UNISONIC TECHNOLOGIES CO., LTD UF830K-TA Preliminary Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF830K-TA is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON) < 1.8Ω @ VGS = 10V, ID = 2.5 A * Single Pulse Avalanche Energy Rated * Rugged- SOA is Power Dissipation Limited * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF830KL-TA3-T UF830KG-TA3-T UF830KL-TF3-T UF830KG-TF3-T UF830KL-TF1-T UF830KG-TF1-T UF830KL-TF2-T UF830KG-TF2-T UF830KL-TF3T-T UF830KG-TF3T-T UF830KL-TM3-T UF830KG-TM3-T UF830KL-TMS-T UF830KG-TMS-T UF830KL-TMS2-T UF830KG-TMS2-T UF830KL-TMS4-T UF830KG-TMS4-T UF830KL-TN3-R UF830KG-TN3-R UF830KL-TND-R UF830KG-TND-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd Package TO-220 TO-220F TO-220F1 TO-220F2 TO-220F3 TO-251 TO-251S TO-251S2 TO-251S4 TO-252 TO-252D Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tube Tube Tube Tube Tape Reel Tape Reel 1 of 7 QW-R205-095.a UF830K-TA Preliminary Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R205-095.a UF830K-TA Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless Otherwise Specified.) PARAMETER Drain to Source Voltage (TJ=25°C ~125°C) Drain to Gate Voltage (RG=20kΩ, TJ=25°C ~125°C) Gate to Source Voltage Continuous Drain Current Pulsed SYMBOL VDS VDGR VGS ID IDM RATINGS 500 500 ±30 4.5 18 UNIT V V V A A Peak Diode Recovery dv/dt (Note 3) 2 V/ns dv/dt TO-220 73 W TO-220F/TO-220F1 38 W TO-220F3 Power Dissipation (TC = 25°C) TO-220F2 PD 40 W TO-251/TO-251S TO-251S2/ TO-251S4 46 W TO-252/TO-252D Single Pulse Avalanche Energy Rating (Note 2) EAS 80 mJ Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. L = 8mH, IAS = 4.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 4.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER TO-220/TO-220F TO-220F1/TO-220F2 TO-220F3 Junction to Ambient TO-251/TO-251S TO-251S2/ TO-251S4 TO-252/TO-252D TO-220 TO-220F/TO-220F1 TO-220F3 Junction to Case TO-220F2 TO-251/TO-251S TO-251S2/ TO-251S4 TO-252/TO-252D UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL RATINGS UNIT 62.5 °C/W 100.3 °C/W 1.71 °C/W 3.31 °C/W 3.125 °C/W 2.7 °C/W θJA θJC 3 of 7 QW-R205-095.a UF830K-TA Preliminary Power MOSFET ELECTRICAL SPECIFICATIONS (TA =25°C, unless otherwise specified.) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage On-State Drain Current (Note 1) Drain-Source Leakage Current SYMBOL TEST CONDITIONS MIN BVDSS ID(ON) ID=250μA, VGS=0V VDS>ID(ON)×RDS(ON)MAX, VGS=10V VDS= Rated BVDSS, VGS=0V VDS=0.8×Rated BVDSS VGS=0V, TJ= 125°C VGS=±30V 500 4.5 IDSS Gate-Source Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VGS=VDS, ID=250μA 2.0 Static Drain-Source On-State Resistance RDS(ON) ID=2.5A, VGS=10V (Note 2) DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, ID=1.3A, VDD=50V Gate-Source Charge QGS IG=100μA (Note 3) Gate-Drain Charge QGD Turn-On Delay Time tD(ON) VDD=30V, VGS=10V, ID=0.5A, Turn-On Rise Time tR RG=25Ω (Note 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF SOURCE TO DRAIN DIODE SPECIFICATIONS Source to Drain Diode Voltage (TJ=25°C) VSD ISD=4.4A, VGS=0V (Note 1) Continuous Source to Drain Current IS (Note 4) Pulse Source to Drain Current ISD Reverse Recovery Time trr VGS = 0V, IS = 4.5A, dIF / dt =100A/μs (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%. 2. MOSFET Switching Times are Essentially Independent of Operating Temperature. 3. Gate Charge is Essentially Independent of Operating Temperature. 4. Modified MOSFET symbol showing the integral reverse P-N junction diode as below. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP MAX UNIT 25 V A μA 250 μA ±100 nA 4.0 1.8 V Ω 260 56 7 pF pF pF 45 4 4 36 29 110 29 nC nC nC ns ns ns ns 1.6 4.5 18 450 3 V A A nS μC 4 of 7 QW-R205-095.a UF830K-TA Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS L Vary tP to Obtain Required Peak IAS + RG VDD VGS DUT 0V tp IAS 0.01Ω Unclamped Energy Test Circuit Unclamped Energy Waveforms RL + RG VDD DUT VGS Switching Time Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R205-095.a UF830K-TA Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) tON tOFF tDLY(ON) tDLY(OFF) tR VDS tF 90% 90% 10% 0 10% 90% VGS 0 50% 10% PULSE WIDTH 50% Resistive Switching Waveforms Gate Charge Test Circuit Gate Charge Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 7 QW-R205-095.a UF830K-TA Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R205-095.a