AO6405 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO6405 is Pb-free (meets ROHS & Sony 259 specifications). AO6405L is a Green Product ordering option. AO6405 and AO6405L are electrically identical. VDS (V) = -30V ID = -5 A (VGS = -10V) RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.5V) D TSOP6 Top View D D G 1 6 2 5 3 4 D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±20 V -20 2 W 1.4 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A -4.2 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V -5 TA=25°C Power Dissipation A Maximum -30 RθJA RθJL Typ 47.5 74 37 Max 62.5 110 50 Units °C/W °C/W °C/W AO6405 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -20 TJ=55°C -5 ±100 VGS=-10V, ID=5.0A Static Drain-Source On-Resistance gFS Forward Transconductance VSD IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C VGS=-4.5V, ID=-4A VDS=-5V, ID=-5A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg (10V) Total Gate Charge (10V) Qg (4.5V) Total Gate Charge (4.5V) Qgs Gate Source Charge Units -1 Zero Gate Voltage Drain Current RDS(ON) Max V VDS=-24V, VGS=0V IDSS IS Typ 6 -1.8 -3 39 52 54 70 VGS=-10V, VDS=-15V, ID=-5A V 67 87 mΩ mΩ 8.6 -0.77 S -1 V -2.8 A 840 pF 120 pF 75 VGS=0V, VDS=0V, f=1MHz nA A 700 VGS=0V, VDS=-15V, f=1MHz µA pF 15 Ω 14.7 18 nC 7.6 9.5 10 nC 2 nC Qgd Gate Drain Charge 3.8 nC tD(on) Turn-On DelayTime 8.3 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-5A, dI/dt=100A/µs 23.5 Qrr Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs 13.4 VGS=-10V, VDS=-15V, RL=3Ω, RGEN=3Ω 5 ns 29 ns 14 ns 30 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 3: May 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO6405 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 20 -10V -5V -6V -4.5V VDS=-5V 8 15 10 -ID(A) -ID (A) -4V -3.5V VGS=-3V 5 0 0.00 2.00 3.00 4.00 4 125°C 2 -2.5V 1.00 6 25°C 0 5.00 0 1 100 Normalized On-Resistance RDS(ON) (mΩ) 3 4 1.60E+00 80 VGS=-4.5V 60 VGS=-10V 40 20 1 3 5 7 VGS=-4.5V 1.40E+00 VGS=-10V 1.20E+00 ID=-5A 1.00E+00 8.00E-01 9 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 160 140 1E+00 ID=-5A 120 1E-01 100 1E-02 -IS (A) RDS(ON) (mΩ) 2 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Figure 1: On-Region Characteristics 125°C 80 125°C 1E-03 25°C 1E-04 60 1E-05 25°C 40 1E-06 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 20 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO6405 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS=-15V ID=-5A 1000 Capacitance (pF) -VGS (Volts) 8 6 4 2 Ciss 800 600 400 Coss 200 0 Crss 0 0 2 4 6 8 10 12 14 16 0 5 -Qg (nC) Figure 7: Gate-Charge Characteristics TJ(Max)=150°C TA=25°C 40 25 30 30 100µs 1ms 0.1s 20 TJ(Max)=150°C TA=25°C 10µs RDS(ON) limited 10 15 -VDS (Volts) Figure 8: Capacitance Characteristics Power (W) -ID (Amps) 100 10 10ms 1 20 10 1s 10s DC 0 0.001 0.1 0.1 1 10 100 -VDS (Volts) ZθJA Normalized Transient Thermal Resistance D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000