Analog Power AM4500C N & P-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY rDS(on) (mΩ) VDS (V) 255 @ VGS = 10V 150 290 @ VGS = 4.5V 500 @ VGS = -10V -150 530 @ VGS = -4.5V Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits SO-8 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Nch Limit Pch Limit VDS Drain-Source Voltage 150 -150 VGS Gate-Source Voltage ±20 ±20 TA=25°C 2.3 -1.7 ID Continuous Drain Current a TA=70°C 1.8 -1.3 b IDM Pulsed Drain Current 9 -7 a I 2.5 -2.3 Continuous Source Current (Diode Conduction) S T =25°C 2.1 2.1 A PD Power Dissipation a TA=70°C 1.3 1.3 TJ, Tstg Operating Junction and Storage Temperature Range -55 to 150 Maximum Junction-to-Ambient a ID (A) 2.3 2.2 -1.7 -1.6 THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum 62.5 RθJA 110 Units V A A W °C Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM4500C_1A Analog Power AM4500C Electrical Characteristics Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage a Symbol Test Conditions Static VDS = VGS, ID = 250 uA VGS(th) VDS = VGS, ID = -250 uA IGSS VDS = 0 V, VGS = ±20 V VDS = 120 V, VGS = 0 V IDSS VDS = -120 V, VGS = 0 V VDS = 5 V, VGS = 10 V ID(on) VDS = -5 V, VGS = -10 V VGS = 10 V, ID = 2.1 A VGS = 4.5 V, ID = 1.7 A rDS(on) VGS = -10 V, ID = -1.4 A VGS = -4.5 V, ID = -1 A VDS = 15 V, ID = 2.1 A gfs VDS = -15 V, ID = -1.4 A IS = 1.3 A, VGS = 0 V VSD IS = 1.2 A, VGS = 0 V Min (Nch) (Pch) (Nch) (Pch) (Nch) (Pch) (Nch) (Nch) (Pch) (Pch) (Nch) (Pch) (Nch) (Pch) Typ Max 1 -1 ±100 1 -1 3.5 -2.5 Unit V V nA uA A A 255 290 500 530 11 11 0.76 0.75 mΩ mΩ S S V V Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance © Preliminary Qg Qgs Qgd Qg Qgs Qgd td(on) tr td(off) tf td(on) tr td(off) tf Ciss Coss Crss Ciss Coss Crss N - Channel VDS = 75 V, VGS = 4.5 V, ID = 2.1 A P - Channel VDS = -75 V, VGS = -4.5 V, ID = -1.4 A N - Channel VDD = 75 V, RL = 35.7 Ω, ID = 2.1 A, VGEN = 10 V, RGEN = 6 Ω P - Channel VDD = -75 V, RL = 53.6 Ω, ID = -1.4 A, VGEN = -10 V, RGEN = 6 Ω N - Channel VDS = 15 V, VGS = 0 V, f = 1 MHz P - Channel VDS = -15 V, VGS = 0 V, f = 1 MHz 2 10 4.0 4.7 6 2.0 2.9 7 7 47 20 8 7 96 79 1016 83 40 1008 100 61 nC nC ns ns pF pF Publication Order Number: DS_AM4500C_1A