KEXIN KI2304DS

Transistors
SMD Type
N-Channel 30-V (D-S) MOSFET
KI2304DS
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
1
0.55
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
1.
Gate
2.Emitter
2.
Source
3.
Drain
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 ) *2 Ta = 25
ID
Pulsed Drain Current *1
Continuous Source Current (Diode Conduction)*2
Ta = 25
IDM
10
IS
1.25
PD
1.25
0.80
Ta=70
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambientb
TJ, Tstg
RthJA
Maximum Junction-to-Ambientc
V
2.5
2.0
Ta=70
Power Dissipation *2
20
Unit
A
W
-55 to 150
100
166
/W
*1 Pulse width limited by maximum junction temperature.
*2 Surface Mounted on FR4 Board, t
5 sec.
*3 Surface Mounted on FR4 Board.
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1
Transistors
SMD Type
KI2304DS
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current *
ID(on)
Drain-Source On-Resistance *
rDS(on)
VGS = 0 V, ID = 250
VDS = VGS, ID = 250
VDS = 0 V, VGS =
Min
A
30
A
1.5
Typ
Max
V
20 V
100
VDS = 30 V, VGS = 0 V
0.5
VDS = 30 V, VGS = 0 V, TJ = 55
10
VDS = 30 V, VGS = 1.0 V, TJ = 25
1
VDS
4.5 V, VGS = 10 V
6
VDS
4.5 V, VGS = 4.5 V
4
Unit
nA
A
A
VGS = 10 V, ID = 2.5 A
0.092 0.117
VGS = 4.5 V, ID = 2.0 A
0.142 0.190
Forward Transconductance *
gfs
VDS = 4.5 V, ID = 2.5 A
4.6
Diode Forward Voltage
VSD
IS = 1.25 A, VGS = 0 V
0.77
1.2
V
Gate Charge
Qg
VDS = 15 V, VGS = 5 V, ID = 2.5 A
2.4
4
nC
4.5
10
Total Gate Charge
Qgt
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=15V,VGS=10V,ID=2.5A
S
nC
0.8
1.0
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Delay Time
td(on)
8
20
tr
12
30
17
35
8
20
Rise Time
Turn-Off Delay Time
td(off)
Fall-Time
*Pulse test: PW
tf
300 ìs duty cycle 2%..
Marking
Marking
2
V(BR)DSS
Testconditons
A4
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240
VDS=15V,VGS=0V,f=1MHz
pF
110
17
VDD=15V,RL=15
,ID=1A,VGEN=10V,RG=6
ns