DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW BC857M series PNP general purpose transistors Product data sheet Supersedes data of 2003 Jul 15 2004 Mar 10 NXP Semiconductors Product data sheet PNP general purpose transistors BC857M series FEATURES QUICK REFERENCE DATA • Leadless ultra small plastic package (1 mm × 0.6 mm × 0.5 mm) SYMBOL • Board space 1.3 × 0.9 mm • Power dissipation comparable to SOT23. APPLICATIONS PARAMETER MAX. UNIT VCEO collector-emitter voltage −45 V IC collector current (DC) −100 mA ICM peak collector current −200 mA PINNING • General purpose small signal DC PIN • Low and medium frequency AC applications • Mobile communications, digital (still) cameras, PDAs, PCMCIA cards. DESCRIPTION 1 base 2 emitter 3 collector DESCRIPTION PNP general purpose transistor in a SOT883 leadless ultra small plastic package. NPN complement: BC847M series. 3 handbook, halfpage 2 1 3 MARKING 1 2 TYPE NUMBER Bottom view MARKING CODE BC857AM D1 BC857BM D2 BC857CM D3 MAM469 Fig.1 Simplified outline (SOT883) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BC857AM BC857BM − DESCRIPTION Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm BC857CM 2004 Mar 10 2 VERSION SOT883 NXP Semiconductors Product data sheet PNP general purpose transistors BC857M series LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −50 V VCEO collector-emitter voltage open base − −45 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) − −100 mA ICM peak collector current − −200 mA IBM peak base current − −100 mA Ptot total power dissipation note 1 − 250 mW note 2 − 430 mW Tamb ≤ 25 °C Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Notes 1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 μm copper strip line. 2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS VALUE UNIT note 1 500 K/W note 2 290 K/W in free air Notes 1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 μm copper strip line. 2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm2. 2004 Mar 10 3 NXP Semiconductors Product data sheet PNP general purpose transistors BC857M series CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS UNIT − −15 nA VCB = −30 V; IE = 0; Tj = 150 °C − −5 μA − −100 nA BC857AM 125 250 BC857BM 220 475 emitter-base cut-off current VEB = −5 V; IC = 0 hFE DC current gain VCE = −5 V; IC = −2 mA BC857CM VCEsat MAX. VCB = −30 V; IE = 0 collector-base cut-off current IEBO VBE MIN. base-emitter voltage collector-emitter saturation voltage 420 800 IC = −2 mA; VCE = −5 V −600 −750 mV IC = −10 mA; VCE = −5 V − −820 mV IC = −10 mA; IB = −0.5 mA − −200 mV IC = −100 mA; IB = −5 mA; note 1 − −400 mV Cc collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz − 2.5 pF fT transition frequency VCE = −5 V; IC = −10 mA; f = 100 MHz 100 − MHz F noise figure IC = −200 μA; VCE = −5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz − 10 dB Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2004 Mar 10 4 NXP Semiconductors Product data sheet PNP general purpose transistors BC857M series GRAPHICAL INFORMATION BC857AM MLE188 500 MLE189 −1200 handbook, halfpage handbook, halfpage VBE (mV) hFE −1000 400 (1) (1) −800 300 (2) (2) 200 −600 (3) 0 −10−2 (3) −400 100 −10−1 −1 −10 −200 −10−2 −102 −103 IC (mA) −10−1 −10 −1 −102 −103 IC (mA) VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.3 Fig.2 DC current gain; typical values. MLE190 −104 handbook, halfpage Base-emitter voltage as a function of collector current; typical values. MLE191 −1200 handbook, halfpage VBEsat (mV) VCEsat (mV) −1000 (1) −103 (2) −800 −102 (3) −600 (1) (2) (3) −10 −10−1 −1 −10 −400 −102 IC (mA) −200 −10−1 −103 IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.4 Fig.5 Collector-emitter saturation voltage as a function of collector current; typical values. 2004 Mar 10 5 −1 −10 −102 −103 IC (mA) Base-emitter saturation voltage as a function of collector current; typical values. NXP Semiconductors Product data sheet PNP general purpose transistors BC857M series GRAPHICAL INFORMATION BC857BM MLE192 1000 MLE193 −1200 handbook, halfpage handbook, halfpage hFE VBE (mV) −1000 800 (1) 600 −800 (1) (2) −600 400 (2) 200 0 −10−2 (3) −400 (3) −10−1 −1 −10 −200 −10−2 −102 −103 IC (mA) −10−1 −10 −1 −102 −103 IC (mA) VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.7 Fig.6 DC current gain; typical values. MLE194 −104 handbook, halfpage Base-emitter voltage as a function of collector current; typical values. MLE195 −1200 handbook, halfpage VBEsat (mV) VCEsat (mV) −1000 (1) −103 (2) −800 (3) −600 (1) −102 (2) −400 (3) −10 −10−1 −1 −10 −102 IC (mA) −200 −10−1 −103 IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.8 Fig.9 Collector-emitter saturation voltage as a function of collector current; typical values. 2004 Mar 10 6 −1 −10 −102 −103 IC (mA) Base-emitter saturation voltage as a function of collector current; typical values. NXP Semiconductors Product data sheet PNP general purpose transistors BC857M series GRAPHICAL INFORMATION BC857CM MLE196 1000 MLE197 −1200 VBE handbook, halfpage handbook, halfpage hFE (mV) (1) −1000 800 (1) −800 600 (2) (2) −600 400 (3) (3) −400 200 0 −10−2 −10−1 −1 −10 −200 −10−1 −102 −103 IC (mA) −1 −10 −102 −103 IC (mA) VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.11 Base-emitter voltage as a function of collector current; typical values. Fig.10 DC current gain; typical values. MLE198 −104 handbook, halfpage MLE199 −1200 handbook, halfpage VBEsat VCEsat (mV) (mV) −1000 (1) −103 (2) −800 (3) −600 (1) −102 (2) −400 (3) −10 −10−1 −1 −10 −102 IC (mA) −200 −10−1 −103 IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. −10 −102 −103 IC (mA) IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.12 Collector-emitter saturation voltage as a function of collector current; typical values. 2004 Mar 10 −1 Fig.13 Base-emitter saturation voltage as a function of collector current; typical values. 7 NXP Semiconductors Product data sheet PNP general purpose transistors BC857M series PACKAGE OUTLINE Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm L SOT883 L1 2 b 3 e b1 1 e1 A A1 E D 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A (1) A1 max. b b1 D E e e1 L L1 mm 0.50 0.46 0.03 0.20 0.12 0.55 0.47 0.62 0.55 1.02 0.95 0.35 0.65 0.30 0.22 0.30 0.22 Note 1. Including plating thickness OUTLINE VERSION SOT883 2004 Mar 10 REFERENCES IEC JEDEC JEITA SC-101 8 EUROPEAN PROJECTION ISSUE DATE 03-02-05 03-04-03 NXP Semiconductors Product data sheet PNP general purpose transistors BC857M series DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 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Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/02/pp10 Date of release: 2004 Mar 10 Document order number: 9397 750 12839