IRF IRF7316QPBF

PD - 96126
IRF7316QPbF
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HEXFET® Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
Dual P- Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Automotive [Q101] Qualified
Lead-Free
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
VDSS = -30V
RDS(on) = 0.058Ω
Top View
Description
Specifically designed for Automotive applications, these
HEXFET® Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a
150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and
a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current…
TA = 25°C
TA = 70°C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
TA = 25°C
Maximum Power Dissipation …
TA = 70°C
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Junction and Storage Temperature Range
Symbol
Maximum
VDS
V GS
-30
± 20
-4.9
-3.9
-30
-2.5
2.0
1.3
140
-2.8
0.20
-5.0
-55 to + 150
ID
IDM
IS
PD
EAS
IAR
EAR
dv/dt
TJ, TSTG
Units
V
A
W
mJ
A
mJ
V/ ns
°C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient…
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Symbol
Limit
Units
RθJA
62.5
°C/W
1
08/29/07
IRF7316QPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
I GSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-30
–––
–––
–––
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V GS = 0V, ID = -250µA
0.022 ––– V/°C Reference to 25°C, ID = -1mA
0.042 0.058
V GS = -10V, ID = -4.9A „
Ω
0.076 0.098
V GS = -4.5V, ID = -3.6A „
––– –––
V
V DS = V GS, ID = -250µA
7.7 –––
S
V DS = -15V, I D = -4.9A
––– -1.0
V DS = -24V, VGS = 0V
µA
––– -25
V DS = -24V, VGS = 0V, TJ = 55°C
––– 100
V GS = -20V
nA
––– -100
V GS = 20V
23
34
I D = -4.9A
3.8 5.7
nC V DS = -15V
5.9 8.9
V GS = -10V, See Fig. 10 „
13
19
V DD = -15V
13
20
I D = -1.0A
ns
34
51
R G = 6.0Ω
32
48
R D = 15Ω „
710 –––
V GS = 0V
380 –––
pF
V DS = -25V
180 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
I SM
V SD
t rr
Q rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
-2.5
–––
–––
-30
A
––– -0.78 -1.0
––– 44
66
––– 42
63
V
ns
nC
Conditions
D
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = -1.7A, VGS = 0V ƒ
TJ = 25°C, IF = -1.7A
di/dt = 100A/µs ƒ
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 35mH
RG = 25Ω, IAS = -2.8A.
… Surface mounted on FR-4 board, t ≤ 10sec.
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ƒ ISD ≤ -2.8A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
IRF7316QPbF
100
100
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
10
-3.0V
20µs PULSE WIDTH
TJ = 25°C
A
1
0.1
1
10
-3.0V
20µs PULSE WIDTH
TJ = 150°C
A
1
10
0.1
-VDS, Drain-to-Source Voltage (V)
1
10
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
100
-ISD , Reverse Drain Current (A)
-I D , Drain-to-Source Current (A)
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
TJ = 25°C
TJ = 150°C
10
V DS = -10V
20µs PULSE WIDTH
1
3.0
3.5
4.0
4.5
5.0
5.5
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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6.0
A
TJ = 150°C
10
TJ = 25°C
VGS = 0V
1
0.4
0.6
0.8
1.0
1.2
A
1.4
-VSD , Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
3
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
RDS (on) , Drain-to-Source On Resistance (Ω)
IRF7316QPbF
-4.9A
ID =-4.9A
1.5
1.0
0.5
0.0
-60 -40 -20
-10V
VGS =-10V
0
20
40
60
0.6
0.5
0.4
0.3
0.1
VGS = -10V
0.0
80 100 120 140 160
0
TJ , Junction Temperature ( °C)
10
20
300
I D = -4.9A
0.04
0.00
3
6
9
12
-VGS , Gate -to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
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15
A
EAS , Single Pulse Avalanche Energy (mJ)
0.12
0
A
Fig 6. Typical On-Resistance Vs. Drain
Current
0.16
0.08
30
-I D , Drain Current (A)
Fig 5. Normalized On-Resistance
Vs. Temperature
RDS (on) , Drain-to-Source On Resistance (Ω)
V GS = -4.5V
0.2
ID
-1.3A
-2.2A
BOTTOM -2.8A
TOP
250
200
150
100
50
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
150
4
IRF7316QPbF
VGS = 0V
C, Capacitance (pF)
1200
20
f = 1 MHz
Ciss = Cgs + Cgd + Cds
Crss = Cgd
Coss = Cds + Cgd
1000
Ciss
800
Coss
600
400
Crss
200
0
1
ID = -4.9A
SHORTED
-VGS , Gate-to-Source Voltage (V)
1400
10
100
A
VDS =-15V
16
12
8
4
0
0
10
20
30
40
QG , Total Gate Charge (nC)
- V DS , Drain-to-Source Voltage (V)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Thermal Response (Z thJA )
100
0.50
0.20
10
0.10
0.05
0.02
1
P DM
0.01
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7316QPbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
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SO-8 Part Marking
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Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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6
IRF7316QPbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/2007
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7