SSRF02N80SL 2A , 800V , RDS(ON) 6.1Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free ITO-220 DESCRIPTION The SSRF02N80SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . B M A H J C L K L FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 2 N D E G F Drain REF. 1 Gate 3 Source A B C D E F G Millimeter Min. Max. 14.60 16.50 9.50 10.50 12.60 14.00 4.30 5.10 2.30 3.2 2.30 3.10 0.30 0.75 REF. H J K L M N Millimeter Min. Max. 2.70 4.00 0.90 1.50 0.50 0.95 2.34 2.74 2.40 3.60 φ 3.0 φ 3.4 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 800 V Gate-Source Voltage VGS ±30 V 2 A 1.2 A 8 A TC=25°C Continuous Drain Current TC=100°C Pulsed Drain Current ID IDM TC=25°C Total Power Dissipation PD Derate above 25°C Single Pulse Avalanche Energy 1 Operating Junction and Storage Temperature Range 33 W 0.26 EAS 180 mJ TJ, TSTG -55~150 °C Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient RθJA 120 °C / W Maximum Thermal Resistance Junction-Case RθJC 3.79 °C / W Notes: 1. L=30mH,IAS=3.3A, VDD=100V, RG=25Ω, Starting TJ =25°C http://www.SeCoSGmbH.com/ 03-Dec-2013 Rev. A Any changes of specification will not be informed individually. Page 1 of 5 SSRF02N80SL 2A , 800V , RDS(ON) 6.1Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BVDSS 800 - - V VGS=0, ID= 250µA Gate-Threshold Voltage VGS(th) 2 - 4 V VDS=VGS, ID=250µA Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±30V, VDS=0 Drain-Source Leakage Current IDSS - - 1 µA VDS=800V, VGS=0 RDS(ON) - 4.4 6.1 Ω VGS=10V, ID=1A Qg - 9.65 - Qgs - 2.32 - nC ID=2A VDS=640V VGS=10V nS VDD=400V ID=2A RG=25 Ω pF VGS =0 VDS=25V f =1.0MHz Static Drain-Source On-Resistance Total Gate Charge 1.2 Gate-Source Charge 1.2 Gate-Drain Change 1.2 Qgd - 4.57 - Turn-on Delay Time 1.2 Td(on) - 12.64 - Tr - 22.92 - Rise Time 1.2 Turn-off Delay Time 1.2 Td(off) - 25.92 - Tf - 26.64 - Input Capacitance Ciss - 383 - Output Capacitance Coss - 39 - Reverse Transfer Capacitance Crss - 1.6 - Fall Time 1.2 Source-Drain Diode Diode Forward Voltage VSD - - 1.4 V IS=2A, VGS=0 Continuous Source Current IS - - 2 A Pulsed Source Current ISM - - 8 A Integral Reverse P-N Junction Diode in the MOSFET Trr - 360.5 - ns Qrr - 1.17 - µC Reverse Recovery Time 1. Reverse Recovery Charge 1. IS=2A,VGS=0, dlF/dt=100A/µS Notes: 1. Pulse Test: Pulse width ≦300µS, Duty cycle≦2% 2. Essentially independent of operating temperature. http://www.SeCoSGmbH.com/ 03-Dec-2013 Rev. A Any changes of specification will not be informed individually. Page 2 of 5 SSRF02N80SL Elektronische Bauelemente 2A , 800V , RDS(ON) 6.1Ω N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 03-Dec-2013 Rev. A Any changes of specification will not be informed individually. Page 3 of 5 SSRF02N80SL Elektronische Bauelemente 2A , 800V , RDS(ON) 6.1Ω N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 03-Dec-2013 Rev. A Any changes of specification will not be informed individually. Page 4 of 5 SSRF02N80SL Elektronische Bauelemente 2A , 800V , RDS(ON) 6.1Ω N-Ch Enhancement Mode Power MOSFET TYPICAL TEST CURVES http://www.SeCoSGmbH.com/ 03-Dec-2013 Rev. A Any changes of specification will not be informed individually. Page 5 of 5