SUM110P04-04L www.vishay.com Vishay Siliconix P-Channel 40 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A) d 0.0042 at VGS = -10 V -110 0.0062 at VGS = -4.5 V -110 VDS (V) -40 • TrenchFET® Power MOSFET • Low thermal resistance • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TO-263 S G S D Top View P-Channel MOSFET G D Ordering Information: SUM110P04-04L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) d TC = 25 °C TC = 125 °C Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energy a Power Dissipation Operating Junction and Storage Temperature Range ID IDM L = 0.1 mH TC = 25 °C TA = 25 °C b V -110 -110 -240 IAS -75 EAS 281 PD UNIT 375 A mJ c 3.75 W TJ, Tstg -55 to 175 °C UNIT THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT Junction-to-Ambient PCB Mount b RthJA 40 Junction-to-Case RthJC 0.4 °C/W Notes a. Duty cycle 1 %. b. When mounted on 1" square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Limited by package. S13-2478-Rev. D, 09-Dec-13 Document Number: 72437 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM110P04-04L www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a VDS VGS = 0 V, ID = -250 μA -40 VGS(th) VDS = VGS, ID = -250 μA -1 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = -40 V, VGS = 0 V -1 IDSS VDS = -40 V, VGS = 0 V, TJ = 125 °C -50 VDS = -40 V, VGS = 0 V, TJ = 175 °C -250 ID(on) VDS = -5 V, VGS = -10 V -120 VGS = -10 V, ID = -30 A Drain-Source On-State Resistance a RDS(on) 0.0063 VGS = -10 V, ID = -30 A, TJ = 175 °C 0.0076 VDS = -15 V, ID = -30 A nA μA 0.0042 VGS = -10 V, ID = -30 A, TJ = 125 °C gfs V A 0.0034 VGS = -4.5 V, ID = -20 A Forward Transconductance a -3 0.005 0.0062 20 S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Qg Gate-Source Charge c Qgs Gate-Drain Charge c Qgd Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Time c Fall Time c 11 200 VGS = 0 V, VDS = -25 V, f = 1 MHz 235 VDS = -20 V, VGS = -10 V, ID = -110 A nC 65 Rg 3 25 tr 350 45 td(on) td(off) pF 1200 VDD = -20 V, RL = 0.18 ID -110 A, VGEN = -10 V, Rg = 2.5 tf Source-Drain Diode Ratings and Characteristics (TC = 25 °C) Continuous Current 1650 40 30 45 190 300 110 165 b IS -110 Pulsed Current ISM -240 Forward Voltage a VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = -85 A, VGS = 0 V trr IRM(REC) Qrr ns IF = -85 A, dI/dt = 100 A/μs A -1 -1.5 V 65 100 ns -3.7 -5.6 A 0.12 0.28 μC Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-2478-Rev. D, 09-Dec-13 Document Number: 72437 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM110P04-04L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 240 200 VGS = 10 V thru 5 V 200 175 160 I D - Drain Current (A) I D - Drain Current (A) 150 4V 120 80 125 100 75 TC = 125 °C 50 25 °C 40 25 3V - 55 °C 0 0.0 0 0 2 4 6 8 10 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 4.0 4.5 0.010 240 200 25 °C 160 125 °C RDS(on) - On-Resistance () g fs - Transconductance (S) TC = - 55 °C 120 80 40 0.008 0.006 VGS = 4.5 V VGS = 10 V 0.004 0.002 0.000 0 0 15 30 45 60 75 0 90 20 40 80 100 120 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 20 14 000 12 000 Ciss V GS - Gate-to-Source Voltage (V) C - Capacitance (pF) 60 10 000 8000 6000 4000 Coss Crss 2000 0 VDS = 20 V ID = 110 A 16 12 8 4 0 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) Capacitance S13-2478-Rev. D, 09-Dec-13 35 40 0 50 100 150 200 250 300 350 400 450 Qg - Total Gate Charge (nC) Gate Charge Document Number: 72437 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM110P04-04L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 VGS = 10 V ID = 30 A 1.7 IS - Source Current (A) R DS(on) - On-Resistance (Normalized) 2.0 1.4 1.1 TJ = 25 °C TJ = 150 °C 10 0.8 0.5 1 - 50 - 25 0 25 50 75 100 125 150 0.0 175 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1000 48 ID = 250 µA 46 V DS (V) I Dav (A) 100 IAV (A) at TA = 25 °C 10 44 42 1 IAV (A) at TA = 150 °C 40 38 0.1 0.0001 0.001 0.01 0.1 1 tin (s) Avalanche Current vs. Time S13-2478-Rev. D, 09-Dec-13 10 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Document Number: 72437 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM110P04-04L www.vishay.com Vishay Siliconix THERMAL RATINGS 1000 300 Limited by RDS(on)* 10 µs 100 µs 100 I D - Drain Current (A) ID - Drain Current (A) 250 200 Limited by Package 150 100 1 ms 10 1 50 0 0 25 50 75 100 125 150 0.1 0.1 175 TC - Case Temperature (°C) Maximum Avalanche and Drain Current vs. Case Temperature 10 ms 100 ms DC TC = 25 °C Single Pulse 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: PDM 0.1 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 62.5 °C/W Single Pulse 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72437. S13-2478-Rev. D, 09-Dec-13 Document Number: 72437 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-263 (D2PAK): 3-LEAD -B- L2 6 E1 K D4 -A- c2 D2 D3 A E L3 L D D1 E3 A A b2 b e c Detail “A” E2 0.010 M A M 2 PL 0° L4 -5 ° INCHES L1 DETAIL A (ROTATED 90°) c* c c1 c1 M b b1 SECTION A-A MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 1.397 b2 0.045 0.055 1.143 Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. Revison: 30-Sep-13 MILLIMETERS DIM. 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.254 BSC 0.002 - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 1 Document Number: 71198 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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