CED05N8/CEU05N8 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 800V, 3.4A, RDS(ON) = 2.9 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. G D G S CEU SERIES TO-252(D-PAK) ABSOLUTE MAXIMUM RATINGS Parameter G D S CED SERIES TO-251(I-PAK) Tc = 25 C unless otherwise noted Symbol Limit 800 Units V VGS ±30 V ID 3.4 A IDM 13.6 A 83 W 0.7 W/ C Drain-Source Voltage VDS Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed S a Maximum Power Dissipation @ TC = 25 C PD - Derate above 25 C Single Pulsed Avalanche Energy d EAS 331 mJ Single Pulsed Avalanche Current d IAS 4.7 A TJ,Tstg -55 to 150 C Symbol Limit Units Thermal Resistance, Junction-to-Case RθJC 1.5 C/W Thermal Resistance, Junction-to-Ambient RθJA 50 C/W Operating and Store Temperature Range Thermal Characteristics Parameter This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2013.Aug http://www.cetsemi.com CED05N8/CEU05N8 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 800 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 800V, VGS = 0V 1 µA IGSSF VGS = 30V, VDS = 0V 100 nA IGSSR VGS = -30V, VDS = 0V -100 nA 4 V 2.9 Ω Off Characteristics V On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) VGS = VDS, ID = 250µA RDS(on) VGS = 10V, ID = 1.7A Dynamic Characteristics c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0 MHz 2 2.4 1285 pF 105 pF 15 pF 29 ns 71 ns 63 ns Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 400V, ID = 4.8A, VGS = 10V, RGEN = 25Ω Turn-Off Fall Time tf 24 ns Total Gate Charge Qg 25 nC Gate-Source Charge Qgs 6 nC Gate-Drain Charge Qgd 9 nC VDS = 640V, ID = 4.8A, VGS = 10V Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 3.4A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.L = 30mH, IAS =4.7A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C 2 3.4 A 1.2 V CED05N8/CEU05N8 7.8 VGS=10,9,8,6V 4.0 ID, Drain Current (A) ID, Drain Current (A) 4.8 3.2 2.4 1.6 VGS=5V 0.8 0 0 3 6 9 12 15 25 C 18 0 2 -55 C 4 6 8 10 Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) Ciss 840 560 Coss 280 Crss 0 5 10 15 20 25 3.0 2.5 ID=1.7A VGS=10V 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ=125C VGS, Gate-to-Source Voltage (V) IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 2.6 0 1120 1.2 3.9 VDS, Drain-to-Source Voltage (V) 1400 1.3 5.2 1.3 1680 0 6.5 -25 0 25 50 75 100 125 150 10 1 10 0 10 -1 VGS=0V 0.4 0.6 0.8 1.0 1.2 1.4 1.6 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 VDS=640V ID=4.8A 10 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CED05N8/CEU05N8 6 4 2 0 0 7 14 21 RDS(ON)Limit 100ms 10 0 10 -1 10 28 1 1ms 10ms DC TC=25 C TJ=150 C Single Pulse -2 10 0 10 1 10 2 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 PDM 0.1 -1 t1 0.05 0.02 0.01 Single Pulse 10 -2 10 -5 t2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 0 10 1 3