UNISONIC TECHNOLOGIES CO., LTD Preliminary UNA06R1500H Power MOSFET 12A, 60V N–CHANNEL POWER MOSFET DESCRIPTION The UTC UNA06R1500H is an N-channel Power MOSFET, and it can withstand high energy in the avalanche and commutation modes. The UTC UNA06R1500H is needed for applications, such as power supplies, converters and power motor controls which require low voltage and high speed switching. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. FEATURES * RDS(ON) < 0.15Ω @ VGS = 10V, ID = 6.0 A * Fast switching capability SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UNA06R1500HL-TN3-R UNA06R1500HG-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-252 Pin Assignment 1 2 3 G D S Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 7 QW-R209-087.a UNA06R1500H Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL VDSS VGS ID IDM RATINGS 60 ±20 12 37 UNIT V V A A Continuous Continuous @ 25°C Drain Current Single Pulse (tP≤10µs) Single Pulse Drain–to–Source Avalanche EAS 10 mJ Energy – Starting TJ = 25°C Total Power Dissipation @ TA = 25°C, when mounted to PD 1.75 W minimum recommended pad size Operating Junction Temperature TJ -55~175 °C Storage Temperature TSTG -55~175 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL RESISTANCES CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case UNISONIC TECHNOLOGIES CO., LTD SYMBOL θJA θJC RATINGS 100 3.13 UNIT W/°C W/°C 2 of 7 www.unisonic.com.tw QW-R209-087.a UNA06R1500H Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Temperature Coefficient (Positive) Breakdown Voltage Temperature Coefficient ∆BVDSS ∆TJ Drain-Source Leakage Current IDSS MIN TYP MAX UNIT 60 V mV/°C 65 ID=250uA, Referenced to 25°C mV/°C VDS=60V, VGS=0V VDS=60V, VGS=0V, TJ=150°C VGS=±20V, VDS=0 Gate- Source Leakage Current IGSS ON CHARACTERISTICS (Note 1) Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State RDS(ON) VGS=10V, ID=6.0A Resistance DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS (Note 2) Total Gate Charge QG VGS=10V, VDS=30V, ID=1A Gate Source Charge QGS IG=100µA Gate Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=30V, VGS=10V, ID=6A, Rise Time tR RG=9.5Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous IS Current Drain-Source Diode Forward Voltage IS=12A, VGS=0V VSD (Note 1) IS=12A, VGS=0V, TJ=150°C Reverse Recovery Time trr IS=12A, di/dt=100A/µs Reverse Recovery Charge Qrr Notes: 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. UNISONIC TECHNOLOGIES CO., LTD 1 100 100 2.0 µA nA 4.0 V 0.15 Ω 120 15 10 pF pF pF 8 1 0.96 20 15 20 20 30 35 30 35 nC nC nC ns ns ns ns 12 A 1.1 1.6 0.91 56 0.128 V V ns nC 3 of 7 www.unisonic.com.tw QW-R209-087.a UNA06R1500H Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD 4 of 7 www.unisonic.com.tw QW-R209-087.a UNA06R1500H Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD Time Unclamped Inductive Switching Waveforms 5 of 7 www.unisonic.com.tw QW-R209-087.a UNA06R1500H UNISONIC TECHNOLOGIES CO., LTD Preliminary Power MOSFET 6 of 7 www.unisonic.com.tw QW-R209-087.a UNA06R1500H Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 7 of 7 www.unisonic.com.tw QW-R209-087.a