SUM70N04-07L Vishay Siliconix N-Channel 40-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) ID (A) 0.0074 at VGS = 10 V 70a 0.011 at VGS = 4.5 V 67 • TrenchFET® Power MOSFET • 175 °C Junction Temperature • Low Threshold Available RoHS* COMPLIANT APPLICATIONS • Motor Control D TO-263 G G D S S Top View N-Channel MOSFET Ordering Information: SUM70N04-07L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb L = 0.1 mH TC = 25 °C TA = 25 °C d Operating Junction and Storage Temperature Range ID Unit V 70a 47 IDM 120 IAR 40 EAR 80 A mJ c PD 100 3.75 W TJ, Tstg - 55 to 175 °C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient PCB Mountd Junction-to-Case RthJA 40 RthJC 1.4 °C/W Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for voltage derating. d. When Mounted on 1" square PCB (FR-4 material). * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72345 S-80274-Rev. B, 11-Feb-08 www.vishay.com 1 SUM70N04-07L Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. V(BR)DSS VDS = 0 V, ID = 250 µA 40 VGS(th) VDS = VGS, ID = 250 µA 1 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS 100 VDS = 32 V, VGS = 0 V 1 VDS = 32 V, VGS = 0 V, TJ = 125 °C 50 VDS = 32 V, VGS = 0 V, TJ = 175 °C 250 VDS ≥ 5 V, VGS = 10 V ID(on) Drain-Source On-State Resistancea 3 rDS(on) 100 0.006 0.0074 VGS = 4.5 V, ID = 10 A 0.0085 0.011 VGS = 10 V, ID = 30 A, TJ = 125 °C Forward Transconductance gfs VDS = 15 V, ID = 30 A nA µA A VGS = 10 V, ID = 30 A 0.012 VGS = 10 V, ID = 30 A, TJ = 175 °C a V Ω 0.015 20 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg c 2800 VGS = 0 V, VDS = 25 V, f = 1 MHz 190 50 Gate-Source Charge Qgs Gate-Drain Chargec Qgd 10 RG 2.0 Gate Resistance Turn-On Delay Time c Rise Timec Turn-Off Delay Timec Fall Timec VDS = 20 V, VGS = 10 V, ID = 50 A td(on) tr td(off) pF 320 VDD = 20 V, RL = 0.4 Ω ID ≅ 50 A, VGEN = 10 V, RG = 2.5 Ω tf 75 nC 10 Ω 11 20 20 30 40 60 15 25 ns Source-Drain Diode Ratings and Characteristics TC = 25 °Cb IS 66 Pulsed Current ISM 100 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 50 A, VGS = 0 V trr IRM(REC) Qrr IF = 50 A, di/dt = 100 A/µs A 1.0 1.5 V 30 50 ns 1.6 2.4 A 0.024 0.06 µC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72345 S-80274-Rev. B, 11-Feb-08 SUM70N04-07L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 100 VGS = 10 thru 5 V 80 4V I D - Drain Current (A) I D - Drain Current (A) 80 60 40 20 60 40 TC = 125 °C 20 25 °C 3V 0 0 1 2 3 4 5 0 0.0 6 0.5 1.0 1.5 2.0 - 55 °C 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 150 4.0 4.5 0.016 TC = - 55 °C 25 °C r DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 120 125 °C 90 60 VGS = 4.5 V 0.008 VGS = 10 V 0.004 30 0.000 0 0 10 20 30 40 50 0 60 20 40 60 80 I D - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 100 10 VGS - Gate-to-Source Voltage (V) 4000 3200 C - Capacitance (pF) 0.012 Ciss 2400 1600 800 Coss Crss 0 0 VDS = 20 V ID = 50 A 8 6 4 2 0 8 16 24 32 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 72345 S-80274-Rev. B, 11-Feb-08 40 0 10 20 30 40 50 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 SUM70N04-07L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 100 VGS = 10 V ID = 20 A I S - Source Current (A) (Normalized) r DS(on) - On-Resistance 1.7 1.4 1.1 TJ = 150 °C TJ = 25 °C 10 0.8 0.5 - 50 1 - 25 0 25 50 75 100 125 150 175 0.3 0 0.6 0.9 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1.2 54 52 ID = 10 mA V(BR)DSS (V) 50 48 46 44 42 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature www.vishay.com 4 Document Number: 72345 S-80274-Rev. B, 11-Feb-08 SUM70N04-07L Vishay Siliconix THERMAL RATINGS 1000 100 80 I D - Drain Current (A) I D - Drain Current (A) 100 60 Limited by Package 40 10 µs 100 µs Limited by rDS(on)* 10 10 ms DC, 100 ms 1 20 0 0 25 50 75 100 125 150 TC = 25 °C Single Pulse 0.1 0.1 175 TC - Case Temperature (°C) 1 * VGS Maximum Avalanche and Drain Current vs. Case Temperature 1 ms 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72345. Document Number: 72345 S-80274-Rev. B, 11-Feb-08 www.vishay.com 5 Package Information www.vishay.com Vishay Siliconix TO-263 (D2PAK): 3-LEAD -B- L2 6 E1 K D4 -A- c2 D2 D3 A E L3 L D D1 E3 A A b2 b e c Detail “A” E2 0.010 M A M 2 PL 0° L4 -5 ° INCHES L1 DETAIL A (ROTATED 90°) c* c c1 c1 M b b1 SECTION A-A MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 1.397 b2 0.045 0.055 1.143 Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. Revison: 30-Sep-13 MILLIMETERS DIM. 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.254 BSC 0.002 - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 1 Document Number: 71198 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000