UNISONIC TECHNOLOGIES CO., LTD 7NM64 Preliminary Power MOSFET 5.0A, 640V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 7NM64 is an Super Junction MOSFET Structure. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. The UTC 7NM64 is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc. FEATURES * Low drain-source on-resistance: RDS(ON) < 0.95 Ω (max.) by using Super Junction Structure * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7NM64L-TN3-R 7NM64G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source 7NM64L-TN3-R Package TO-252 Pin Assignment 1 2 3 G D S Packing Tape Reel (1)Packing Type (1) R: Tape Reel (2)Package Type (2) TN3: TO-252 (3) Green Package (3) L: Lead Free, G: Halogen Free and Lead Free MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 6 QW-R209-131.a 7NM64 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 640 V Gate-Source Voltage VGSS ±25 V Avalanche Current (Note 2) IAR 2 A Continuous ID 5 A Drain Current 20 A Pulsed (Note 2) IDM Avalanche Energy Single Pulsed (Note 3) EAS 35 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 3.0 V/ns Power Dissipation PD 60 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 30mH, IAS = 1.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤5A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL Junction to Ambient θJA Junction to Case θJC Note: When mounted on 1 inch² FR-4, 2 Oz copper board. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS 110 2.08 UNIT °C/W °C/W 2 of 6 QW-R209-131.a 7NM64 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate- Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS VGS = 0V, ID = 250μA VDS = 640V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 2.5A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0 MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge QG VDS=50V, VGS=10V, ID=1.3A, Gate-Source Charge QGS ID=100µA (Note 1, 2) Gate-Drain Charge QGD Turn-On Delay Time tD(ON) VDS=30V, VGS=10V, ID=0.5A, Turn-On Rise Time tR RG=25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD IS=5.0A, VGS=0V Body Diode Reverse Recovery Time tRR IS=5.0A, VGS=0V dI/dt=100A/µs Body Diode Reverse Recovery Charge QRR MIN TYP MAX UNIT 640 1.0 1 100 -100 V μA nA nA 3.0 0.95 V Ω 250 180 20 pF pF pF 40 4.2 11.5 45 90 190 70 nC nC nC ns ns ns ns 470 4.6 5 A 20 A 1.4 V ns μC Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R209-131.a 7NM64 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R209-131.a 7NM64 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VGS RG VDD D.U.T. 10V Pulse Width≤ 1μs Duty Factor≤0.1% Switching Test Circuit 12V 0.2µF 50kΩ 0.3µF Switching Waveforms Same Type as D.U.T. VDS VGS DUT 3mA Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R209-131.a 7NM64 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R209-131.a