SUM110P06-07L www.vishay.com Vishay Siliconix P-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A) d RDS(on) (Ω) 0.0069 at VGS = -10 V -60 -110 0.0088 at VGS = -4.5 V • TrenchFET® power MOSFET • Package with low thermal resistance • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S TO-263 G S D Top View P-Channel MOSFET G D Ordering Information: SUM110P06-07L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ± 20 Continuous Drain Current d (TJ = 175 °C) TC = 25 °C TC = 125 °C Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energy a Power Dissipation ID IDM L = 0.1 mH TC = 25 °C c TA = 25 °C b Operating Junction and Storage Temperature Range V -110 -95 -240 IAS -75 EAS 281 PD UNIT 375 3.75 A mJ W TJ, Tstg -55 to +175 °C SYMBOL TYPICAL UNIT RthJA 40 RthJC 0.4 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case PCB mount b °C/W Notes a. Duty cycle ≤ 1 %. b. When mounted on 1" square PCB (FR4 material). c. See SOA curve for voltage derating. d. Limited by package. S15-1278-Rev. D, 08-Jun-15 Document Number: 72439 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM110P06-07L www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Dynamic VDS VGS = 0 V, ID = -250 μA -60 - - VGS(th) VDS = VGS, ID = -250 μA -1 - -3 IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 VDS = -60 V, VGS = 0 V - - -1 IDSS VDS = -60 V, VGS = 0 V, TJ = 125 °C - - -50 VDS = -60 V, VGS = 0 V, TJ = 175 °C - - -250 VDS = -5 V, VGS = -10 V -120 - - VGS = -10 V, ID = -30 A - 0.0055 0.0069 VGS = -10 V, ID = -30 A, TJ = 125 °C - - 0.0115 VGS = -10 V, ID = -30 A, TJ = 175 °C - - 0.0138 VGS = -4.5 V, ID = -20 A - 0.0070 0.0088 VDS = -15 V, ID = -50 A 20 - - - 11 400 - - 1200 - - 900 - - 230 345 - 50 - - 60 - ID(on) RDS(on) gfs V nA μA A Ω S b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Qg Gate-Source Charge c Qgs Gate-Drain Charge c Qgd Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Time c Fall Time c VGS = 0 V, VDS = -25 V, f = 1 MHz VDS = -30 V, VGS = -10 V, ID = -110 A Rg f = 1 MHz td(on) tr td(off) VDD = -30 V, RL = 0.27 Ω ID ≅ -110 A, VGEN = -10 V, Rg = 1 Ω tf Drain-Source Body Diode Characteristics (TC = 25 °C Continuous Current - 3 - - 20 30 - 25 40 - 110 200 - 50 100 pF nC Ω ns b) IS - - -110 Pulsed Current ISM - - -240 Forward Voltage a VSD - -1 -1.5 V - 91 137 ns Reverse Recovery Time Peak Reverse Recovery Charge Reverse Recovery Charge IF = -85 A, VGS = 0 V trr IRM(REC) Qrr IF = -85 A, dI/dt = 100 A/μs A - -6 -9 A - 0.21 0.44 μC Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1278-Rev. D, 08-Jun-15 Document Number: 72439 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM110P06-07L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 200 200 VGS = 10 V thru 5 V 160 I D - Drain Current (A) I D - Drain Current (A) 160 4V 120 80 120 80 TC = 125 °C 40 40 25 °C 3V -55 °C 0 0 0 2 4 6 8 0 10 1 VDS - Drain-to-Source Voltage (V) 3 4 5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 250 0.016 TC = -55 °C 0.014 200 25 °C 150 125 °C 100 50 R DS(on) - On-Resistance () g fs - Transconductance (S) 2 0.012 0.010 0.008 VGS = 4.5 V 0.006 VGS = 10 V 0.004 0.002 0 0.000 0 15 30 45 60 75 90 0 20 40 80 100 120 I D - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 20 14 000 12 000 Ciss V GS - Gate-to-Source Voltage (V) C - Capacitance (pF) 60 10 000 8000 6000 4000 Coss 2000 Crss 0 VDS = 30 V ID = 110 A 16 12 8 4 0 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) Capacitance S15-1278-Rev. D, 08-Jun-15 50 60 0 50 100 150 200 250 300 350 400 450 Qg - Total Gate Charge (nC) Gate Charge Document Number: 72439 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM110P06-07L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2.0 75 R DS(on) - On-Resistance (Normalized) VGS = 10 V ID = 30 A ID = 250 µA 1.7 V(BR)DSS (V) 72 1.4 1.1 0.8 0.5 -50 69 66 63 60 -25 0 25 50 75 100 125 150 175 -50 -25 TJ - Junction Temperature (°C) 150 I D - Drain Current (A) 100 I DAV (A) 200 IAV (A) at TA = 25 °C 75 100 125 150 175 Package Limited 100 50 IAV (A) at TA = 150 °C 0.1 0.00001 50 Drain Source Breakdown vs. Junction Temperature 1000 1 25 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 10 0 0 0.0001 0.001 0.01 0.1 0 1 25 50 75 100 125 150 175 TC - Case Temperature (°C) tin (s) Avalanche Current vs. Time Maximum Avalanche and Drain Current vs. Case Temperature 1000 100 Limited by R(DSon)* TJ = 150 °C I D - Drain Current (A) I S - Source Current (A) 10 µs TJ = 25 °C 10 1 0.0 0.3 0.6 0.9 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage S15-1278-Rev. D, 08-Jun-15 1.2 100 100 µs 10 1 ms 10 ms 100 ms, DC 1 TC = 25 °C Single Pulse 0.1 0.1 * VGS 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area Document Number: 72439 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM110P06-07L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 0.02 t2 1. Duty Cycle, D = Single Pulse t1 t2 2. Per Unit Base = RthJA = 62.5 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10 -4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72439. S15-1278-Rev. D, 08-Jun-15 Document Number: 72439 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-263 (D2PAK): 3-LEAD -B- L2 6 E1 K D4 -A- c2 D2 D3 A E L3 L D D1 E3 A A b2 b e c Detail “A” E2 0.010 M A M 2 PL 0° L4 -5 ° INCHES L1 DETAIL A (ROTATED 90°) c* c c1 c1 M b b1 SECTION A-A MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 1.397 b2 0.045 0.055 1.143 Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. Revison: 30-Sep-13 MILLIMETERS DIM. 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.254 BSC 0.002 - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 1 Document Number: 71198 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000