SUM110P04-04L Datasheet

SUM110P04-04L
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Vishay Siliconix
P-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) ()
ID (A) d
0.0042 at VGS = -10 V
-110
0.0062 at VGS = -4.5 V
-110
VDS (V)
-40
• TrenchFET® Power MOSFET
• Low thermal resistance
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
TO-263
S
G
S
D
Top View
P-Channel MOSFET
G
D
Ordering Information:
SUM110P04-04L-E3 (Lead (Pb)-free)


ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
-40
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 175 °C) d
TC = 25 °C
TC = 125 °C
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy a
Power Dissipation
Operating Junction and Storage Temperature Range
ID
IDM
L = 0.1 mH
TC = 25 °C
TA = 25 °C b
V
-110
-110
-240
IAS
-75
EAS
281
PD
UNIT
375
A
mJ
c
3.75
W
TJ, Tstg
-55 to 175
°C
UNIT
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
Junction-to-Ambient PCB Mount b
RthJA
40
Junction-to-Case
RthJC
0.4
°C/W
Notes
a. Duty cycle  1 %.
b. When mounted on 1" square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Limited by package.
S13-2478-Rev. D, 09-Dec-13
Document Number: 72437
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM110P04-04L
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Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
VDS
VGS = 0 V, ID = -250 μA
-40
VGS(th)
VDS = VGS, ID = -250 μA
-1
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
VDS = -40 V, VGS = 0 V
-1
IDSS
VDS = -40 V, VGS = 0 V, TJ = 125 °C
-50
VDS = -40 V, VGS = 0 V, TJ = 175 °C
-250
ID(on)
VDS = -5 V, VGS = -10 V
-120
VGS = -10 V, ID = -30 A
Drain-Source On-State Resistance a
RDS(on)
0.0063
VGS = -10 V, ID = -30 A, TJ = 175 °C
0.0076
VDS = -15 V, ID = -30 A
nA
μA
0.0042
VGS = -10 V, ID = -30 A, TJ = 125 °C
gfs
V
A
0.0034
VGS = -4.5 V, ID = -20 A
Forward Transconductance a
-3
0.005

0.0062
20
S
Dynamic b
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge c
Qg
Gate-Source Charge c
Qgs
Gate-Drain Charge c
Qgd
Gate Resistance
Turn-On Delay Time c
Rise Time c
Turn-Off Delay Time c
Fall Time c
11 200
VGS = 0 V, VDS = -25 V, f = 1 MHz
235
VDS = -20 V, VGS = -10 V, ID = -110 A
nC
65
Rg
3
25
tr
350
45
td(on)
td(off)
pF
1200
VDD = -20 V, RL = 0.18 
ID -110 A, VGEN = -10 V, Rg = 2.5 
tf
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)
Continuous Current
1650

40
30
45
190
300
110
165
b
IS
-110
Pulsed Current
ISM
-240
Forward Voltage a
VSD
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = -85 A, VGS = 0 V
trr
IRM(REC)
Qrr
ns
IF = -85 A, dI/dt = 100 A/μs
A
-1
-1.5
V
65
100
ns
-3.7
-5.6
A
0.12
0.28
μC
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-2478-Rev. D, 09-Dec-13
Document Number: 72437
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM110P04-04L
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
240
200
VGS = 10 V thru 5 V
200
175
160
I D - Drain Current (A)
I D - Drain Current (A)
150
4V
120
80
125
100
75
TC = 125 °C
50
25 °C
40
25
3V
- 55 °C
0
0.0
0
0
2
4
6
8
10
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
4.0
4.5
0.010
240
200
25 °C
160
125 °C
RDS(on) - On-Resistance ()
g fs - Transconductance (S)
TC = - 55 °C
120
80
40
0.008
0.006
VGS = 4.5 V
VGS = 10 V
0.004
0.002
0.000
0
0
15
30
45
60
75
0
90
20
40
80
100
120
ID - Drain Current (A)
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
20
14 000
12 000
Ciss
V GS - Gate-to-Source Voltage (V)
C - Capacitance (pF)
60
10 000
8000
6000
4000
Coss
Crss
2000
0
VDS = 20 V
ID = 110 A
16
12
8
4
0
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
Capacitance
S13-2478-Rev. D, 09-Dec-13
35
40
0
50
100
150
200
250
300
350
400
450
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 72437
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM110P04-04L
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
VGS = 10 V
ID = 30 A
1.7
IS - Source Current (A)
R DS(on) - On-Resistance (Normalized)
2.0
1.4
1.1
TJ = 25 °C
TJ = 150 °C
10
0.8
0.5
1
- 50
- 25
0
25
50
75
100
125
150
0.0
175
0.3
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1000
48
ID = 250 µA
46
V DS (V)
I Dav (A)
100
IAV (A) at TA = 25 °C
10
44
42
1
IAV (A) at TA = 150 °C
40
38
0.1
0.0001
0.001
0.01
0.1
1
tin (s)
Avalanche Current vs. Time
S13-2478-Rev. D, 09-Dec-13
10
- 50
- 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
Document Number: 72437
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM110P04-04L
www.vishay.com
Vishay Siliconix
THERMAL RATINGS
1000
300
Limited by RDS(on)*
10 µs
100 µs
100
I D - Drain Current (A)
ID - Drain Current (A)
250
200
Limited
by Package
150
100
1 ms
10
1
50
0
0
25
50
75
100
125
150
0.1
0.1
175
TC - Case Temperature (°C)
Maximum Avalanche and Drain Current
vs. Case Temperature
10 ms
100 ms
DC
TC = 25 °C
Single Pulse
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
PDM
0.1
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 62.5 °C/W
Single Pulse
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10- 4
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case

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Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72437.
S13-2478-Rev. D, 09-Dec-13
Document Number: 72437
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-263 (D2PAK): 3-LEAD
-B-
L2
6
E1
K
D4
-A-
c2
D2
D3
A
E
L3
L
D
D1
E3
A
A
b2
b
e
c
Detail “A”
E2
0.010 M A M
2 PL
0°
L4
-5
°
INCHES
L1
DETAIL A (ROTATED 90°)
c*
c
c1
c1
M
b
b1
SECTION A-A
MIN.
MAX.
MIN.
MAX.
A
0.160
0.190
4.064
4.826
b
0.020
0.039
0.508
0.990
b1
0.020
0.035
0.508
0.889
1.397
b2
0.045
0.055
1.143
Thin lead
0.013
0.018
0.330
0.457
Thick lead
0.023
0.028
0.584
0.711
Thin lead
0.013
0.017
0.330
0.431
Thick lead
0.023
0.027
0.584
0.685
c2
0.045
0.055
1.143
1.397
D
0.340
0.380
8.636
9.652
D1
0.220
0.240
5.588
6.096
D2
0.038
0.042
0.965
1.067
D3
0.045
0.055
1.143
1.397
D4
0.044
0.052
1.118
1.321
E
0.380
0.410
9.652
10.414
E1
0.245
-
6.223
-
E2
0.355
0.375
9.017
9.525
E3
0.072
0.078
1.829
1.981
e
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8 mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
Revison: 30-Sep-13
MILLIMETERS
DIM.
0.100 BSC
2.54 BSC
K
0.045
0.055
1.143
1.397
L
0.575
0.625
14.605
15.875
L1
0.090
0.110
2.286
2.794
L2
0.040
0.055
1.016
1.397
L3
0.050
0.070
1.270
1.778
L4
M
0.010 BSC
-
0.254 BSC
0.002
-
0.050
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
1
Document Number: 71198
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AN826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.420
0.355
0.635
(16.129)
(9.017)
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
11-Apr-05
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1
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Revision: 02-Oct-12
1
Document Number: 91000