Datasheet

UNISONIC TECHNOLOGIES CO., LTD
13NM60-SH
Power MOSFET
13A, 600V N-CHANNEL
SUPER-JUNCTION MOSFET
1


FEATURES
* RDS(ON) < 0.45Ω @ VGS = 10V, ID = 6.5A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
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SYMBOL

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
13NM60L-TA3-T
13NM60G-TA3-T
TO-220
13NM60L-TF1-T
13NM60G-TF1-T
TO-220F1
13NM60L-TF2-T
13NM60G-TF2-T
TO-220F2
13NM60L-TF3-T
13NM60G-TF3-T
TO-220F
13NM60L-TN3-R
13NM60G-TN3-R
TO-252
13NM60L-TQ2-T
13NM60G-TQ2-T
TO-263
13NM60L-TQ2-R
13NM60G-TQ2-R
TO-263
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2016 Unisonic Technologies Co., Ltd
TO-220F
TO-220
DESCRIPTION
The UTC 13NM60-SH is a high voltage super junction
MOSFET and is designed to have better characteristics.
The UTC 13NM60-SH Utilizing an advanced charge-balance
technology, enhance system efficiency, improve EMI and
reliability. such as low gate charge, low on-state resistance and
have a high power density and high rugged avalanche
characteristics. This super junction MOSFET usually used at
AC/DC power conversion, and industrial power applications.
1
1
1
TO-220F2
TO-220F1
1
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
1
TO-263
Packing
Tube
Tube
Tube
Tube
Tape Reel
Tube
Tape Reel
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13NM60-SH
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Power MOSFET
MARKING
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Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current
ID
13
A
Pulsed Drain Current (Note 2)
IDM
52
A
Avalanche Current (Note 2)
IAR
13
A
Single Pulsed Avalanche Energy (Note 3)
EAS
270
mJ
Repetitive Avalanche Energy (Note 2)
EAR
17
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/TO-263
168
W
TO-220F/ TO-220F1
Power Dissipation (TC=25°C)
PD
50
W
TO-220F2
TO-252
48
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 150mH, IAS = 2.6A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 13A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
5. Drain current limited by maximum junction temperature
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THERMAL DATA
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
Junction to Ambient
TO-263
TO-252
TO-220/TO-263
TO-220F/TO-220F1
Junction to Case
TO-220F2
TO-252
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
θJC
RATINGS
UNIT
62.5
°С/W
110
0.74
°С/W
°С/W
2.5
°С/W
2.6
°С/W
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ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BVDSS
IDSS
VGS = 0V, ID = 250μA
600
VDS = 600V, VGS = 0V
VGS = 30V, VDS = 0V
Gate-Source Leakage Current
IGSS
VGS = -30V, VDS = 0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.5
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 6.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
VDS=50V, ID=1.3A, IG=100μA
Gate-Source Charge
QGS
VGS=10V (Note 1,2)
Gate-Drain Charge
QGD
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
VDD =30V, ID =0.5A, RG =25Ω,
VGS=10V (Note 1,2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Drain-Source Diode Forward Voltage
VSD
VGS = 0V, IS = 13 A
Reverse Recovery Time
trr
VGS = 0V, IS = 13A,
dIF / dt =100A/μs (Note 1)
Reverse Recovery Charge
Qrr
Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating ambient temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
10
100
-100
V
μA
nA
nA
V/°C
4.5
0.45
V
Ω
0.5
300
330
40
pF
pF
pF
100
9
25
56
140
210
130
nC
nC
nC
nS
nS
nS
nS
370
5.4
13
A
52
A
1.4
V
nS
μC
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TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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