UNISONIC TECHNOLOGIES CO., LTD UPC8131-C Preliminary POWER MOSFET -10A, -30V SILICON P-CHANNEL MOSFET DESCRIPTION The UTC UPC8131-C is a silicon P-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on-state resistance and low leakage current, etc. The UTC UPC8131-C is suitable for lithium-Ion secondary batteries and power management switches. FEATURES * RDS(ON) < 13.5 mΩ @ VGS=-10V, ID=-5A * Low RDS(ON) * Low leakage current SYMBOL ORDERING INFORMATION Ordering Number Note: UPC8131G-K08-3030-R Pin Assignment: G: Gate D: Drain Package DFN-8(3×3) S: Source 1 S 2 S Pin Assignment 3 4 5 6 S G D D 7 D 8 D Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R210-014.a UPC8131-C Preliminary POWER MOSFET ABSOLUTE MAXIMUM RATING (TA=25°C unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Drain Current(DC) (Note 1) Drain Current (Pulsed) (Note 1) RATINGS UNIT -30 V -25/+20 V -10 A -30 A TC=25°C 20 W Power Dissipation PD t=10s (Note 2) 1.9 W t=10s (Note 3) 0.7 W Single-Pulse Avalanche Energy (Note 4) EAS 65 mJ Avalanche Current IAR -10 A Channel Temperature TCH 150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL RESISTANCES CHARACTERISTICS PARAMETER Junction to Ambient (Note 1a) Junction-to-Case SYMBOL VDSS VGSS ID IDP SYMBOL θJA θJC RATINGS 53 4.3 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) PARAMETER STATIC CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Breakdown Voltage (Note 5) Drain Cut-Off Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-Resistance SYMBOL TEST CONDITIONS MIN BVDSS BVDSX IDSS IGSS ID=-10mA, VGS=0V ID=-10mA, VGS=10V VDS=-30V, VGS=0V VGS=±20 V, VDS=0V -30 -21 VTH VDS=-10V, ID=-0.2mA VGS=-10V, ID=-5A VGS=-4.5V, ID=-5A -0.8 RDS(ON) TYP 13.5 17.6 MAX UNIT -10 ±0.1 V V µA µA -2.0 17.6 23 V mΩ mΩ DYNAMIC PARAMETERS Input Capacitance CISS 1700 VGS=0V, VDS=-10V, f=1.0MHz Output Capacitance COSS 320 Reverse Transfer Capacitance CRSS 280 SWITCHING PARAMETERS Total Gate Charge QG 40 VDD=-24V, VGS=-10V, ID=-10A Gate to Source Charge QGS 4.5 Gate to Drain Charge QGD 11 Turn-ON Delay Time tD(ON) 14 VGS=10V, VDD=15V, ID=13.3A, Rise Time tR 5.2 RGEN=6Ω Turn-OFF Delay Time tD(OFF) 170 Fall-Time tF 52 SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Reverse Drain Current (Pulsed) (Note 1) IDRP -30 Diode Forward Voltage VDSF IDR=-10A, VGS=0V 1.2 Notes: 1. Ensure that the channel temperature does not exceed 150°C. 2. VDD=-24V, TCH=25°C (initial), L=0.5mH, RG=25Ω, IAR=-10A. 3. If a forward bias is applied between gate and source, this device enters BVDSX mode. Note that the drain-source breakdown voltage is lowered in this mode. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw pF pF pF nC nC nC ns ns ns ns A V 2 of 3 QW-R210-014.a UPC8131-C Preliminary POWER MOSFET TEST CIRCUITS AND WAVEFORMS UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R210-014.a