UNISONIC TECHNOLOGIES CO., LTD 4N65K-TC Power MOSFET 4.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-TC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications including power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.0 A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 4N65KL-TA3-T 4N65KG-TA3-T TO-220 4N65KL-TF1-T 4N65KG-TF1-T TO-220F1 4N65KL-TF2-T 4N65KG-TF2-T TO-220F2 4N65KL-TF3-T 4N65KG-TF3-T TO-220F 4N65KL-TM3-T 4N65KG-TM3-T TO-251 4N65KL-TMS-T 4N65KG-TMS-T TO-251S 4N65KL-TN3-R 4N65KG-TN3-R TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tube Tape Reel 1 of 8 QW-R205-104.C 4N65K-TC Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R205-104.C 4N65K-TC Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Continuous ID 4.0 A Drain Current Pulsed (Note2) IDM 16 A Avalanche Energy Single Pulsed (Note3) EAS 113 mJ Peak Diode Recovery dv/dt (Note4) dv/dt 3.79 V/ns TO-220 106 W TO-220F/TO-220F1 36 W Power Dissipation TO-220F2 TO-251/TO-251S 50 W TO-252 PD TO-220 0.84 W/°C TO-220F/TO-220F1 0.29 W/°C Derate above 25°C TO-220F2 TO-251/TO-251S 0.40 W/°C TO-252 Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L=25mH, IAS=3.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤4.0A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER TO-220/TO-220F TO-220F1/TO-220F2 Junction-to-Ambient TO-251/TO-251S TO-252 TO-220 TO-220F/TO-220F1 Junction-to-Case TO-220F2 TO-251/TO-251S TO-252 SYMBOL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS UNIT 62.5 °C/W 83 °C/W 1.18 3.4 3.57 °C/W °C/W °C/W 2.5 °C/W θJA θJC 3 of 8 QW-R205-104.C 4N65K-TC Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL BVDSS IDSS TEST CONDITIONS VGS = 0 V, ID = 250μA VDS = 650 V, VGS = 0 V Forward VGS = 30 V, VDS = 0 V Gate-Source Leakage Current IGSS Reverse VGS = -30 V, VDS = 0 V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 2.0A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25 V, VGS = 0V, Output Capacitance COSS f = 1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge QG VDS=50V, VGS=10V, ID=1.3A Gate-Source Charge QGS IG= 100μA (Note1, 2) Gate-Drain Charge QGD Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDS=30V, VGS=10V, ID=0.5A, RG=25Ω (Note1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 4.0A Reverse Recovery Time trr VGS = 0V, IS = 4.0A, dIF / dt =100A/μs (Note 1) Reverse Recovery Charge Qrr Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 650 0.6 2.0 V 10 μA 100 nA -100 nA V/°С 4.0 2.5 V Ω 490 54 5.8 pF pF pF 32 4.2 5.6 44 28 116 33 nC nC nC ns ns ns ns 360 1.42 4.0 A 16 A 1.4 V nS μC 4 of 8 QW-R205-104.C 4N65K-TC Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R205-104.C 4N65K-TC Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDD VGS RG D.U.T. 10V Pulse Width≤ 1μs Duty Factor≤0.1% Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 8 QW-R205-104.C 4N65K-TC Power MOSFET TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R205-104.C 4N65K-TC Power MOSFET TYPICAL CHARACTERISTICS (Cont.) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R205-104.C