UNISONIC TECHNOLOGIES CO., LTD 13P10 Power MOSFET 13A, 100V P-CHANNEL POWER MOSFET DESCRIPTION The 13P10 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. FEATURES * RDS(ON) < 0.25Ω @ VGS=-10V, ID=-6A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 13P10L-TM3-T 13P10G-TM3-T Pin Assignment: G: Gate D: Drain S: Source Package TO-251 Pin Assignment 1 2 3 G D S Packing Tube MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R210-016.a 13P10 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -100 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current ID -13 A Pulsed Drain Current (Note 2) IDM -52 A Avalanche Current (Note 2) IAR -13 A Single Pulsed Avalanche Energy (Note 3) EAS 300 mJ Repetitive Avalanche Energy (Note 2) EAR 17 mJ Power Dissipation PD 48 W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. L=3.5mH, IAS=-13A, VDD=-50V, RG=25Ω, Starting TJ=25°C 4. ISD≤-13A, di/dt ≤ 200μA/ s, VDD≤BVDSS, Starting TJ=25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 110 1.79 UNIT °С/W °С/W ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL BVDSS IDSS TEST CONDITIONS VGS=0 V, ID=-250µA VDS=-100V, VGS=0V VDS=-100V, TC=125°C VDS=0V, VGS=±30V MIN TYP MAX UNIT -100 -1 -10 ±100 Gate-Source Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=-250µA -2.0 -4.0 Static Drain-Source On-Resistance RDS(ON) VGS=-10V, ID=-6A 0.25 DYNAMIC PARAMETERS Input Capacitance CISS 280 VDS=-25V, VGS=0V, f=1.0MHz Output Capacitance COSS 175 Reverse Transfer Capacitance CRSS 3.6 SWITCHING PARAMETERS Total Gate Charge QG 92 VDS=-50V, ID=-1.3A, VGS=-10V Gate Source Charge QGS 6.4 (Note 1, 2) 9.2 Gate Drain Charge QGD Turn-ON Delay Time tD(ON) 40 Turn-ON Rise Time tR 68 VDD=-30V, ID=-0.5A, IG=-100µA RG=25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) 220 Turn-OFF Fall-Time tF 70 SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD VGS=0V, IS=-13A -1.4 Maximum Body-Diode Continuous Current IS -13 Maximum Pulsed Drain-Source Diode ISM -52 Forward Current VGS= 0V, IS=13A, dIF/dt=100A/μs 115 Body Diode Reverse Recovery Time tRR (Note 1) Body Diode Reverse Recovery Charge QRR 0.5 Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw V µA µA nA V Ω pF pF pF nC nC nC ns ns ns ns V A A ns nC 2 of 6 QW-R210-016.a 13P10 Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) IRM di/dt Body Diode Reverse Current VDS (D.U.T.) VDD Body Diode Recovery dv/dt Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R210-016.a 13P10 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms VGS Same Type as D.U.T. 50kΩ 12V 0.2μF QG -10V 0.3μF VDS QGS QGD VGS DUT -3mA Charge Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R210-016.a 13P10 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R210-016.a