MOSFET SMD Type Dual N-Channel High Density Trench MOSFET KI8205T Unit: mm Features Super high dense cell trench design for low RDS(on). Rugged and reliable. Surface Mount package. 1 pin mark D1 D2 G1 S1 1 6 G1 D1/D2 2 5 D1/D2 S2 3 4 G2 G2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS Drain Current-Continuous @ TA = 25 *1 -Pulse *2 Drain-Source Diode Forward Current *1 Maximum Power Dissipation TA=25 *1 V ID 4.3 A IDM 21.5 A IS 1.7 A PD 1.25 W 0.75 TA=75 Operating Junction and Storage Temperature Range Thermal Resistance,Junction-to-Ambient *1 Surface Mounted on FR4 Board , t 12 TJ,TSTG - 55 to 150 RthJA 100 /W 10sec . *2 Pulse width limited by maximum junction temperature. www.kexin.com.cn 1 MOSFET SMD Type Dual N-Channel High Density Trench MOSFET KI8205T Electrical Characteristics Ta = 25 Parameter Symbol Drain-Source Breakdown Voltage Testconditons Min Typ Max 20 V VDSS VGS = 0V , ID = 250 Zero Gate Voltage Drain Current IDSS VGS = 20V , VDS = 0V 1 Gate-Body Leakage IGSS VDS = 100 Gate Threshold Voltage *1 VGS(th) Drain-Source On-State Resistance *1 RDS(on) Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Turn-On Delay Time td(on) Turn-Off Delay Time tr Rise Time td(off) Fall Time tf Total Gate Charge Qgs Gate-Drain Charge Qgd Diode Forward Voltage VSD 300 12V , VGS = 0V VDS = VGS , ID = 250uA 0.9 1.5 VGS = 4V , ID = 4.3A 25 30 VGS = 2.5V , ID = 3.4A 34 46 s , Duty Cycle 0.6 A nA V m 550 VDS = 8V , VGS = 0V,f = 1.0MHz pF 164 138 VDD = 10V , ID = 1A 10 ns VGEN = 4.5V 8.2 ns RL = 10 25 ns RGEN = 6 6.7 ns 6.2 nC 1.8 nC 1.5 nC Qg Gate-Source Charge *1 Pulse width A Unit VDS = 10V , ID = 3A,VGS = 4.5V VGS = 0V , IS = 1.7A *1 1.2 V 2% . www.kexin.com.cn 2