EPB018B5/B7/B9-70 Super Low Noise High Gain Heterojunction FET ISSUED 11/01/2007 FEATURES • • • • • NON-HERMETIC LOW COST CERAMIC 70 mil PACKAGE TYPICAL 0.50~0.90dB NOISE FIGURE AND 11.5~13.0dB ASSOCIATED GAIN AT 12GHz 0.3 X 180 MICRON RECESSED “ MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES SUPER LOW NOISE, HIGH GAIN AND HIGH RELIABILITY Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL PARAMETERS/TEST CONDITIONS MIN TYP MAX UNITS 0.60 0.80 1.20 dB 15 0.50 0.65 0.95 13.0 12.5 11.5 15.0 15.0 14.0 11.5 45 50 90 IDSS EPB018B5-70 EPB018B7-70 EPB018B9-70 EPB018B5-70 Associated Gain, f = 12GHz EPB018B7-70 VDS = 2 V, IDS ≈ 15 mA EPB018B9-70 Output Power at 1dB Compression f = 12GHz f = 18GHz VDS = 3 V, IDS = 25 mA Gain at 1dB Compression f = 12GHz f = 18GHz VDS = 3 V, IDS = 25 mA Saturated Drain Current VDS = 2 V, VGS = 0 V GM Transconductance VP Pinch-off Voltage VDS = 2 V, IDS = 1.0 mA BVGD Drain Breakdown Voltage IGD = 10 uA -3 -6 BVGS Source Breakdown Voltage IGS = 10 uA -3 -6 Noise Figure, f = 12GHz VDS = 2 V, IDS ≈ 15 mA NF Ga P1dB G1dB VDS = 2 V, VGS = 0 V Thermal Resistance RTH 11.5 11.0 10.5 dB dBm dB 80 mA mS -0.8 -2.5 V V V o 480* C/W Notes: * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25°C SYMBOLS Vds Vgs PARAMETERS Drain-Source Voltage Gate-Source Voltage ABSOLUTE1 5V -3V CONTINUOUS2 4V -2V Ids Drain Current Idss 60mA Igsf Forward Gate Current 2mA 0.3mA Pin Input Power 12dBm @1dB Compression Tch Tstg Pt Channel Temperature Storage Temperature Total Power Dissipation o 175 C o -65/175 C 285mW o 150 C o -65/150 C 240mW Notes: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 3 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2007 EPB018B5/B7/B9-70 Super Low Noise High Gain Heterojunction FET ISSUED 11/01/2007 S-PARAMETERS VDS = 2 V, IDS = 15 mA EPB018B5-70 -S11- -S21- EPB018B7-70 -S12- -S22- FREQ (GHz) MAG ANG MAG ANG MAG ANG MAG 1.0 2.0 0.983 0.944 -18.6 -37.5 6.245 5.964 162.2 144.3 0.019 0.036 78.9 65.2 3.0 0.896 -55.5 5.582 127.7 0.050 4.0 0.849 -72.6 5.327 112.4 0.063 5.0 0.797 -89.2 5.111 97.6 6.0 0.747 -103.7 4.799 7.0 8.0 -S11- -S21- -S12- -S22- ANG FREQ (GHz) MAG ANG MAG ANG MAG ANG MAG ANG 0.530 0.507 -13.5 -28.8 1.0 2.0 0.985 0.949 -18.9 -38.2 5.754 5.495 162.0 143.9 0.021 0.040 77.1 63.1 0.677 0.650 -13.7 -28.9 53.6 0.485 -42.6 3.0 0.903 -56.2 5.137 127.2 0.055 50.5 0.622 -42.7 43.6 0.464 -54.2 4.0 0.860 -73.6 4.914 111.8 0.067 39.1 0.595 -54.1 0.074 33.1 0.421 -65.4 5.0 0.812 -90.4 4.726 96.9 0.079 28.5 0.549 -65.4 83.4 0.081 23.4 0.370 -78.6 6.0 0.765 -104.9 4.461 82.4 0.086 17.8 0.495 -78.6 0.691 -118.6 4.503 69.9 0.085 13.9 0.344 -90.7 7.0 0.713 -119.9 4.189 68.6 0.092 7.3 0.464 -90.5 0.642 -132.8 4.277 57.0 0.088 4.7 0.303 -100.7 8.0 0.664 -134.3 3.982 55.4 0.093 -3.6 0.411 -100.6 9.0 0.600 -155.6 4.189 42.7 0.093 -5.1 0.271 -111.2 9.0 0.621 -157.1 3.908 40.9 0.096 -12.9 0.374 -108.6 10.0 0.567 -178.3 4.012 27.8 0.096 -16.3 0.228 -126.9 10.0 0.591 -179.4 3.759 25.7 0.098 -24.5 0.328 -121.7 11.0 0.534 170.3 3.846 15.5 0.094 -26.5 0.193 -145.5 11.0 0.564 169.0 3.644 12.8 0.099 -33.4 0.295 -140.0 12.0 0.515 155.6 3.758 2.9 0.093 -33.1 0.177 -161.2 12.0 0.541 153.2 3.551 -0.8 0.098 -43.3 0.266 -157.6 13.0 0.555 128.7 3.569 -12.5 0.091 -44.2 0.137 176.3 13.0 0.574 126.2 3.360 -16.6 0.096 -54.9 0.210 -174.2 14.0 0.596 106.0 3.317 -27.1 0.088 -55.6 0.114 151.4 14.0 0.609 103.6 3.093 -31.7 0.090 -66.7 0.173 167.6 15.0 0.592 91.3 3.214 -41.3 0.087 -66.9 0.141 123.9 15.0 0.598 88.8 2.985 -46.4 0.090 -78.4 0.187 139.8 16.0 0.597 74.3 3.086 -56.8 0.083 -81.1 0.158 94.5 16.0 0.597 71.4 2.857 -62.2 0.085 -92.9 0.194 109.8 17.0 0.619 59.2 2.756 -69.5 0.071 -90.3 0.134 68.1 17.0 0.612 55.7 2.548 -75.5 0.072 -102.8 0.155 89.8 18.0 0.670 49.9 2.668 -79.4 0.071 -97.3 0.136 64.0 18.0 0.661 46.6 2.472 -85.8 0.076 -105.2 0.183 89.7 19.0 0.668 33.0 2.623 -95.4 0.069 -115.9 0.169 51.0 19.0 0.657 29.0 2.381 -102.1 0.076 -126.2 0.221 68.8 20.0 0.708 17.3 2.551 -111.1 0.064 -131.4 0.172 37.8 20.0 0.697 13.2 2.286 -118.1 0.071 -141.6 0.240 56.1 21.0 0.757 8.2 2.447 -125.1 0.061 -144.1 0.159 18.7 21.0 0.740 4.4 2.173 -131.8 0.068 -155.3 0.221 40.9 22.0 0.743 -2.5 2.325 -139.4 0.063 -159.2 0.135 14.7 22.0 0.728 -5.8 2.067 -145.9 0.070 -167.9 0.210 36.8 23.0 0.726 -21.1 2.224 -158.5 0.065 179.4 0.115 -1.3 23.0 0.717 -24.4 1.958 -164.5 0.071 172.5 0.188 21.8 24.0 0.747 -39.6 2.063 -178.1 0.067 158.8 0.102 -39.6 24.0 0.743 -41.8 1.807 176.3 0.071 151.8 0.154 -5.5 25.0 0.709 -52.6 2.024 167.9 0.072 144.7 0.136 -56.6 25.0 0.710 -53.5 1.757 161.7 0.075 138.3 0.174 -28.1 26.0 0.683 -70.6 2.006 150.2 0.083 132.8 0.117 -71.3 26.0 0.689 -69.1 1.759 145.4 0.084 124.1 0.152 -47.5 NOISE-PARAMETERS EPB018B7-70 FREQ (GHz) 2 4 6 8 10 12 14 16 18 20 22 24 26 VDS = 2 V, IDS = 15 mA Gamma Opt MAG ANG 0.76 25 0.65 56 0.51 84 0.41 118 0.26 159 0.26 -144 0.32 -82 0.40 -46 0.40 -26 0.51 8 0.41 27 0.48 75 0.52 108 Nfmin (dB) 0.37 0.43 0.48 0.55 0.61 0.68 0.89 1.10 1.30 1.45 1.69 1.83 2.05 Rn/50 0.26 0.22 0.16 0.11 0.08 0.08 0.18 0.29 0.45 0.55 0.61 0.59 0.40 Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 2 of 3 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2007 EPB018B5/B7/B9-70 ISSUED 11/01/2007 Super Low Noise High Gain Heterojunction FET DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 3 of 3 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2007