AOSMD AO6405

AO6405
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO6405 uses advanced trench technology to
provide excellent RDS(ON) with low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO6405 is Pb-free
(meets ROHS & Sony 259 specifications). AO6405L
is a Green Product ordering option. AO6405 and
AO6405L are electrically identical.
VDS (V) = -30V
ID = -5 A (VGS = -10V)
RDS(ON) < 52mΩ (VGS = -10V)
RDS(ON) < 87mΩ (VGS = -4.5V)
D
TSOP6
Top View
D
D
G
1 6
2 5
3 4
D
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current A
Pulsed Drain Current
ID
IDM
TA=70°C
B
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
±20
V
-20
2
W
1.4
TJ, TSTG
°C
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
A
-4.2
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Units
V
-5
TA=25°C
Power Dissipation A
Maximum
-30
RθJA
RθJL
Typ
47.5
74
37
Max
62.5
110
50
Units
°C/W
°C/W
°C/W
AO6405
Electrical Characteristics (T J=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-30
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-20
TJ=55°C
-5
±100
VGS=-10V, ID=5.0A
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
IS=-1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
TJ=125°C
VGS=-4.5V, ID=-4A
VDS=-5V, ID=-5A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge (10V)
Qg (4.5V) Total Gate Charge (4.5V)
Qgs
Gate Source Charge
Units
-1
Zero Gate Voltage Drain Current
RDS(ON)
Max
V
VDS=-24V, VGS=0V
IDSS
IS
Typ
6
-1.8
-3
39
52
54
70
VGS=-10V, VDS=-15V, ID=-5A
V
67
87
mΩ
mΩ
8.6
-0.77
S
-1
V
-2.8
A
840
pF
120
pF
75
VGS=0V, VDS=0V, f=1MHz
nA
A
700
VGS=0V, VDS=-15V, f=1MHz
µA
pF
15
Ω
14.7
18
nC
7.6
9.5
10
nC
2
nC
Qgd
Gate Drain Charge
3.8
nC
tD(on)
Turn-On DelayTime
8.3
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=-5A, dI/dt=100A/µs
23.5
Qrr
Body Diode Reverse Recovery Charge
IF=-5A, dI/dt=100A/µs
13.4
VGS=-10V, VDS=-15V, RL=3Ω,
RGEN=3Ω
5
ns
29
ns
14
ns
30
ns
nC
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 3: May 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO6405
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
20
-10V
-5V
-6V
-4.5V
VDS=-5V
8
15
10
-ID(A)
-ID (A)
-4V
-3.5V
VGS=-3V
5
0
0.00
2.00
3.00
4.00
4
125°C
2
-2.5V
1.00
6
25°C
0
5.00
0
1
100
Normalized On-Resistance
RDS(ON) (mΩ)
3
4
1.60E+00
80
VGS=-4.5V
60
VGS=-10V
40
20
1
3
5
7
VGS=-4.5V
1.40E+00
VGS=-10V
1.20E+00
ID=-5A
1.00E+00
8.00E-01
9
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1E+01
160
140
1E+00
ID=-5A
120
1E-01
100
1E-02
-IS (A)
RDS(ON) (mΩ)
2
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Figure 1: On-Region Characteristics
125°C
80
125°C
1E-03
25°C
1E-04
60
1E-05
25°C
40
1E-06
FUNCTIONS
AND RELIABILITY WITHOUT NOTICE.
20
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AO6405
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
10
VDS=-15V
ID=-5A
1000
Capacitance (pF)
-VGS (Volts)
8
6
4
2
Ciss
800
600
400
Coss
200
0
Crss
0
0
2
4
6
8
10
12
14
16
0
5
-Qg (nC)
Figure 7: Gate-Charge Characteristics
TJ(Max)=150°C
TA=25°C
40
25
30
30
100µs
1ms
0.1s
20
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
limited
10
15
-VDS (Volts)
Figure 8: Capacitance Characteristics
Power (W)
-ID (Amps)
100
10
10ms
1
20
10
1s
10s
DC
0
0.001
0.1
0.1
1
10
100
-VDS (Volts)
ZθJA Normalized Transient
Thermal Resistance
D=T on/T
TJ,PK=T A+PDM.ZθJA.RθJA
RθJA=62.5°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
FUNCTIONS AND RELIABILITY WITHOUT
NOTICE.
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000