nA nA Ω 4.0 7.0 V mΩ S 1.4 2.0 5.6 160 UNIT 2 of 6 QW-R205-079.b UTT140N10H Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS DYNAMIC PARAMETERS Input Capacitance CISS VDS=50V, VGS=0 V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS Effective Output Capacitance (Energy COSS eff (ER) Related) (Note 5) VDS=0~80V,VGS=0V, Effective Output Capacitance (Time COSS eff. (TR) Related) (Note 4) SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=80V, ID=75A, Gate Source Charge QGS (Note 3) Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=65V, RG=2.6Ω, ID=75A, VGS=10V Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous MOSFET symbol showing the IS Current integral reverse p-n-junction diode Drain-Source Diode Forward Voltage (Note 2, 5) ISM Drain-Source Diode Forward Voltage VSD MIN TYP MAX UNIT 7670 540 280 pF pF pF 650 pF 720.1 pF 170 46 62 26 110 68 78 250 140 (Note 1) nC nC nC ns ns ns ns A 550 IS=75A, VGS=0V, TJ=25°C (Note 3) 1.3 V TJ=25°C 45 68 IF=75A, ns dI/dt=100A/µs 55 83 TJ=125°C VR=85V TJ=25°C 82 120 nC Body Diode Reverse Recovery Charge QRR (Note 3) 120 180 TJ=125°C Reverse Recovery Current IRRM TJ=25°C 3.3 A Intrinsic turn-on time is negligible (turn-on is dominated by Forward Turn-On Time tON LS+LD) Notes: 1. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. 2. Repetitive rating; pulse width limited by max. junction temperature. 3. Pulse width≤400µs; duty cycle ≤ 2%. 4. COSS eff. (TR) is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0~ 80% VDSS. 5. COSS eff. (ER) is a fixed capacitance that gives the same energy as COSS while VDS is rising from 0~80% VDSS. 6. When mounted on 1" square PCB (FR-4 or G-10 Material). Body Diode Reverse Recovery Time tRR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R205-079.b UTT140N10H Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS RG 90% RD VGS VDS 10V 10% DUT VGS td(ON) tON Resistive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw tR td(OFF) tF tOFF Resistive Switching Waveforms 4 of 6 QW-R205-079.b UTT140N10H Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R205-079.b UTT140N10H Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R205-079.b