SW4N65K

SW4N65K
N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET
Features
TO-251
TO-220F






High ruggedness
Low RDS(ON) (Typ 1Ω)@VGS=10V
Low Gate Charge (Typ13 nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:Adapter,LED,Charge,
TV-Power
TO-252
BVDSS : 650V
: 4A
ID
RDS(ON) :1 Ω
1
2
1
3
1
2
3
2
2
3
1
1. Gate 2. Drain 3. Source
3
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
Sales Type
Marking
Package
Packaging
1
2
3
SW F 4N65K
SW I 4N65K
SW D 4N65K
SW4N65K
SW4N65K
SW4N65K
TO-220F
TO-251
TO-252
TUBE
TUBE
REEL
Absolute maximum ratings
Symbol
VDSS
ID
Value
Parameter
TO-220F TO-251 TO-252
Drain to source voltage
Unit
650
V
Continuous drain current (@TC
=25oC)
4*
A
Continuous drain current (@TC
=100oC)
2.5*
A
16
A
±30
V
IDM
Drain current pulsed
VGS
Gate to source voltage
EAS
Single pulsed avalanche energy
(note 2)
50
mJ
EAR
Repetitive avalanche energy
(note 1)
5
mJ
Peak diode recovery dv/dt
(note 3)
5
V/ns
dv/dt
PD
TSTG, TJ
TL
(note 1)
Total power dissipation (@TC=25oC)
Derating factor above
25oC
23.5
106.4
101.4
W
0.19
0.85
0.81
W/oC
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
-55 ~ + 150
oC
300
oC
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
Value
TO-220F TO-251 TO-252
Rthjc
Thermal resistance, Junction to case
5.31
1.18
Rthja
Thermal resistance, Junction to ambient
49.5
82.8
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
1.23
Unit
oC/W
oC/W
Oct. 2015. Rev. 3.0
1/7
SW4N65K
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
Drain to source breakdown voltage
VGS=0V, ID=250uA
ΔBVDSS
/ ΔTJ
Breakdown voltage temperature
coefficient
ID=250uA, referenced to 25oC
IDSS
Drain to source leakage current
BVDSS
IGSS
650
V
VDS=650V, VGS=0V
VDS=520V, TC
V/oC
0.55
=125oC
1
uA
50
uA
Gate to source leakage current, forward
VGS=30V, VDS=0V
100
nA
Gate to source leakage current, reverse
VGS=-30V, VDS=0V
-100
nA
5
V
1.25
Ω
On characteristics
VGS(TH)
Gate threshold voltage
VDS=VGS, ID=250uA
RDS(ON)
Drain to source on state resistance
VGS=10V, ID=2A
1
Forward transconductance
VDS=20V, ID=2A
2.8
Gfs
3
S
Dynamic characteristics
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
td(on)
Turn on delay time
tr
td(off)
tf
Qg
Rising time
Turn off delay time
384
VGS=0V, VDS=200V, f=1MHz
17
pF
1.1
10
VDS=325V, ID=4A, VGS=10V,
RG=25Ω
(note 4,5)
25
ns
26
Fall time
22
13
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
VDS=520V, VGS=10V, ID=4A
(note 4,5)
nC
3
6.5
Source to drain diode ratings characteristicsa
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
4
A
Pulsed source current
Integral reverse p-n Junction
diode in the MOSFET
16
A
Diode forward voltage drop.
IS=3.5A, VGS=0V
1.4
V
trr
Reverse recovery time
Qrr
Reverse recovery charge
IS=4A, VGS=0V,
dIF/dt=100A/us
IS
Continuous source current
ISM
VSD
207
ns
1.6
uC
Oct. 2015. Rev. 3.0
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※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 25mH, IAS = 2A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3.
ISD ≤ 4A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
5.
Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
SW4N65K
Fig. 1. On-state characteristics
Fig. 3. Gate charge characteristics
Fig 5. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 2. On-resistance variation vs.
drain current and gate voltage
Fig. 4. On state current vs. diode
forward voltage
Fig. 6. On resistance variation
vs. junction temperature
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 3.0
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SW4N65K
Fig. 7. Maximum safe operating area（TO-220F）
Fig. 9. Maximum safe operating area（TO-252）
Fig. 8. Maximum safe operating area（TO-251）
Fig. 10. Capacitance Characteristics
Fig. 11. Transient thermal response curve （TO-220F）
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SW4N65K
Fig. 12. Transient thermal response curve （TO-251）
Fig. 13. Transient thermal response curve（ TO-252）
Fig. 14. Gate charge test circuit & waveform
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SW4N65K
Fig. 15. Switching time test circuit & waveform
VDS
RL
90%
VDS
VDD
10VIN
DUT
10%
10%
VIN
RGS
td(on)
tf
td(off)
tr
tON
tOFF
Fig. 16. Unclamped Inductive switching test circuit & waveform
Fig. 17. Peak diode recovery dv/dt test circuit & waveform
DUT
+ VDS
10V
VGS (DRIVER)
L
IS
di/dt
IS (DUT)
IRM
VDS
RG
10VGS
Diode reverse current
VDD
Diode recovery dv/dt
Same type
as DUT
VDS (DUT)
*. dv/dt controlled by RG
*. Is controlled by pulse period
VF
VDD
Body diode forward voltage drop
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Oct. 2015. Rev. 3.0
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SW4N65K
DISCLAIMER
* All the data & curve in this document was tested in XI’AN SEMIPOWER TESTING & APPLICATION CENTER.
* This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing.
* Qualification standards can also be found on the Web site (http://www.semipower.com.cn)
* Suggestions for improvement are appreciated, Please send your suggestions to [email protected]
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Oct. 2015. Rev. 3.0
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