UNITPOWER US3400

US3400
N-Ch 30V Fast Switching MOSFETs
General Description
Product Summery
The US3400 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
The US3400 meet the RoHS and Green Product
requirement with full function reliability approved.
BVDSS
RDS(ON)
30V
52mΩ
ID
5.8A
Applications
z High Frequency Point-of-Load Synchronous s
Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
Features
z Advanced high cell density Trench technology
SOT23 Pin Configuration
z Super Low Gate Charge
D
z Excellent Cdv/dt effect decline
z Green Device Available
G
D
S
G
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
Continuous Drain
TA=25°C
A
Current
TA=70°C
Pulsed Drain Current B
VGS
Power Dissipation
Units
V
±12
V
5.8
30
1.4
PD
TA=70°C
Junction and Storage Temperature Range
A
4.9
ID
IDM
TA=25°C
A
Maximum
30
W
1
TJ, TSTG
°C
-55 to 150
Thermal Data
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
C
Maximum Junction-to-Lead
Symbol
A
A
t 10s
Steady-State
Steady-State
R
JA
R
JL
Typ
65
85
43
1
Max
90
125
60
Units
°C/W
°C/W
°C/W
US3400
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Min
Conditions
ID=250 A, VGS=0V
1
TJ=55°C
5
Gate-Body leakage current
VDS=0V, VGS=±12V
Gate Threshold Voltage
VDS=VGS ID=250 A
0.6
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
30
100
VGS=10V, ID=5.8A
VGS=4.5V, ID=5A
27.3
33
m
VGS=2.5V, ID=4A
43.3
52
m
VDS=5V, ID=5A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
V
A
39
IS=1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Crss
nA
28
Forward Transconductance
Output Capacitance
1.1
32
gFS
Coss
---
A
22.8
TJ=125°C
VSD
IS
Units
V
VDS=24V, VGS=0V
VGS(th)
Static Drain-Source On-Resistance
Max
30
IGSS
RDS(ON)
Typ
10
15
0.71
823
S
1
V
2.5
A
1030
pF
VGS=0V, VDS=15V, f=1MHz
99
VGS=0V, VDS=0V, f=1MHz
1.2
3.6
9.7
12
pF
77
VGS=4.5V, VDS=15V, ID=5.8A
VGS=10V, VDS=15V, RL=2.7 ,
RGEN=3
pF
nC
1.6
nC
3.1
nC
3.3
5
ns
4.8
7
ns
26.3
40
ns
4.1
6
ns
ns
nC
trr
Body Diode Reverse Recovery Time
IF=5A, dI/dt=100A/ s
16
20
Qrr
Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/ s
8.9
12
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
2
m
US3400
N-Ch 30V Fast Switching MOSFETs
Typical Characteristics
20
25
10V
3V
VDS=5V
16
20
4.5V
2.5V
12
ID(A)
ID (A)
15
8
10
125°C
VGS=2V
5
0
0
0
1
2
3
4
VDS (Volts)
Fig 1: On-Region Characteristics
5
0
60
Normalized On-Resistance
RDS(ON) (m )
0.5
1
1.5
2
2.5
VGS(Volts)
Figure 2: Transfer Characteristics
3
1.8
50
VGS=2.5V
40
30
VGS=4.5V
20
VGS=10V
10
1.6
VGS=4.5V
1.4
VGS=10V
1.2
VGS=2.5V
1
0.8
0
5
10
15
0
20
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
70
1.0E+01
60
1.0E+00
ID=5A
1.0E-01
50
125°C
IS (A)
RDS(ON) (m )
25°C
4
40
30
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
25°C
20
1.0E-05
1.0E-06
10
0
2
4
6
8
0.0
10
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
3
1.2
US3400
N-Ch 30V Fast Switching MOSFETs
Typical Characteristics
1400
5
VDS=15V
ID=5A
1200
1000
Capacitance (pF)
VGS (Volts)
4
3
2
Ciss
800
600
400
Coss
1
Crss
200
0
0
2
4
6
8
10
0
12
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
25
30
TJ(Max)=150°C
TA=25°C
30
Power (W)
100 s
1ms
10ms
1.0
1s
20
10
10s
DC
0
0.001
0.1
0.1
1
10
100
JA Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TA+PDM.Z
R JA=90°C/W
JA.R JA
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Z
ID (Amps)
15
40
TJ(Max)=150°C
TA=25°C
0.1s
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
RDS(ON)
10.0 limited
5
0.01
0.00001
T
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4
100
1000