Transistors SMD Type N-Channel 1.25-W, 2.5-V MOSFET KI2302DS SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Drain-Source Voltage Parameter VDS 20 Gate-Source Voltage VGS 8 Continuous Drain Current (TJ = 150 ) *2 ID Pulsed Drain Current *1 IDM Continuous Source Current (Diode Conduction)*2 Power Dissipation *2 IS PD V 2.8 2.2 TA=70 Unit A 10 1.6 1.25 W 0.80 TA=70 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambientb TJ, Tstg RthJA Maximum Junction-to-Ambientc -55 to 150 100 166 /W *1 Pulse width limited by maximum junction temperature. *2 Surface Mounted on FR4 Board, t 5 sec. *3 Surface Mounted on FR4 Board. www.kexin.com.cn 1 Transistors Diodes SMD Type KI2302DS Electrical Characteristics Ta = 25 Parameter Symbol Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage On-State Drain Current * VGS(th) VDS = VGS, ID = 50 ìA 0.65 IDSS rDS(on) VDS = 0 V, VGS = Typ Max 8V 100 VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55 10 VDS 5 V, VGS = 4.5 V 6 VDS 5 V, VGS = 2.5 V 4 VGS = 4.5 V, ID = 3.6 A 0.07 VGS = 2.5 V, ID = 3.1 A 0.085 0.115 0.085 VDS = 5 V, ID = 3.6 A 10 Diode Forward Voltage VSD IS = 1.6 A, VGS = 0 V 0.76 1.2 5.4 10 VDS=10V,VGS=4.5V,ID=3.6A 0.65 Total Gate Charge Qg Qgs Gate-Drain Charge Qgd Ciss Reverse Transfer Capacitance Crss 33 Turn-On Delay Time td(on) 12 25 tr 36 60 34 60 10 25 *Pulse test: PW tf 300 ìs duty cycle 2%.. Marking Marking www.kexin.com.cn A2 V 1.60 Coss Fall-Time Ù nC Input Capacitance td(off) ìA S Output Capacitance Turn-Off Delay Time nA A gfs Gate-Source Charge Unit V Forward Transconductance * Rise Time 2 20 ID(on) Drain-Source On-Resistance * Min VGS = 0 V, ID = 10 ìA IGSS Zero Gate Voltage Drain Current Testconditons V(BR)DSS 340 VDS=10V,VGS=0V,f=1MHz VDD=10V,RL=5.5 Ù,ID=3.6A,VGEN=4.5V,RG=6Ù pF 115 ns