UNISONIC TECHNOLOGIES CO., LTD Preliminary UFS4310H Power MOSFET 140A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UFS4310H is a N-CHANNEL power mosfet, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. The UTC UFS4310H is suitable for hard switched and high frequency circuits, etc. FEATURES *, RDS(ON)<7.0mΩ @ VGS=10V, ID=75A * High switching speed SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UFS4310HL-TA3-T UFS4310HG-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 6 QW-R205-073.c UFS4310H Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT 100 V ±20 V TC=25°C 140 (Note 1) Continuous A ID Drain Current VGS@10V TC=70°C 97 (Note 1) 550 A Pulsed (Note 2) IDM Single Pulse Avalanche Energy (Note 3) EAS 500 mJ Power Dissipation TC=25°C PD 330 W Peak Diode Recovery (Note 4) dv/dt 4.6 V/ns Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55 ~ +175 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive rating; pulse width limited by max. junction temperature. 3. Limited by TJmax, starting TJ=25°C, L=0.17mH, RG=25Ω, IAS=75A, VGS=10V. Part not recommended for use above this value. 4. ISD ≤ 75A, di/dt ≤ 550A/µs, VDD ≤ V(BR)DSS, TJ ≤ 75°C SYMBOL VDSS VGSS THERMAL DATA PARAMETER Junction to Ambient Junction to Case Note: Rθ is measured at TJ approximately 90°C UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62.5 0.38 UNIT °C/W °C/W 2 of 6 QW-R205-073.c UFS4310H Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse SYMBOL V(BR)DSS TEST CONDITIONS VGS=0V, ID=250µA Reference to 25°C, ID=1mA ∆V(BR)DSS/∆TJ (Note 2) VDS=100V,VGS=0V IDSS VDS=100V, VGS=0V, TJ=125°C VGS=+20V IGSS VGS=-20V RG f=1.0MHz, open drain MIN TYP MAX UNIT 100 V 0.064 V/°C 20 250 200 -200 µA µA nA nA Ω Gate Resistance 1.9 ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS =VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=75A (Note 3) 5.9 7.0 mΩ DYNAMIC PARAMETERS Input Capacitance CISS 7200 pF VDS=50V, VGS=0 V, f=1.0MHz Output Capacitance COSS 675 pF Reverse Transfer Capacitance CRSS 210 pF SWITCHING PARAMETERS Total Gate Charge QG 170 250 nC VGS=10V, VDS=80V, ID=75A, Gate Source Charge QGS 46 nC (Note 3) 62 nC Gate Drain Charge QGD Turn-ON Delay Time tD(ON) 330 ns VDD=30V, RG=25Ω, ID=0.5A, Turn-ON Rise Time tR 180 ns V =10V Turn-OFF Delay Time tD(OFF) 520 ns GS Turn-OFF Fall-Time tF 140 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous 140 IS A Current (Note 1) Drain-Source Diode Forward Voltage ISM 550 (Note 2) IS=75A, VGS=0V, TJ=25°C 1.3 V Drain-Source Diode Forward Voltage VSD (Note 3) Reverse Recovery Time (Note 1) trr IS=75A, VGS=0V, 120 ns dIF/dt=100A/µs Reverse Recovery Charge (Note 1) Qrr 200 nC Notes: 1. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. 2. Repetitive rating; pulse width limited by max. junction temperature. 3. Pulse width ≤ 400µs; duty cycle ≤ 2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R205-073.c UFS4310H Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT Charge Gate Charge Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Gate Charge Waveforms 4 of 6 QW-R205-073.c UFS4310H Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R205-073.c UFS4310H Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R205-073.c