SSRF02N80SL

SSRF02N80SL
2A , 800V , RDS(ON) 6.1Ω
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
ITO-220
DESCRIPTION
The SSRF02N80SL is the highest performance trench
N-ch MOSFETs with extreme high cell density , which provide
excellent RDS(on) and gate charge for most of the synchronous
buck converter applications .
B
M
A
H
J
C
L
K
L
FEATURES
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
2
N
D
E
G
F
Drain
REF.
1
Gate
3
Source
A
B
C
D
E
F
G
Millimeter
Min.
Max.
14.60
16.50
9.50
10.50
12.60
14.00
4.30
5.10
2.30
3.2
2.30
3.10
0.30
0.75
REF.
H
J
K
L
M
N
Millimeter
Min.
Max.
2.70
4.00
0.90
1.50
0.50
0.95
2.34
2.74
2.40
3.60
φ 3.0
φ 3.4
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
800
V
Gate-Source Voltage
VGS
±30
V
2
A
1.2
A
8
A
TC=25°C
Continuous Drain Current
TC=100°C
Pulsed Drain Current
ID
IDM
TC=25°C
Total Power Dissipation
PD
Derate above 25°C
Single Pulse Avalanche Energy
1
Operating Junction and Storage Temperature Range
33
W
0.26
EAS
180
mJ
TJ, TSTG
-55~150
°C
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient
RθJA
120
°C / W
Maximum Thermal Resistance Junction-Case
RθJC
3.79
°C / W
Notes:
1. L=30mH,IAS=3.3A, VDD=100V, RG=25Ω, Starting TJ =25°C
http://www.SeCoSGmbH.com/
03-Dec-2013 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 5
SSRF02N80SL
2A , 800V , RDS(ON) 6.1Ω
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
BVDSS
800
-
-
V
VGS=0, ID= 250µA
Gate-Threshold Voltage
VGS(th)
2
-
4
V
VDS=VGS, ID=250µA
Gate-Source Leakage Current
IGSS
-
-
±100
nA
VGS= ±30V, VDS=0
Drain-Source Leakage Current
IDSS
-
-
1
µA
VDS=800V, VGS=0
RDS(ON)
-
4.4
6.1
Ω
VGS=10V, ID=1A
Qg
-
9.65
-
Qgs
-
2.32
-
nC
ID=2A
VDS=640V
VGS=10V
nS
VDD=400V
ID=2A
RG=25 Ω
pF
VGS =0
VDS=25V
f =1.0MHz
Static Drain-Source On-Resistance
Total Gate Charge
1.2
Gate-Source Charge
1.2
Gate-Drain Change
1.2
Qgd
-
4.57
-
Turn-on Delay Time
1.2
Td(on)
-
12.64
-
Tr
-
22.92
-
Rise Time
1.2
Turn-off Delay Time
1.2
Td(off)
-
25.92
-
Tf
-
26.64
-
Input Capacitance
Ciss
-
383
-
Output Capacitance
Coss
-
39
-
Reverse Transfer Capacitance
Crss
-
1.6
-
Fall Time
1.2
Source-Drain Diode
Diode Forward Voltage
VSD
-
-
1.4
V
IS=2A, VGS=0
Continuous Source Current
IS
-
-
2
A
Pulsed Source Current
ISM
-
-
8
A
Integral Reverse P-N
Junction Diode in the
MOSFET
Trr
-
360.5
-
ns
Qrr
-
1.17
-
µC
Reverse Recovery Time
1.
Reverse Recovery Charge
1.
IS=2A,VGS=0,
dlF/dt=100A/µS
Notes:
1. Pulse Test: Pulse width ≦300µS, Duty cycle≦2%
2. Essentially independent of operating temperature.
http://www.SeCoSGmbH.com/
03-Dec-2013 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 5
SSRF02N80SL
Elektronische Bauelemente
2A , 800V , RDS(ON) 6.1Ω
N-Ch Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
03-Dec-2013 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 5
SSRF02N80SL
Elektronische Bauelemente
2A , 800V , RDS(ON) 6.1Ω
N-Ch Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
03-Dec-2013 Rev. A
Any changes of specification will not be informed individually.
Page 4 of 5
SSRF02N80SL
Elektronische Bauelemente
2A , 800V , RDS(ON) 6.1Ω
N-Ch Enhancement Mode Power MOSFET
TYPICAL TEST CURVES
http://www.SeCoSGmbH.com/
03-Dec-2013 Rev. A
Any changes of specification will not be informed individually.
Page 5 of 5