SUM110P06-07L Vishay Siliconix P-Channel 60-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) −60 ID (A)d 0.0069 @ VGS = −10 V −110 0.0088 @ VGS = −4.5 V −110 D TrenchFETr Power MOSFET D New Package with Low Thermal Resistance APPLICATIONS D Automotive − 12-V Boardnet − High-Side Switches − Motor Drives S TO-263 G G D S Top View D Ordering Information: SUM110P06-07L SUM110P06-07L—E3 (Lead Free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS −60 Gate-Source Voltage VGS "20 TC = 25_C Continuous Drain Currentd (TJ = 175_C) TC = 125_C Pulsed Drain Current Avalanche Current Single Pulse Avalanche L = 0.1 0 1 mH Energya TC = 25_C Power Dissipation TA = 25_Cb Operating Junction and Storage Temperature Range ID V −110 −95 IDM −240 IAS −75 EAS 281 PD Unit 375c 3.75 A mJ W TJ, Tstg −55 to 175 _C Symbol Limit Unit Junction-to-Ambient PCB Mountb RthJA 40 Junction-to-Case RthJC 0.4 THERMAL RESISTANCE RATINGS Parameter _C/W Notes: a. Duty cycle v 1%. b. When mounted on 1” square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Limited by package. Document Number: 72439 S-40842—Rev. B, 03-May-04 www.vishay.com 1 SUM110P06-07L Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = −250 mA −60 VGS(th) VDS = VGS, ID = −250 mA −1 IGSS VDS = 0 V, VGS = "20 V "100 VDS = −60 V, VGS = 0 V −1 VDS = −60 V, VGS = 0 V, TJ = 125_C −50 VDS = −60 V, VGS = 0 V, TJ = 175_C −250 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage g Drain Current On-State Drain Currenta IDSS ID(on) VDS = −5 V, VGS = −10 V −120 VGS = −10 V, ID = −30 A Drain Source On-State Drain-Source On State Resistancea rDS(on) DS( ) gfs 0.0055 nA mA m 0.0069 0.0115 VGS = −10 V, ID = −30 A, TJ = 175_C 0.0138 VDS = −15 V, ID = −50 A V A VGS = −10 V, ID = −30 A, TJ = 125_C VGS = −4.5 V, ID = −20 A Forward Transconductancea −3 0.007 W 0.0088 20 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss 900 Total Gate Chargec Qg 230 Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Rg Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec 11400 VGS = 0 V, VDS = −25 V, f = 1 MHz VDS = −30 V,, VGS = −10 V,, ID = −110 A 1200 pF 345 50 nC 60 f = 1.0 MHz 3 td(on) 20 30 tr VDD = −30 30 V, RL = 0.27 W 160 240 td(off) ID ] −110 A, VGEN = −10 V, Rg = 2.5 W 200 300 240 360 tf W ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Is −110 Pulsed Current ISM −240 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = −85 A, VGS = 0 V trr IRM(REC) Qrr IF = −85 A,, di/dt = 100 A/ms m A −1.0 −1.5 V 65 100 ns −4.2 −6.3 A 0.14 0.32 mC Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72439 S-40842—Rev. B, 03-May-04 SUM110P06-07L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 200 200 VGS = 10 thru 5 V 160 4V I D − Drain Current (A) I D − Drain Current (A) 160 120 80 40 120 80 TC = 125_C 40 25_C 3V −55_C 0 0 0 2 4 6 8 10 0 1 VDS − Drain-to-Source Voltage (V) Transconductance 4 5 On-Resistance vs. Drain Current 0.016 TC = −55_C 200 0.014 r DS(on) − On-Resistance ( W ) 25_C 150 125_C 100 50 0 0.012 0.010 0.008 VGS = 4.5 V 0.006 VGS = 10 V 0.004 0.002 0.000 0 15 30 45 60 75 0 90 20 40 ID − Drain Current (A) 12000 V GS − Gate-to-Source Voltage (V) 10000 8000 6000 Coss Crss 2000 80 100 120 Gate Charge 20 Ciss 4000 60 ID − Drain Current (A) Capacitance 14000 C − Capacitance (pF) 3 VGS − Gate-to-Source Voltage (V) 250 g fs − Transconductance (S) 2 0 VDS = 30 V ID = 110 A 16 12 8 4 0 0 10 20 30 40 50 VDS − Drain-to-Source Voltage (V) Document Number: 72439 S-40842—Rev. B, 03-May-04 60 0 50 100 150 200 250 300 350 400 450 Qg − Total Gate Charge (nC) www.vishay.com 3 SUM110P06-07L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rDS(on) − On-Resiistance (Normalized) 1.7 On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 100 VGS = 10 V ID = 30 A I S − Source Current (A) 2.0 1.4 1.1 0.8 0.5 −50 −25 0 25 50 75 100 125 150 TJ = 150_C 1 175 0.0 0.3 TJ − Junction Temperature (_C) 1000 TJ = 25_C 10 0.6 0.9 1.2 VSD − Source-to-Drain Voltage (V) Drain Source Breakdown vs. Junction Temperature Avalanche Current vs. Time 75 72 ID = 250 mA V (BR)DSS (V) I Dav (a) 100 IAV (A) @ TA = 25_C 10 69 66 1 IAV (A) @ TA = 150_C 63 0.1 0.00001 0.0001 0.001 0.01 tin (Sec) www.vishay.com 4 0.1 1 60 −50 −25 0 25 50 75 100 125 150 175 TJ − Junction Temperature (_C) Document Number: 72439 S-40842—Rev. B, 03-May-04 SUM110P06-07L Vishay Siliconix THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 1000 200 Limited by rDS(on) 10 ms Limited by Package 100 50 0 1 ms 10 1 10 ms 100 ms, dc TC = 25_C Single Pulse 0.1 0 25 50 75 100 125 150 175 0.1 10 100 Normalized Thermal Transient Impedance, Junction-to-Case 2 1 1 VDS − Drain-to-Source Voltage (V) TC − Case Temperature (_C) Normalized Effective Transient Thermal Impedance 100 ms 100 I D − Drain Current (A) I D − Drain Current (A) 150 Duty Cycle = 0.5 0.2 Notes: PDM 0.1 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 Single Pulse t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) Document Number: 72439 S-40842—Rev. B, 03-May-04 www.vishay.com 5