Application Note AN 2013-09 V1.1 September 2013 High Power Solutions with TO-Leadless IFAT PMM APS SE DC Ralf Walter Evaluation Board Application Note High Power Solutions with TO-Leadless Application Note AN 2013-09 V1.1 September 2013 Edition 2011-02-02 Published by Infineon Technologies Austria AG 9500 Villach, Austria © Infineon Technologies Austria AG 2011. All Rights Reserved. Attention please! THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE REGARDED AS ANY DESCRIPTION OR WARRANTY OF A CERTAIN FUNCTIONALITY, CONDITION OR QUALITY OF THE INFINEON TECHNOLOGIES COMPONENT. THE RECIPIENT OF THIS APPLICATION NOTE MUST VERIFY ANY FUNCTION DESCRIBED HEREIN IN THE REAL APPLICATION. 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Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. AN 2013-09 Revision History: 13-09-02, V1.1 Previous Version: 13-05-01, V1.0 Subjects: TO-Leadless: High Power Solutions with TO-Leadless Authors: Ralf Walter, IFAT PMM APS SE DC We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [[email protected]] 2 Evaluation Board Application Note High Power Solutions with TO-Leadless Application Note AN 2013-09 V1.1 September 2013 Table of contents 1 Introduction .................................................................................................................................................. 4 2 Board description ........................................................................................................................................ 4 2.1 Setup .................................................................................................................................................. 4 2.2 Mechanical details ............................................................................................................................. 4 2.3 PCB .................................................................................................................................................... 5 2.4 Position of assembled parts ............................................................................................................... 6 2.5 Copper ............................................................................................................................................... 7 2.6 Schematic .......................................................................................................................................... 8 2.7 Signals ............................................................................................................................................... 9 3 Bill of Material ............................................................................................................................................10 3.1 24V/36V version with 60V IPT007N06N ..........................................................................................10 3.2 48V version with 100V IPT020N10N ...............................................................................................10 4 Datasheets..................................................................................................................................................11 4.1 IPT007N06N ....................................................................................................................................11 4.2 IPT020N10N ....................................................................................................................................13 3 Evaluation Board Application Note High Power Solutions with TO-Leadless 1 Application Note AN 2013-09 V1.1 September 2013 Introduction Handling high power in a drives application demands an optimized thermal management combined with high-performance MOSFETs. Modern silicon packaged into the new TO-Leadless allows the designer to reach a higher motor power without the need of excessive parallelization. Infineon offers with these demoboards a solution for applications like Light Electric Vehicles (µCars, forklifts, E-Scooters) a power platform for first evaluations. Depending on the overall heat sinking system the Power Boards easily can handle 5kW and more, allowing investigations regarding switching and temperature behavior. The TO-Leadless (P/PG-HSOF-8-1) is a molded package optimized for high power and high reliability applications. It´s small mechanical dimensions allows compact designs and the high current capability combined with the low thermal resistance (Rth(j-c)), resulting in lower chip temperatures, enable the designer to go for higher power density and higher reliability. All mechanical details shown in the following chapters and additionally a general recommendation how to handle Infineon´s SMD devices could be found at www.infineon.com/packages. Detailed mechanical information about the TO-Leadless (P/PG-HSOF-8-1) is available at TO-Leadless. General information like datasheets, product brief etc. are available under www.infineon.com/toll. 2 Board description 2.1 Setup The board offers all necessary power parts to handle several kilowatts. Depending on thermal management and electrical environment much more than 5kW of motor power are possible. The board contains 3 halfbridges with 5 MOSFETs in parallel per switch. All power paths offer the possibility to connect wires via bolts or screws. Three connectors, each for PLUS and MINUS have to be wired together externally (dotted lines in Figure 2.3). A well suited electrolytic capacitor bank (Low ESR) has to be connected as close as possible to the connectors for PLUS and MINUS. Depending on the current measurement system additional shunt resistors could be added between the halfbridge´s MINUS contacts and the common MINUS. Gate resistors are included to optimize the switching speed. If necessary an additional external resistor could be added in the gate drive circuit. Additional source resistors (1Ohm) between the power board and the external driver circuit could avoid high currents between the sources of the halfbridges via the driver board. R11 is not assembled but offers the possibility to add a NTC or a PTC. 2.2 Mechanical details Board type Bergquist Thermal Clad HT, single layer Copper thickness 105µm/3oz. Dimensions 102mm*139mm Aluminum carrier thickness 2mm Insulator thickness 76µm Table 2.1: Details 4 Evaluation Board Application Note High Power Solutions with TO-Leadless 2.3 PCB Figure 2.1: PCB, example with IPT020N10N 5 Application Note AN 2013-09 V1.1 September 2013 Evaluation Board Application Note High Power Solutions with TO-Leadless 2.4 Position of assembled parts Figure 2.2: Placement 6 Application Note AN 2013-09 V1.1 September 2013 Evaluation Board Application Note High Power Solutions with TO-Leadless 2.5 Copper Figure 2.3: Copper tracks, 105µm/30z 7 Application Note AN 2013-09 V1.1 September 2013 Evaluation Board Application Note High Power Solutions with TO-Leadless 2.6 Schematic Figure 2.4: Schematic 8 Application Note AN 2013-09 V1.1 September 2013 Application Note AN 2013-09 Evaluation Board Application Note High Power Solutions with TO-Leadless 2.7 V1.1 September 2013 Signals Pin Number Signal Name Description 1 WP 2 --- NTC/PTC R11 3 W “W”/Source High Side “W” 4 --- NTC/PTC R11 5 WN 6 --- 7 W_COM 8 --- N. C. 9 VP Gate High Side “V” 10 --- N. C. 11 V “V”/Source High Side “V” 12 --- N. C. 13 VN Gate High Side “V” 14 --- N. C. 15 V_COM 16 --- N. C. 17 UP Gate High Side “U” 18 U_Com 19 U 20 UN Gate High Side “W” Gate Low Side “W” N. C. Minus “W” Minus “V” Minus “U” “U”/Source High Side “U” Gate Low Side “U” Table 2.2: Signal names and description 9 Evaluation Board Application Note High Power Solutions with TO-Leadless 3 Bill of Material 3.1 24V/36V version with 60V IPT007N06N Table 3.1: BOM for 24V/36V input voltage 3.2 48V version with 100V IPT020N10N Table 3.2: BOM for 48V input voltage 10 Application Note AN 2013-09 V1.1 September 2013 Evaluation Board Application Note High Power Solutions with TO-Leadless 4 Datasheets 4.1 IPT007N06N 11 Application Note AN 2013-09 V1.1 September 2013 Evaluation Board Application Note High Power Solutions with TO-Leadless Figure 4.1: First page of datasheet - IPT007N06N 12 Application Note AN 2013-09 V1.1 September 2013 Evaluation Board Application Note High Power Solutions with TO-Leadless 4.2 IPT020N10N Figure 4.2: First page of datasheet – IPT020N10N 13 Application Note AN 2013-09 V1.1 September 2013