SUM110P06-07L Datasheet

SUM110P06-07L
www.vishay.com
Vishay Siliconix
P-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
ID (A) d
RDS(on) (Ω)
0.0069 at VGS = -10 V
-60
-110
0.0088 at VGS = -4.5 V
• TrenchFET® power MOSFET
• Package with low thermal resistance
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
S
TO-263
G
S
D
Top View
P-Channel MOSFET
G
D
Ordering Information:
SUM110P06-07L-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
-60
Gate-Source Voltage
VGS
± 20
Continuous Drain Current d
(TJ = 175 °C)
TC = 25 °C
TC = 125 °C
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy a
Power Dissipation
ID
IDM
L = 0.1 mH
TC = 25 °C c
TA = 25 °C b
Operating Junction and Storage Temperature Range
V
-110
-95
-240
IAS
-75
EAS
281
PD
UNIT
375
3.75
A
mJ
W
TJ, Tstg
-55 to +175
°C
SYMBOL
TYPICAL
UNIT
RthJA
40
RthJC
0.4
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case
PCB mount b
°C/W
Notes
a. Duty cycle ≤ 1 %.
b. When mounted on 1" square PCB (FR4 material).
c. See SOA curve for voltage derating.
d. Limited by package.
S15-1278-Rev. D, 08-Jun-15
Document Number: 72439
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM110P06-07L
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance a
Dynamic
VDS
VGS = 0 V, ID = -250 μA
-60
-
-
VGS(th)
VDS = VGS, ID = -250 μA
-1
-
-3
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 100
VDS = -60 V, VGS = 0 V
-
-
-1
IDSS
VDS = -60 V, VGS = 0 V, TJ = 125 °C
-
-
-50
VDS = -60 V, VGS = 0 V, TJ = 175 °C
-
-
-250
VDS = -5 V, VGS = -10 V
-120
-
-
VGS = -10 V, ID = -30 A
-
0.0055
0.0069
VGS = -10 V, ID = -30 A, TJ = 125 °C
-
-
0.0115
VGS = -10 V, ID = -30 A, TJ = 175 °C
-
-
0.0138
VGS = -4.5 V, ID = -20 A
-
0.0070
0.0088
VDS = -15 V, ID = -50 A
20
-
-
-
11 400
-
-
1200
-
-
900
-
-
230
345
-
50
-
-
60
-
ID(on)
RDS(on)
gfs
V
nA
μA
A
Ω
S
b
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge c
Qg
Gate-Source Charge c
Qgs
Gate-Drain Charge c
Qgd
Gate Resistance
Turn-On Delay Time c
Rise Time c
Turn-Off Delay Time c
Fall Time c
VGS = 0 V, VDS = -25 V, f = 1 MHz
VDS = -30 V, VGS = -10 V, ID = -110 A
Rg
f = 1 MHz
td(on)
tr
td(off)
VDD = -30 V, RL = 0.27 Ω
ID ≅ -110 A, VGEN = -10 V, Rg = 1 Ω
tf
Drain-Source Body Diode Characteristics (TC = 25 °C
Continuous Current
-
3
-
-
20
30
-
25
40
-
110
200
-
50
100
pF
nC
Ω
ns
b)
IS
-
-
-110
Pulsed Current
ISM
-
-
-240
Forward Voltage a
VSD
-
-1
-1.5
V
-
91
137
ns
Reverse Recovery Time
Peak Reverse Recovery Charge
Reverse Recovery Charge
IF = -85 A, VGS = 0 V
trr
IRM(REC)
Qrr
IF = -85 A, dI/dt = 100 A/μs
A
-
-6
-9
A
-
0.21
0.44
μC
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1278-Rev. D, 08-Jun-15
Document Number: 72439
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM110P06-07L
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
200
200
VGS = 10 V thru 5 V
160
I D - Drain Current (A)
I D - Drain Current (A)
160
4V
120
80
120
80
TC = 125 °C
40
40
25 °C
3V
-55 °C
0
0
0
2
4
6
8
0
10
1
VDS - Drain-to-Source Voltage (V)
3
4
5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
250
0.016
TC = -55 °C
0.014
200
25 °C
150
125 °C
100
50
R DS(on) - On-Resistance ()
g fs - Transconductance (S)
2
0.012
0.010
0.008
VGS = 4.5 V
0.006
VGS = 10 V
0.004
0.002
0
0.000
0
15
30
45
60
75
90
0
20
40
80
100
120
I D - Drain Current (A)
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
20
14 000
12 000
Ciss
V GS - Gate-to-Source Voltage (V)
C - Capacitance (pF)
60
10 000
8000
6000
4000
Coss
2000
Crss
0
VDS = 30 V
ID = 110 A
16
12
8
4
0
0
10
20
30
40
VDS - Drain-to-Source Voltage (V)
Capacitance
S15-1278-Rev. D, 08-Jun-15
50
60
0
50
100
150
200
250
300
350
400
450
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 72439
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM110P06-07L
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2.0
75
R DS(on) - On-Resistance (Normalized)
VGS = 10 V
ID = 30 A
ID = 250 µA
1.7
V(BR)DSS (V)
72
1.4
1.1
0.8
0.5
-50
69
66
63
60
-25
0
25
50
75
100
125
150
175
-50
-25
TJ - Junction Temperature (°C)
150
I D - Drain Current (A)
100
I DAV (A)
200
IAV (A) at TA = 25 °C
75
100
125
150
175
Package Limited
100
50
IAV (A) at TA = 150 °C
0.1
0.00001
50
Drain Source Breakdown vs. Junction Temperature
1000
1
25
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
10
0
0
0.0001
0.001
0.01
0.1
0
1
25
50
75
100
125
150
175
TC - Case Temperature (°C)
tin (s)
Avalanche Current vs. Time
Maximum Avalanche and Drain Current vs. Case Temperature
1000
100
Limited by R(DSon)*
TJ = 150 °C
I D - Drain Current (A)
I S - Source Current (A)
10 µs
TJ = 25 °C
10
1
0.0
0.3
0.6
0.9
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
S15-1278-Rev. D, 08-Jun-15
1.2
100
100 µs
10
1 ms
10 ms
100 ms, DC
1
TC = 25 °C
Single Pulse
0.1
0.1
* VGS
1
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area
Document Number: 72439
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM110P06-07L
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
0.02
t2
1. Duty Cycle, D =
Single Pulse
t1
t2
2. Per Unit Base = RthJA = 62.5 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10 -4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72439.
S15-1278-Rev. D, 08-Jun-15
Document Number: 72439
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-263 (D2PAK): 3-LEAD
-B-
L2
6
E1
K
D4
-A-
c2
D2
D3
A
E
L3
L
D
D1
E3
A
A
b2
b
e
c
Detail “A”
E2
0.010 M A M
2 PL
0°
L4
-5
°
INCHES
L1
DETAIL A (ROTATED 90°)
c*
c
c1
c1
M
b
b1
SECTION A-A
MIN.
MAX.
MIN.
MAX.
A
0.160
0.190
4.064
4.826
b
0.020
0.039
0.508
0.990
b1
0.020
0.035
0.508
0.889
1.397
b2
0.045
0.055
1.143
Thin lead
0.013
0.018
0.330
0.457
Thick lead
0.023
0.028
0.584
0.711
Thin lead
0.013
0.017
0.330
0.431
Thick lead
0.023
0.027
0.584
0.685
c2
0.045
0.055
1.143
1.397
D
0.340
0.380
8.636
9.652
D1
0.220
0.240
5.588
6.096
D2
0.038
0.042
0.965
1.067
D3
0.045
0.055
1.143
1.397
D4
0.044
0.052
1.118
1.321
E
0.380
0.410
9.652
10.414
E1
0.245
-
6.223
-
E2
0.355
0.375
9.017
9.525
E3
0.072
0.078
1.829
1.981
e
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8 mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
Revison: 30-Sep-13
MILLIMETERS
DIM.
0.100 BSC
2.54 BSC
K
0.045
0.055
1.143
1.397
L
0.575
0.625
14.605
15.875
L1
0.090
0.110
2.286
2.794
L2
0.040
0.055
1.016
1.397
L3
0.050
0.070
1.270
1.778
L4
M
0.010 BSC
-
0.254 BSC
0.002
-
0.050
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
1
Document Number: 71198
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AN826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.420
0.355
0.635
(16.129)
(9.017)
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
11-Apr-05
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1
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Revision: 02-Oct-12
1
Document Number: 91000