UNISONIC TECHNOLOGIES CO., LTD Preliminary 6NM65-SH Power MOSFET 6.0A, 650V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 6NM65-SH is an Super Junction MOSFET Structure. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. The UTC 6NM65-SH is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc. FEATURES * RDS(on) < 1.1 Ω @ VGS=10V, ID=3A * Improved dv/dt capability * Fast switching * 100% avalanche tested SYMBOL ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 6NM65L-TA3-T 6NM65G-TA3-T 6NM65L-TF1-T 6NM65G-TF1-T 6NM65L-TF2-T 6NM65G-TF2-T 6NM65L-TF3-T 6NM65G-TF3-T 6NM65L-TM3-R 6NM65G-TM3-R 6NM65L-TN3-R 6NM65G-TN3-R Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd Package TO-220 TO-220F1 TO-220F2 TO-220F TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tape Reel Tape Reel 1 of 7 QW-R209-113.a 6NM65-SH Preliminary Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R209-113.a 6NM65-SH Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current ID 6 A Pulsed Drain Current (Note 2) IDM 52 A Avalanche Current (Note 2) IAR 13 A Single Pulsed Avalanche Energy (Note 3) EAS 100 mJ Repetitive Avalanche Energy (Note 2) EAR 17 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.3 V/ns TO-220 125 W TO-220F/TO-220F1 Power Dissipation PD 40 W TO-220F2 TO-251/TO-252 60 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ. 3. L = 150mH, IAS = 1.2A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 6A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER TO-220/TO-220F TO-220F1/TO-220F2 Junction to Ambient TO-251/TO-252 TO-220 TO-220F/TO-220F1 Junction to Case TO-220F2 TO-251/TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATING UNIT 62.5 °C/W 110 1.0 °C/W °C/W 3.2 °C/W 2.6 °C/W 3 of 7 QW-R209-113.a 6NM65-SH Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS MIN TYP MAX UNIT BVDSS IDSS VGS = 0V, ID = 250μA 650 VDS = 650V, VGS = 0V VGS = 30V, VDS = 0V Gate-Source Leakage Current IGSS VGS = -30V, VDS = 0V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250mA,Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.5 Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 3A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge QG VDS= 50V, VGS= 10 V ID= 1.3A, IG = 100 μA Gate-Source Charge QGS (Note 1, 2) Gate-Drain Charge QGD Turn-On Delay Time tD(ON) VDD = 30V, VGS= 10 V, Turn-On Rise Time tR ID = 0.5A, RG = 25Ω Turn-Off Delay Time tD(OFF) (Note 1, 2) Turn-Off Fall Time tF DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 6 A Reverse Recovery Time trr VGS = 0V, IS = 6A, dIF / dt =100A/μs (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating ambient temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0.5 V 10 μA 100 nA -100 nA V/°C 4.5 1.1 V Ω 212 137 20 pF pF pF 43 4.2 7.4 30 46 124 38 nC nC nC nS nS nS nS 295 2.5 6 A 52 A 1.4 V nS μC 4 of 7 QW-R209-113.a 6NM65-SH Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period Peak Diode Recovery dv/dt Test Circuit & Waveforms VGS (Driver ) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R209-113.a 6NM65-SH Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Gate Charge Test Circuit Gate Charge Waveforms Resistive Switching Test Circuit Resistive Switching Waveforms 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R209-113.a 6NM65-SH Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R209-113.a