Datasheet

UNISONIC TECHNOLOGIES CO., LTD
5N60K-MTQ
Preliminary
Power MOSFET
5A, 600V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 5N60K-MTQ is a high voltage power MOSFET and
is designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies,
PWM motor controls, high efficient DC to DC converters and
bridge circuits.

FEATURES
* RDS(ON) < 2.2Ω @ VGS =10V, ID = 2.5A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness

SYMBOL
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5N60K-MTQ

Preliminary
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
5N60KL-TA3-T
5N60KG-TA3-T
5N60KL-TF1-T
5N60KG-TF1-T
5N60KL-TF2-T
5N60KG-TF2-T
5N60KL-TF3-T
5N60KG-TF3-T
5N60KL-TF3T-T
5N60KG-TF3T-T
5N60KL-TM3-T
5N60KG-TM3-T
5N60KL-TMS-T
5N60KG-TMS-T
5N60KL-TMS2-T
5N60KG-TMS2-T
5N60KL-TMS4-T
5N60KG-TMS4-T
5N60KL-TN3-R
5N60KG-TN3-R
5N60KL-TND-R
5N60KG-TND-R
5N60KL-T2Q-T
5N60KG-T2Q-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Power MOSFET
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-220F3
TO-251
TO-251S
TO-251S2
TO-251S4
TO-252
TO-252D
TO-262
1
G
G
G
G
G
G
G
G
G
G
G
G
Pin Assignment
2
D
D
D
D
D
D
D
D
D
D
D
D
3
S
S
S
S
S
S
S
S
S
S
S
S
Packing
Tube
Tube
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Tube
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Tube
Tape Reel
Tape Reel
Tube
MARKING
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5N60K-MTQ

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current
ID
5
A
Pulsed Drain Current (Note 2)
IDM
20
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
220
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/TO-262
100
W
TO-220F/TO-220F1
36
W
TO-220F3
Power Dissipation
PD
TO-220F2
38
W
TO-251/ TO-251S
TO-251S2/TO-251S4
54
W
TO-252/TO-252D
Junction Temperature
TJ
+150
°C
Operation Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. L = 17.6mH, IAS = 5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD ≤ 5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
Junction to Ambient
Junction to Case
PARAMETER
TO-220/TO-262
TO-220F/TO-220F1
TO-220F2/TO-220F3
TO-251/ TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
TO-220/TO-262
TO-220F/TO-220F1
TO-220F3
TO-220F2
TO-251/ TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
UNISONIC TECHNOLOGIES CO., LTD
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SYMBOL
RATINGS
UNIT
62.5
°C/W
160
°C/W
1.25
°C/W
3.47
°C/W
3.28
°C/W
2.30
°C/W
θJA
θJC
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Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BVDSS
IDSS
VGS =0V, ID = 250μA
600
VDS =600V, VGS = 0V
Forward
VGS =30V, VDS = 0V
Gate-Source Leakage Current
IGSS
Reverse
VGS =-30V, VDS = 0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID =250μA, Referenced to 25℃
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID = 250μA
3.0
Static Drain-Source On-State Resistance
RDS(ON)
VGS =10V, ID = 2.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
Output Capacitance
COSS
f = 1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
VDD=30V, ID =0.5A, RG =25Ω
(Note 1, 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
Total Gate Charge
QG
VDS=50V, ID=1.3A, VGS=10V
Gate-Source Charge
QGS
(Note 1, 2)
Gate-Drain Charge
QGD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 5A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Note: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
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1
100
-100
0.6
V
μA
nA
V/°C
1.5
5.0
2.2
V
Ω
460
70
8
620
90
12
pF
pF
pF
50
60
120
35
18
6.7
4.5
ns
ns
ns
ns
nC
nC
nC
1.4
V
5
A
20
A
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
+
-
L
RG
Driver
VGS
VGS
(Driver)
P.W.
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Period
D=
VDD
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
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Unclamped Inductive Switching Waveforms
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5N60K-MTQ
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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