UNISONIC TECHNOLOGIES CO., LTD 6NM80 Preliminary Power MOSFET 6.0A, 800V N-CHANNEL SUPER-JUNCTION MOSFET 1 TO-220 DESCRIPTION The UTC 6NM80 is an Super Junction MOSFET Structure. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. The UTC 6NM80 is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc. 1 TO-220F1 1 TO - 252 FEATURES * RDS(on) < 1.2 Ω @ VGS=10V, ID=3A * Improved dv/dt capability * Fast switching * 100% avalanche tested SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 6NM80L-TA3-T 6NM80G-TA3-T TO-220 6NM80L-TF1-T 6NM80G-TF1-T TO-220F1 6NM80L-TN3-R 6NM80G-TN3-R TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tape Reel 1 of 7 QW-R209-070.b 6NM80 Preliminary Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R209-070.b 6NM80 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 800 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current ID 6 A Pulsed Drain Current (Note 2) IDM 24 A Avalanche Current (Note 2) IAR 6 A Single Pulsed Avalanche Energy (Note 3) EAS 159 mJ Repetitive Avalanche Energy (Note 2) EAR 17 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 135 W Power Dissipation PD TO-220F1 45 W TO-252 60 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 24mH, IAS = 1.2A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 7A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 5. Drain current limited by maximum junction temperature THERMAL DATA PARAMETER TO-220/TO-220F1 Junction-to-Ambient TO-252 TO-220 Junction-to-Case TO-220F1 TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62.5 110 0.92 2.78 2.08 UNIT °C/W °C/W °C/W °C/W °C/W 3 of 7 QW-R209-070.b 6NM80 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS MIN TYP MAX UNIT BVDSS IDSS VGS = 0V, ID = 250μA 800 V VDS = 800V, VGS = 0V 10 μA VGS = 30V, VDS = 0V 100 nA Gate-Source Leakage Current IGSS -100 nA VGS = -30V, VDS = 0V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250mA,Referenced to 25°C 0.5 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.5 4.5 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 3A 1.2 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 700 pF VDS=25V, VGS=0V, f=1.0MHz Output Capacitance COSS 100 pF Reverse Transfer Capacitance CRSS 15 pF SWITCHING CHARACTERISTICS Total Gate Charge QG 125 nC VDS=50V, ID=1.3A, IG=100μA Gate-Source Charge QGS 8.8 nC VGS=10 V (Note 1,2) 18.4 nC Gate-Drain Charge QGD Turn-On Delay Time tD(ON) 56 nS Turn-On Rise Time tR 100 nS VDD=30V, ID=0.5A, RG=25Ω (Note 1,2) Turn-Off Delay Time tD(OFF) 250 nS 40 nS Turn-Off Fall Time tF DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode IS 6 A Forward Current Maximum Pulsed Drain-Source Diode ISM 24 A Forward Current Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 6 A 1.4 V Reverse Recovery Time trr 615 nS VGS = 0V, IS = 6A, dIF / dt =100A/μs (Note 1) Reverse Recovery Charge QRR 5.4 μC Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating ambient temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R209-070.b 6NM80 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Gate Charge Test Circuit Gate Charge Waveforms Resistive Switching Test Circuit Resistive Switching Waveforms 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 7 QW-R209-070.b 6NM80 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period Peak Diode Recovery dv/dt Test Circuit & Waveforms VGS (Driver ) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 7 QW-R209-070.b 6NM80 Preliminary Power MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (µA) 300 Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 250 Drain Current, ID (µA) 200 150 100 200 150 100 50 50 0 0 0 2 1 3 4 Gate Threshold Voltage, VTH (V) 5 Drain Current, ID (A) Continuous Drain-Source Diode Forward Current, IS (A) 0 100 200 300 400 500 600 Drain-Source Breakdown Voltage, BVDSS(V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R209-070.b