UNISONIC TECHNOLOGIES CO., LTD Preliminary UT3400-H Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT3400-H is an N-ch enhancement MOSFET providing the customers with perfect RDS(ON) and low gate charge. This device can be operated with 2.5V low gate voltage. The UTC UT3400-H is optimized for applications, such as a load switch or in PWM. FEATURES * VDS (V)=30V * ID=5.8 A * RDS(ON) < 32mΩ @ VGS =10V, ID =5.8A RDS(ON) < 35mΩ @ VGS=4.5V, ID =5A RDS(ON) < 52mΩ @ VGS=2.5V, ID =4A SYMBOL ORDERING INFORMATION Ordering Number UT3400G-AE3-R Note: Pin Assignment: G: Gate D: Drain Package SOT-23 Pin Assignment 1 2 3 S G D Packing Tape Reel S: Source MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R205-071.a UT3400-H Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID 5.3 A Pulsed Drain Current (Note 2) IDM 21.2 A Power Dissipation PD 1.56 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. Pulse width ≤300μs, duty cycle≤0.5% 4. L = 50mH, IAS = 2A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 5. ISD ≤ 7A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL Junction to Ambient (Note) θJA Note: Surface mounted on 1 in2 copper pad of FR4 board with 2oz RATINGS 80 UNIT °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage On-State Drain Current Drain to Source On-state Resistance SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS =0V, ID =250µA VDS =24V,VGS =0V VGS =±12V, VDS =0V 30 VGS(TH) ID(ON) VDS =VGS, ID =250µA VDS =5V, VGS =4.5V VGS =10V, ID =5.8A VGS =4.5V, ID =5A VGS =2.5V, ID =4 A 0.4 30 RDS(ON) DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VDS =15V, VGS =0V, f =1MHz Reverse Transfer Capacitance CRSS Gate Resistance RG VGS =0V, VDS =0V, f =1MHz SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) VGS =4.5V,VDS =10V, ID=1A Turn-ON Rise Time tR Turn-OFF Delay Time tD(OFF) RG =25Ω Turn-OFF Fall-Time tF Total Gate Charge QG VGS =4.5V, VDS =10V, ID =4A Gate Source Charge QGS Gate Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=1A, VGS =0V Diode Continuous Forward Current ( Note 1) IS Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300μs, duty cycle≤0.5% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1 100 V µA nA 0.75 0.9 28 30 36 32 35 52 V A mΩ mΩ mΩ 695 45 36 1.5 3.0 pF pF pF Ω 4.5 13 27 8.3 8.4 1 2.2 9 25 51 16 12 2 4 ns ns ns ns nC nC nC 1 5.3 V A 2 of 4 QW-R205-071.a UT3400-H Preliminary Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage 300 300 250 Drain Current, ID (µA) 250 Drain Current, ID (µA) Drain Current vs. Gate Threshold Voltage 200 150 100 200 150 100 50 50 0 0 10 20 30 40 0 50 0 Drain-Source On-State Resistance Characteristics VGS=4.5V ID=5A 5 4 VGS=2.5V ID=4A 3 2 1 0 Drain Current vs. Source to Drain Voltage 0.8 Drain Current, ID (A) Drain Current, ID (A) 1.0 VGS=10V ID=5.8A 6 1.5 1.0 Gate Threshold Voltage, VTH (V) Drain-Source Breakdown Voltage, BVDSS(V) 7 0.5 0.6 0.4 0.2 0 0 50 100 250 150 200 Drain to Source Voltage, VDS (mV) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0 0.2 0.4 0.6 0.8 Source to Drain Voltage, VSD (V) 3 of 4 QW-R205-071.a UT3400-H Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R205-071.a