UNISONIC TECHNOLOGIES CO., LTD UDA03R075M Preliminary POWER MOSFET 30V DUAL N-CHANNEL POWERTRENCH MOSFET DESCRIPTION 1 The UTC UDA03R075M is a dual N-Channel PowerTrench MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, etc. The UTC UDA03R075M is suitable for computing, general purpose point of load and notebook VCORE, etc. TDFN-8(5x6) FEATURES Q1: N-Channel * RDS(ON) < 7.5 mΩ @ VGS=10V, ID=12A RDS(ON) < 12.4 mΩ @ VGS=4.5V, ID=10A Q2: N-Channel * RDS(ON) < 5.5 mΩ @ VGS=10V, ID=16A RDS(ON) < 7.0 mΩ @ VGS=4.5V, ID=14A SYMBOL ORDERING INFORMATION Ordering Number Package 1 UDA03R075MG-TK08-5060-R TDFN-8(5×6) G1 Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 2 D1 Pin Assignment 3 4 5 6 D1 D1 S2 S2 7 S2 8 G2 Packing Tape Reel 1 of 8 QW-R209-091.a UDA03R075M MARKING PIN CONFIGURATION Preliminary UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Power MOSFET 2 of 8 QW-R209-091.a UDA03R075M Preliminary Power MOSFET ABSOLUTE MAXIMUM RATING (TA=25°C unless otherwise noted) RATINGS UNIT Q1 Q2 Drain-Source Voltage VDSS 30 30 V Gate-Source Voltage (Note 3) VGSS ±20 ±20 V TC=25°C 32 30 A ID Continuous Drain Current TA=25°C 12 (Note 1a) 16 (Note 1b) A Pulsed IDP 60 60 A Power Dissipation for Single Operation TA=25°C 2.5 (Note 1a) W PD (Note 1) 1.0 (Note 1b) W TA=25°C Junction Temperature TJ -55~+150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. PARAMETER SYMBOL THERMAL RESISTANCES CHARACTERISTICS PARAMETER SYMBOL RATINGS Q1 Q2 UNIT °C/W °C/W Junction to Case θJC 3 1.2 °C/W Notes: 1. θJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. θJC is guaranteed by design while θCA is determined by the user's board design. 2. a. 50°C/W when mounted on a 1 in2 pad of 2 oz copper b. 120°C/W when mounted on a 1 in2 pad of 2 oz copper Junction to Ambient UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA 50 (Note 1a) 120 (Note 1b) 3 of 8 QW-R209-091.a UDA03R075M Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted.) Q1 PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current Forward ON CHARACTERISTICS Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-State Resistance SYMBOL BVDSS ∆BVDSS ∆TJ TEST CONDITIONS ID=250µA, VGS=0V VDS=24V, VGS=0V VGS=±20V, VDS=0V VGS(TH) ∆BVGS( TH) VGS=VDS, ID=250µA RDS(ON) TYP MAX UNIT 30 ID=250µA, Referenced to 25°C IDSS IGSS ∆TJ MIN V 35 1 1.5 ID=250µA, Referenced to 25°C -4.5 VGS=10V, ID=12A VGS=4.5V, ID=10A VGS=10V, ID=12A, TJ=125°C VDD=10V, ID=12A 9.2 8.6 54 mV/°C 1 ±100 µA nA 3 V mV/°C 7.5 12.4 13 mΩ mΩ mΩ S Forward Transconductance gFS DYNAMIC PARAMETERS Input Capacitance CISS 1280 1705 pF VDS=15V, VGS=0V, f=1.0MHz Output Capacitance COSS 525 700 pF 80 120 pF Reverse Transfer Capacitance CRSS Gate Resistance RG f=1MHz 1.0 Ω SWITCHING PARAMETERS Total Gate Charge QG 9 13 nC VDS= 50V, ID= 1.3A, Gate to Source Charge QGS 3 nC VGS= 10 V (Note 1, 2) Gate to Drain Charge QGD 2.7 nC Turn-ON Delay Time tD(ON) 13 23 ns VDD = 30V, ID = 0.5A, Rise Time tR 6 12 ns RG = 25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) 42 67 ns Fall-Time tF 12 22 ns SOURCE TO DRAIN DIODE SPECIFICATIONS Continuous Drain-Source Diode Forward IS 2.1 A Current Source to Drain Diode Forward Voltage VSD VGS=0V, IS=2.1A (Note 2) 0.7 1.2 V Reverse Recovery Time trr 33 ns IF=12A, di/dt=100A/µs 20 nC Reverse Recovery Charge Qrr Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2.0%. 2. As an N-ch device, the negative VGS rating is for low duty cycle pulse occurrence only. No continuous rating is implied. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R209-091.a UDA03R075M Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (Cont.) Q2 PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current Forward ON CHARACTERISTICS Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-State Resistance SYMBOL BVDSS ∆BVDSS ∆TJ IDSS IGSS VGS(TH) ∆BVGS( TH) ∆TJ RDS(ON) TEST CONDITIONS ID=1mA, VGS=0V MIN TYP 30 ID=1mA, Referenced to 25°C V 29 VDS=24V, VGS=0V VGS=±20V, VDS=0V VGS=VDS, ID=1mA MAX UNIT 1 1.8 ID=1mA, Referenced to 25°C -6.0 VGS=10V, ID=16A VGS=4.5V, ID=14A VGS=10V, ID=16A, TJ=125°C VDD=10V, ID=16A 4.5 5.3 5.4 68 mV/°C 500 ±100 µA nA 3 V mV/°C 5.5 7.0 8.3 mΩ mΩ mΩ S Forward Transconductance gFS DYNAMIC PARAMETERS Input Capacitance CISS 2300 3060 pF VDS=15V, VGS=0V, f=1.0MHz Output Capacitance COSS 1545 2055 pF 250 375 pF Reverse Transfer Capacitance CRSS Gate Resistance RG f=1MHz 1.7 Ω SWITCHING PARAMETERS Total Gate Charge QG 21 29 nC VDD=15V, VGS=4.5V, ID=16A Gate to Source Charge QGS 8 nC Gate to Drain Charge QGD 6.5 nC Turn-ON Delay Time tD(ON) 17 31 ns VDD=10V, VGS=10V, ID=1A, Rise Time tR 11 20 ns RG=6Ω Turn-OFF Delay Time tD(OFF) 54 86 ns Fall-Time tF 32 51 ns SOURCE TO DRAIN DIODE SPECIFICATIONS Continuous Drain-Source Diode Forward IS 3.5 A Current Source to Drain Diode Forward Voltage VSD VGS=0V, IS=3.5A (Note 2) 0.4 1.0 V Reverse Recovery Time trr 27 ns IF=16A, di/dt=100A/µs 33 nC Reverse Recovery Charge Qrr Notes: 1. Pulse Test: Pulse width<300μs, Duty cycle<2.0%. 2. As an N-ch device, the negative VGS rating is for low duty cycle pulse occurrence only. No continuous rating is implied. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R209-091.a UDA03R075M Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 8 QW-R209-091.a UDA03R075M Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 7 of 8 QW-R209-091.a UDA03R075M Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R209-091.a