DF N1 01 0B -6 BC847QAPN 45 V, 100 mA NPN/PNP general-purpose transistor 8 July 2015 Product data sheet 1. General description NPN/PNP general-purpose transistor in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • • • • Reduces component count Reduces pick and place costs AEC-Q101 qualified Low package height of 0.37 mm 3. Applications • • General-purpose switching and amplification Mobile applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit - - 45 V - - 100 mA 200 - 450 Per transistor; for the PNP transistor with negative polarity VCEO collector-emitter voltage IC collector current open base Per transistor; for the PNP transistor with negative polarity hFE DC current gain VCE = 5 V; IC = 2 mA; Tamb = 25 °C Scan or click this QR code to view the latest information for this product BC847QAPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 E1 Simplified outline Graphic symbol emitter TR1 C1 1 2 B1 base TR1 3 C2 collector TR2 4 E2 emitter TR2 5 B2 base TR2 6 C1 collector TR1 Transparent top view 7 C1 collector TR1 DFN1010B-6 (SOT1216) 8 C2 collector TR2 7 2 3 5 8 B2 E2 6 TR2 TR1 4 E1 B1 C2 sym139 6. Ordering information Table 3. Ordering information Type number Package BC847QAPN Name Description Version DFN1010B-6 DFN1010B-6: plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals SOT1216 7. Marking Table 4. Marking codes Type number Marking code BC847QAPN 01 00 00 MARKING CODE (EXAMPLE) READING DIRECTION MARK-FREE AREA PIN 1 INDICATION MARK READING EXAMPLE: YEAR DATE CODE 11 01 10 Fig. 1. aaa-007665 DFN1010B-6 (SOT1216) binary marking code description BC847QAPN Product data sheet All information provided in this document is subject to legal disclaimers. 8 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 14 BC847QAPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor; for the PNP transistor with negative polarity VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 45 V VEBO emitter-base voltage open collector - 6 V IC collector current - 100 mA ICM peak collector current - 200 mA IBM peak base current - 100 mA Ptot total power dissipation Tamb ≤ 25 °C [1] - 230 mW Ptot total power dissipation Tamb ≤ 25 °C [1] - 350 mW Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C single pulse; tp ≤ 1 ms Per device [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. aaa-007377 400 Ptot (mW) 300 200 100 0 -75 -25 25 75 125 175 Tamb (°C) FR4 PCB, standard footprint Fig. 2. Per device: Power derating curve BC847QAPN Product data sheet All information provided in this document is subject to legal disclaimers. 8 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 14 BC847QAPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient in free air thermal resistance from junction to ambient in free air Min Typ Max Unit [1] - - 543 K/W [1] - - 357 K/W Per transistor Rth(j-a) Per device Rth(j-a) [1] 103 Zth(j-a) (K/W) Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. aaa-007378 duty cycle = 0.75 1 0.5 0.33 0.2 102 0.1 0.05 10 0.02 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BC847QAPN Product data sheet All information provided in this document is subject to legal disclaimers. 8 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 14 BC847QAPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Per transistor; for the PNP transistor with negative polarity collector-base cut-off current VCB = 30 V; IE = 0 A; Tamb = 25 °C - - 15 nA VCB = 30 V; IE = 0 A; Tj = 150 °C - - 5 µA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 °C - - 100 nA hFE DC current gain VCE = 5 V; IC = 2 mA; Tamb = 25 °C 200 - 450 VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C - - 100 mV IC = 100 mA; IB = 5 mA; pulsed; - - 300 mV - 760 - mV - 900 - mV VCE = 5 V; IC = 2 mA; Tamb = 25 °C 600 660 725 mV VCE = 5 V; IC = 10 mA; Tamb = 25 °C - 710 820 mV VCB = 10 V; IE = 0 A; ie = 0 A; - - 4 pF 100 - - MHz - - 10 dB - 11 - pF - 10 - pF ICBO tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C VBEsat base-emitter saturation IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C voltage IC = 100 mA; IB = 5 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C VBE Cc base-emitter voltage collector capacitance f = 1 MHz; Tamb = 25 °C fT transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 °C NF noise figure VCE = 5 V; IC = 0.2 mA; RS = 2 kΩ; f = 1 MHz; B = 200 Hz; Tamb = 25 °C TR1 (NPN) Ce emitter capacitance VEB = 0.5 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 °C TR2 (PNP) Ce emitter capacitance VEB = -0.5 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 °C BC847QAPN Product data sheet All information provided in this document is subject to legal disclaimers. 8 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 14 BC847QAPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor mgt727 600 006aab422 0.20 hFE IB (mA) = 4.0 IC (A) 500 0.15 400 3.6 3.2 2.8 2.4 2.0 1.6 1.2 (1) 300 0.8 0.10 0.4 (2) 200 0.05 (3) 100 0 10-1 1 102 10 IC (mA) 0 103 1 2 3 4 VCE (V) 5 Tamb = 25 °C VCE = 5 V (1) Tamb = 150 °C Fig. 5. (2) Tamb = 25 °C NPN transistor: Collector current as a function of collector-emitter voltage; typical values (3) Tamb = −55 °C Fig. 4. 0 NPN transistor: DC current gain as a function of collector current; typical values mgt728 1200 VBE (mV) 1000 006aab423 1.2 VBEsat (V) 1.0 (1) (1) 800 0.8 (2) (2) 600 0.6 (3) 400 0.4 200 0 10- 2 10- 1 1 10 0.2 10- 1 102 103 I C (mA) 102 IC (mA) 103 (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 150 °C (3) Tamb = 150 °C NPN transistor: Base-emitter voltage as a function of collector current; typical values Product data sheet 10 (1) Tamb = -55 °C (1) Tamb = -55 °C BC847QAPN 1 IC/IB = 20 VCE = 5 V Fig. 6. (3) Fig. 7. NPN transistor: Collector-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 8 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 14 BC847QAPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor mgt729 104 006aab424 109 VCEsat (mV) fT (Hz) 103 108 102 (1) (3) (2) 10 10- 1 1 10 102 I C (mA) 107 10- 1 103 10 IC (mA) 102 Tamb = 25 °C; IC/IB = 20 VCE = 5 V; (1) Tamb = 150 °C f = 100 MHz (2) Tamb = 25 °C (3) Tamb = -55 °C Fig. 8. 1 Fig. 9. NPN transistor: Collector-emitter saturation voltage as a function of collector current; typical values 006aab425 600 006aab426 - 0.20 IB (mA) = - 3.5 IC (A) (1) hFE Transition frequency as a function of collector current; typical values - 0.15 - 3.15 - 2.8 - 2.45 - 2.1 - 1.75 - 1.4 400 - 1.05 - 0.7 (2) - 0.10 - 0.35 200 (3) - 0.05 0 - 10- 1 -1 - 10 - 102 IC (mA) 0 - 103 VCE = -5 V 0 -1 -2 -3 -4 VCE (V) -5 Tamb = 25 °C (1) Tamb = 150 °C Fig. 11. PNP transistor: Collector current as a function of collector-emitter voltage; typical values (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 10. PNP transistor: DC current gain as a function of collector current; typical values BC847QAPN Product data sheet All information provided in this document is subject to legal disclaimers. 8 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 14 BC847QAPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor mle193 - 1200 VBE (mV) - 1200 VBEsat (mV) - 1000 - 1000 (1) - 800 mle195 (1) (2) - 800 (2) - 600 (3) - 400 - 200 - 10- 2 (3) - 600 - 10- 1 - 400 -1 - 10 - 200 - 10- 1 - 102 - 103 IC (mA) -1 VCE = -5 V IC/IB = 20 (1) Tamb = -55 °C (1) Tamb = -55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 150 °C (3) Tamb = 150 °C Fig. 12. PNP transistor: Base-emitter voltage as a function of collector current; typical values VCEsat (mV) IC (mA) - 103 Fig. 13. PNP transistor: Collector-emitter saturation voltage as a function of collector current; typical values mle194 - 104 - 102 - 10 006aab427 109 fT (Hz) - 103 108 - 102 (1) (2) (3) - 10 - 10- 1 -1 - 10 - 102 IC (mA) 107 - 10- 1 - 103 IC/IB = 20 Tamb = 25 °C; (1) Tamb = 150 °C VCE = -5 V; (2) Tamb = 25 °C f = 100 MHz (3) Tamb = -55 °C Fig. 14. PNP transistor: Collector-emitter saturation voltage as a function of collector current; typical values BC847QAPN Product data sheet -1 - 10 IC (mA) - 102 Fig. 15. PNP transistor: Transition frequency as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 8 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 14 BC847QAPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor 11. Test information 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 12. Package outline 0.35 0.35 0.15 0.23 1 2 0.125 0.205 0.22 0.30 0.95 1.05 6 0.04 max 3 0.34 0.40 Dimensions in mm 5 4 0.32 0.40 0.275 0.275 1.05 1.15 13-03-05 Fig. 16. Package outline DFN1010B-6 (SOT1216) BC847QAPN Product data sheet All information provided in this document is subject to legal disclaimers. 8 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 14 BC847QAPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor 13. Soldering Footprint information for reflow soldering of DFN1010B-6 package SOT1216 0.9 0.35 0.35 0.15 0.2 (6x) 0.15 1.3 1.2 0.35 0.25 0.5 0.6 0.35 0.25 1.1 0.3 (6x) 1 1.35 solder land solder land plus solder paste occupied area solder resist Dimensions in mm Issue date 13-03-06 14-07-28 sot1216_fr Fig. 17. Reflow soldering footprint for DFN1010B-6 (SOT1216) BC847QAPN Product data sheet All information provided in this document is subject to legal disclaimers. 8 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 14 BC847QAPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes BC847QAPN v.2 20150708 Product data sheet - BC847QAPN v.1 Modification: • BC847QAPN v.1 20130718 - - BC847QAPN Product data sheet Change of binary marking code position. Product data sheet All information provided in this document is subject to legal disclaimers. 8 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 11 / 14 BC847QAPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. 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BC847QAPN Product data sheet Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 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NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 8 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 12 / 14 BC847QAPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 5 11 11.1 Test information ..................................................... 9 Quality information ............................................... 9 12 Package outline ..................................................... 9 13 Soldering .............................................................. 10 14 Revision history ................................................... 11 15 15.1 15.2 15.3 15.4 Legal information .................................................12 Data sheet status ............................................... 12 Definitions ...........................................................12 Disclaimers .........................................................12 Trademarks ........................................................ 13 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 8 July 2015 BC847QAPN Product data sheet All information provided in this document is subject to legal disclaimers. 8 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 14 / 14