EPA018B-70 High Efficiency Heterojunction Power FET ISSUED 11/01/2007 FEATURES • • • • • • • Non-Hermetic Low Cost Ceramic 70mil Package +20.0 dBm Output Power at 1dB Compression 11.0 dB Power Gain at 18GHz Typical 0.75 dB Noise Figure and 12.5 dB Associated Gain at 12GHz 0.3 x 180 Micron Recessed “Mushroom” Gate Si3N4 Passivation Advanced Epitaxial Heterojunction Profile Provides Extra High Power Efficiency, and High Reliability Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL PARAMETERS/TEST CONDITIONS TYP 18.5 20.0 20.0 13.5 11.0 MAX UNITS f = 12GHz f = 12GHz 45 % NF Output Power at 1dB Compression VDS = 6V, IDS ≈ 50% IDSS Gain at 1dB Compression VDS = 6V, IDS ≈ 50% IDSS Power Added Efficiency at 1dB Compression VDS = 6V, IDS ≈ 50% IDSS Noise Figure VDS = 2V, IDS = 15mA 0.75 dB GA Associate Gain VDS = 2V, IDS = 15mA f = 12GHz 12.5 dB IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V 30 55 GM Transconductance VDS = 3 V, VGS = 0 V 35 60 VP Pinch-off Voltage VDS = 3 V, IDS = 1.0 mA BVGD Drain Breakdown Voltage IGD = 1.0mA -9 -15 BVGS Source Breakdown Voltage IGS = 1.0mA -6 -14 P1dB G1dB PAE RTH f = 12GHz f = 18GHz f = 12GHz f =18GHz MIN Thermal Resistance 11.0 dBm dB 80 mA mS -1.0 -2.5 V V V o 480* C/W Notes: * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25°C1,2 1. 2. 1 2 SYMBOL CHARACTERISTIC ABSOLUTE CONTINUOUS VDS Drain to Source Voltage 12 V 6V VGS Gate to Source Voltage -6 V -3 V IDS Drain Current Idss 40 mA IGSF Forward Gate Current 9 mA 1.5 mA PIN Input Power 16 dBm @ 3dB compression PT Total Power Dissipation 285 mW 240 mW TCH Channel Temperature 175°C 150°C TSTG Storage Temperature -65/+175°C -65/+150°C Exceeding any of the above ratings may result in permanent damage. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 2 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2007 EPA018B-70 High Efficiency Heterojunction Power FET ISSUED 11/01/2007 S-PARAMETERS 6V, ½ Idss FREQ (GHz) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 --- S11 --MAG ANG --- S21 --MAG ANG --- S12 --MAG ANG --- S22 --MAG ANG 0.984 0.950 0.906 0.863 0.813 0.764 0.715 0.663 0.614 0.587 0.561 0.539 0.573 0.611 0.613 0.620 0.640 0.692 0.691 0.731 0.783 0.771 0.752 0.776 0.756 0.742 5.081 4.859 4.547 4.348 4.195 3.973 3.746 3.572 3.501 3.388 3.307 3.248 3.097 2.873 2.805 2.730 2.432 2.365 2.236 2.163 2.061 1.923 1.800 1.693 1.690 1.710 0.014 0.026 0.035 0.041 0.047 0.049 0.050 0.046 0.044 0.044 0.044 0.045 0.049 0.050 0.055 0.059 0.056 0.075 0.064 0.064 0.065 0.062 0.058 0.054 0.055 0.060 0.813 0.789 0.766 0.745 0.713 0.675 0.649 0.612 0.605 0.585 0.562 0.551 0.527 0.510 0.513 0.503 0.463 0.522 0.540 0.591 0.578 0.592 0.592 0.584 0.568 0.555 -19.0 -38.2 -56.4 -74.0 -90.7 -105.0 -120.3 -134.7 -157.7 -179.9 168.8 153.6 127.2 104.9 90.9 74.4 58.9 49.7 32.0 16.7 7.8 -2.6 -20.8 -37.7 -48.6 -62.4 162.1 144.2 127.3 111.9 97.2 82.9 68.8 55.9 41.4 26.4 13.4 0.0 -15.8 -31.1 -46.4 -62.7 -76.4 -87.1 -104.4 -120.6 -134.9 -148.7 -166.5 174.8 160.0 144.5 75.9 63.4 51.4 42.1 32.9 24.2 15.3 6.9 5.6 2.1 0.2 2.0 -0.6 -6.1 -13.0 -20.7 -20.7 -32.3 -49.1 -59.8 -70.3 -85.6 -103.2 -123.0 -139.5 -154.9 -11.1 -23.7 -35.3 -44.6 -53.3 -64.4 -74.6 -82.6 -87.5 -97.0 -110.8 -122.8 -131.9 -143.2 -162.9 178.0 169.1 157.0 133.7 117.3 106.6 95.6 76.9 59.7 45.9 33.7 DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 2 of 2 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2007