UNISONIC TECHNOLOGIES CO., LTD UT3437 Preliminary Power MOSFET -1.4A, -150V P-CHANNEL (D-S) POWER MOSFET DESCRIPTION 6 The UTC UT3437 is a P-channel MOSFET, it uses UTC’s advanced technology to provide the customers with low gate charge, etc. The UTC UT3437 is suitable for active clamp circuits in DC/DC power supplies. 5 4 1 2 3 SOT-26 FEATURES * RDS(ON) < 0.75 Ω @ VGS=-10V, ID=-1.4A RDS(ON) < 0.79 Ω @ VGS=-6V, ID=-1A * Low gate charge SYMBOL ORDERING INFORMATION Ordering Number Note: UT3437G-AG6-R Pin Assignment: G: Gate D: Drain Package SOT-26 1 D Pin Assignment 2 3 4 5 D G S D 6 D Packing Tape Reel S: Source MARKING 6 5 4 3437G 1 2 3 www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 7 QW-R210-023.B UT3437 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT -150 V ±20 V TC=25°C -1.4 A ID Continuous Drain Current -1.1 A TC=70°C (TJ=150°C) TA=25°C, t=5s -1.1 (Note 1) A ID -0.88 (Note 1) A TA=70°C, t=5s Pulsed Drain Current IDM -5 A Continuous Source-Drain Diode TC=25°C -2.6 A IS Current TA=25°C, t=5s 1.6 (Note 1) A Avalanche Current IAS 14 A Single-Pulse Avalanche Energy EAS 10 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 3.27 V/ns Maximum Power Dissipation PD 1.1 W Junction Temperature TJ -55 ~ 150 °C Storage Temperature Range TSTG -55 ~ 150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ. 3. L=0.1mH, IAS=14A, VDD=50V, RG=25Ω, Starting TJ = 25°C 4. ISD≤2.0A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C SYMBOL VDSS VGSS THERMAL CHARACTERISTICS PARAMETER SYMBOL Junction to Ambient (Note 1, 2) θJA Junction-to-Case θJC Notes: 1. Surface Mounted on 1" x 1" FR4 board. 2. Maximum under Steady State conditions is 110°C/W. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS 110 30 UNIT °C/W °C/W 2 of 7 QW-R210-023.B UT3437 Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) PARAMETER STATIC PARAMETERS Drain-Source Breakdown Voltage VDSS Temperature Coefficient SYMBOL Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) Temperature Coefficient On-State Drain Current (Note 1) Drain-Source On-State Resistance (Note 1) IGSS BVDSS ∆VDSS/TJ TEST CONDITIONS ID=-250µA, VGS=0V -150 ID=-250µA VDS=-150V, VGS=0V VDS=-150V, VGS=0V, TJ=55°C VGS=±20V, VDS=0V VGS(TH) VDS=VGS, ID=-250µA ∆VGS(TH)/TJ ID=-250µA ID(ON) VDS≥-10V, VGS=-10V VGS=-10V, ID=-1.4A RDS(ON) VGS=-6V, ID=-1A gFS VDS=-10V, ID=-1.4A Forward Transconductance (Note 1) DYNAMIC PARAMETERS (Note 2) Input Capacitance CISS VDS=-25V,VGS=0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS Gate Resistance RG f=1MHz SWITCHING PARAMETERS Total Gate Charge QG VGS=-10V, VDS=-50V, Gate to Source Charge QGS ID=-1.3A, IG=-100µA Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) VDS=-75V, VGS=-10V, Rise Time tR ID=-1.0A, RG=1Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Continuous Source-Drain Diode Current IS TC=25°C Pulse Diode Forward Current ISM Body Diode Voltage VSD IS=-1A,VGS=0V Body Diode Reverse Recovery Time trr IF=-1.2A, dI/dt=100A/µs, TJ=25°C Body Diode Reverse Recovery Charge Qrr Notes: 1. Pulse test; pulse width ≤ 300µs, duty cycle ≤ 2%. 2. Guaranteed by design, not subject to production testing. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP -160 -2 MAX UNIT V mV/°C -1 µA -10 µA ±100 nA -4 5.5 -3 4.5 V mV/°C A 0.75 Ω 0.79 Ω S 500 47 23 8 pF pF pF Ω 32 2.7 3.4 45 40 100 45 nC nC nC ns ns ns ns -0.8 150 180 -1.4 -5 -1.2 A A V ns nC 3 of 7 QW-R210-023.B UT3437 Power MOSFET TEST CIRCUITS AND WAVEFORMS VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R210-023.B UT3437 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms VGS Same Type as D.U.T. 50kΩ 12V 0.2μF QG -10V 0.3μF VDS QGS QGD VGS DUT -3mA Charge Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R210-023.B UT3437 Power MOSFET TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 7 QW-R210-023.B UT3437 Power MOSFET TYPICAL CHARACTERISTICS UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R210-023.B